Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC3893

DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed APPLICATIONS Horizontal deflection output for high resolution display
PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol

Absolute maximum ratings (Ta=25)

SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1400 600 5 8 15 4 50 150 -55~150 UNIT V V V A A A W

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN

2SC3893

TYP.

MAX

UNIT

V(BR)EBO

Emitter-base breakdown voltage

IE=200mA , IC=0

VCEsat VBEsat

Collector-emitter saturation voltage

IC=6A ;IB=1.5A IC=6A ;IB=1.5A

5.0

Base-emitter saturation voltage

1.5

V A

ICBO

Collector cut-off current

VCB=500V; IE=0

10

IEBO

Emitter cut-off current

VEB=5V; IC=0

66

200

mA

hFE

DC current gain

IC=1A ; VCE=5V

12

fT

Transition frequency

IC=0.1A ; VCE=10V

MHz

COB

Collector output capacitance

IE=0 ; VCB=10V;f=1MHz IF=6A

210

pF

VF ts

Diode forward voltage

2.0

V s s

Storage time

tf

Fall time

Resistive load ICP=6A ;IB1=1.2A;IB2=-2.4A RL=33.3

2.5

0.2

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

PACKAGE OUTLINE

2SC3893

Fig.2 Outline dimensions (unindicated tolerance:0.15 mm)