Absolute Maximum Ratings

Symbol VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate Conditions 1) RGE = 20 k Tcase = 25/80 C Tcase = 25/80 C; tp = 1 ms per IGBT, Tcase = 25 C AC, 1 min. DIN 40 040 DIN IEC 68 T.1

Values
Units 1700 1700 440 / 300 880 / 600 20 2500 40 . . .+150 (125) 4000 Class F 55/150/56 300 / 200 880 / 600 2900 42000 D1 S 400 / 270 880 / 600 4400 96000 V V A A V W C V

SEMITRANS M IGBT Modules SKM 400 GA 173 D SKM 400 GA 173 D1 S

Preliminary Data

8) Inverse Diode IF= IC Tcase = 25/80 C IFM= ICM Tcase = 25/80 C; tp = 1 ms tp = 10 ms; sin.; Tj = 150 C IFSM I2t tp = 10 ms; Tj = 150 C

A A A A2s

SEMITRANS 4

Characteristics
Symbol V(BR)CES VGE(th) ICES IGES VCEsat VCEsat gfs CCHC Cies Coes Cres LCE td(on) tr td(off) tf Eon Eoff Conditions 1) VGE = 0, IC = 5,6 mA VGE = VCE, IC = 20 mA Tj = 25 C VGE = 0 VCE = VCES Tj = 125 C VGE = 20 V, VCE = 0 V IC = 300 A VGE = 15 V; IC = 400 A Tj = 25 (125) C VCE = 20 V, IC = 300 A per IGBT min. typ. max. 6,2 2 4,5 400 3,9(5) 400 Units V V mA mA nA V V S pF nF nF nF nH ns ns ns ns mWs mWs V V V m A C V V V m A C C/W C/W C/W VCES 4,8 5,5 3,0(4,3) 3,8(5,5) 108 44 3,5 1 550 120 850 50 180 10

GA Features MOS input (voltage controlled) N channel, Homogeneous Si Low inductance case Very low tail current with low temperature dependence High short circuit capability, self limiting to 6 * Icnom Latch-up free Fast & soft inverse CAL diodes8) Isolated copper baseplate using DCB Direct Copper Bonding Large clearance (13 mm) and creepage distances (20 mm). Typical Applications: AC inverter drives on mains 575 - 750 VAC DC bus voltage 750 - 1200 VDC Public transport Switching (not for linear use) Tcase = 25 C, unless otherwise specified IF = IC, VR = 1200 V, diF/dt = 1500 A/s, VGE = 0 V 3) Use VGEoff = -5 ... -15 V 8) CAL = Controlled Axial Lifetime Technology. Cases and mech. data B6-112 "D1S" B6-118
1) 2)

VGE = 0 VCE = 25 V f = 1 MHz

VCC = 1200 V VGE = + 15 V / - 15 V 3) IC = 300 A, ind. load RGon = RGoff = 2 Tj = 125 C

20

Inverse Diode 8) VF = VEC IF = 300 A VGE = 0 V; VF = VEC IF = 400 A Tj = 25 (125) C VTO Tj = 125 C rT Tj = 125 C IRR IF = 300 A; Tj = 25 (125) C2) Qrr IF = 300 A; Tj = 25 (125) C2) Diodes of "D1" 8) VF = VEC IF = 300 A VGE = 0 V; IF = 400 A Tj = 25 (125) C VF = VEC VTO Tj = 125 C Tj = 125 C rT IRR IF = 300 A; Tj = 25 (125) C2) Qrr IF = 300 A; Tj = 25 (125) C2) Thermal Characteristics per IGBT Rthjc Rthjc per diode D / "D1 S" per module Rthch

2,2(1,9) 2,7(2,4) 2,46(2,25) 1,3 1,5 2,9 3,2 120(170) 30(72) 2,1(1,8) 2,2(2,1) 1,3 2 120(180) 60(85) 2,4 2,7 1,5 2,5

0,05 0,17/0,12 0,038

by SEMIKRON

0996

B 6 107

SKM 400 GA 173 D ...

B 6 108

0796

by SEMIKRON

 by SEMIKRON

0796

B 6 109

SKM 400 GA 173 D ...

B 6 110

0796

by SEMIKRON

 by SEMIKRON

0796

B 6 111

SKM 400 GA 173 D ...

B 6 112

0796

by SEMIKRON