S amHop Microelectronics C orp.

Green
Product
S T U/D3030NLS
Aug 08 , 2005

N-C hannel Logic Level E nhancement Mode Field E ffect Transistor

P R ODUC T S UMMAR Y F E AT UR E S

V DS S ID R DS (ON) ( mΩ) Max

S uper high dense cell design for low R DS (ON ).

18 @ V G S = 10V
R ugged and reliable.
30V 30A TO-252 and TO-251 P ackage.
25 @ V G S = 4.5V

G G
D
S S G
S TU S E R IE S S TD S E R IE S
TO-252AA(D-P AK) TO-251(l-P AK)
S

ABS OLUTE MAXIMUM R ATINGS (Ta=25 C unless otherwise noted)

P arameter S ymbol Limit Unit
Drain-S ource Voltage V DS 30 V
Gate-S ource Voltage V GS 20 V

Drain C urrent-C ontinuous @ Tc=25 C ID 30 A

a
-P ulsed IDM 75 A
Drain-S ource Diode Forward C urrent IS 20 A

Maximum P ower Dissipation @ Tc=25 C PD 50 W

Operating and S torage Temperature R ange T J , T S TG -55 to 175 C

THE R MAL C HAR AC TE R IS TIC S

Thermal R esistance, Junction-to-C ase R JC 3 C /W

Thermal R esistance, Junction-to-Ambient R JA 50 C /W

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 S T U/D3030NLS
E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted)
Parameter S ymbol Condition Min Typ C Max Unit
5 OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA 30 V
Zero Gate Voltage Drain Current IDS S V DS = 24V, V GS = 0V 1 uA
Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 100 nA
a
ON CHAR ACTE R IS TICS
Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA 1 1.7 3 V
V GS =10V, ID = 20A 13 18 m ohm
Drain-S ource On-S tate R esistance R DS (ON)
V GS =4.5V, ID= 12A 18 25 m ohm
On-S tate Drain Current ID(ON) V DS = 10V, V GS = 10V 50 A
Forward Transconductance gFS V DS = 10V, ID = 20A 25 S
DYNAMIC CHAR ACTE R IS TICS b
Input Capacitance C IS S 830 PF
V DS =15V, V GS = 0V
Output Capacitance C OS S 180 PF
f =1.0MH Z
R everse Transfer Capacitance CRSS 120 PF

Gate resistance Rg V GS =0V, V DS = 0V, f=1.0MH Z 3 ohm

S WITCHING CHAR ACTE R IS TICS b
Turn-On Delay Time tD(ON) V DD = 15V 11 ns
R ise Time tr ID = 1 A 16 ns
V GS = 10V
Turn-Off Delay Time tD(OFF) R GE N = 6 ohm 35 ns
Fall Time tf 10 ns
Total Gate Charge Qg V DS =15V, ID =20A,V GS =10V 17 nC
V DS =15V, ID =20A,V GS =4.5V 9 nC
Gate-S ource Charge Q gs V DS =15V, ID = 20A 1.8 nC
Gate-Drain Charge Q gd V GS =10V 5 nC
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S T U/D3030NLS
E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted)
Parameter S ymbol Condition Min Typ Max Unit
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a
Diode Forward Voltage VSD V GS = 0V, Is = 10A 0.97 1.3 V

Notes
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
50 20
V G S =10V V G S =4V
V G S =4.5V
40
15
ID , Drain C urrent(A)

I D , Drain C urrent (A)

V G S =8V
30
10
20 T j=125 C

V G S =3V 5
10 25 C -55 C

0 0
0 0.5 1 1.5 2 2.5 3 0 0.7 1.4 2.1 2.8 3.5 4.2

V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V )

F igure 1. Output C haracteris tics F igure 2. Trans fer C haracteris tics

30 1.6

V G S =10V
R DS (ON) , On-R es is tance

25 1.4
I D =20A
V G S =4.5V
R DS (on) (m Ω)

V G S =4.5V
Normalized

20 1.2
I D =12A

15 1.0

10 V G S =10V 0.8

5 0.6

0 0.4
0 10 20 30 40 50 -55 -25 0 25 50 75 100 125
T j( C )
I D , Drain C urrent (A) T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent F igure 4. On-R es is tance V S J unction
and G ate V oltage Temperature

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 S T U/D3030NLS

Drain-S ource B reakdown V oltage

G ate-S ource T hres hold V oltage

1.2 1.15

1.1 V DS =V G S I D =250uA
1.10
I D =250uA

B V DS S , Normalized
V th, Normalized

1.0 1.05
0.9
1.00
0.8
0.95
0.7
0.90
6 0.6
0.5 0.85
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
T j, J unction T emperature ( C ) T j, J unction T emperature ( C )

F igure 5. G ate T hres hold V ariation F igure 6. B reakdown V oltage V ariation

with T emperature with T emperature

42 20.0
I D =20A
35 125 C 25 C
Is , S ource-drain current (A)

10.0
R DS (on) (m Ω)

28
70 C
125 C
21

25 C
14
70 C

0 1.0
0 2 4 6 8 10 0.4 0.6 0.8 1.0 1.2 1.4

V G S , G ate-S ource Voltage (V ) V S D , B ody Diode F orward V oltage (V )

F igure 7. On-R es is tance vs . F igure 8. B ody Diode F orward V oltage

G ate-S ource V oltage V ariation with S ource C urrent

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 S T U/D3030NLS
1200 10

V G S , G ate to S ource V oltage (V )

V DS =15V
1000
8 I D =20A
C , C apacitance (pF )

C is s
800
6
600
4
400
C os s
6 200
2
C rs s
0 0
0 5 10 15 20 25 30 0 3 6 9 12 15 18 21 24
V DS , Drain-to S ource Voltage (V ) Qg, T otal G ate C harge (nC )

F igure 9. C apacitance F igure 10. G ate C harge

200 100
80
it
S witching T ime (ns )

im
)L
I D , Drain C urrent (A)

100 N 1m
60 T D(off) S (O 1 s
1 0 0 ms
D
R
Tr 0m
1s s
10 T D(on)
Tf 10 DC

V DS =15V ,ID=1A V G S =10V

1 1 S ingle P ulse
V G S =10V
T c=25 C
0.5
1 6 10 60 100 300 600 0.1 1 10 30 60
R g, G ate R es is tance ( Ω) V DS , Drain-S ource V oltage (V )

F igure 11.s witching characteris tics F igure 12. Maximum S afe

O perating Area

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 S T U/D3030NLS

V DD
ton toff
RL td(on) tr td(off) tf
V IN 90%
90%
D V OUT
VG S V OUT 10% INVE R TE D 10%
R GE N G
90%
6
50% 50%
S V IN
10%

P ULS E WIDTH

F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms

1
T ransient T hermal Impedance

D=0.5
r(t),Normalized E ffective

0.2
0.1
P DM
0.1
0.05
t1
0.02 t2
0.01 1. R įJ A (t)=r (t) * R įJ A
2. R įJ A =S ee Datas heet
S ING LE P ULS E 3. T J M-T A = P DM* R įJ A (t)
4. Duty C ycle, D=t1/t2
0.01
-5 -4 -3 -2 -1
10 10 10 10 10 1 10

S quare Wave P uls e Duration (s ec)

F igure 13. Normalized T hermal T rans ient Impedance C urve

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S T U/D3030NLS

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S T U/D3030NLS

5 35 9 3
95 05 7 41
7 85 30 3
84 0.94 3 3
4 5
9 3 9 1
6.00 0 36 4

2.29 BSC 0.090 BSC

9.70 1 82 398
1.425 1.625 56 0.064
0.650 0.850 6 33
L2 0.600 REF. 0.024 REF.

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S T U/D3030NLS
TO251 Tube/TO-252 Tape and Reel Data
TO-251 Tube

" A"

TO-252 Carrier Tape

UNIT:р
PACKAGE A0 B0 K0 D0 D1 E E1 E2 P0 P1 P2 T
TO-252 6.80 10.3 2.50 ӿ1.5 16.0 1.75 7.5 8.0 4.0 2.0 0.3
ӿ2 + 0.1
(16 р* ²0.1 ²0.1 ²0.1 0.3² 0.1² ²0.15 ²0.1 ²0.1 ²0.15 ²0.05
- 0

TO-252 Reel

UNIT:р
TAPE SIZE REEL SIZE M N W T H K S G R V
ӿ330 ӿ97 17.0 2.2 ӿ13.0 2.0
16 р ӿ 330 10.6
+ 1.5 + 0.5
² 0.5 ² 1.0 - 0.2
²0.5
- 0