Semiconductors

Lecture 1, Slide # 1 ECE 217 P.J.
Burke, Spring 2002 Last modified 1/13/2013 1:57 AM

ECE217B, Spring 2002
Advanced Semiconductor Devices II

Graduate Course, 3 units

Professor & Class Schedule
Peter Burke
e-mail: pburke@uci.edu
Office: EG 2232
Lect. Mo/We 3:00 4:20 pm in CS 219
Office hours 4:30-5:30 pm
Lecture notes, HWs and solutions online at
http://nano.ece.uci.edu/ece_217b_advanced_semiconductor_devices.htm
and at copy center (ET base) by day of lecture
Textbook:
Fundamentals of III-V Devices: HBTs, MESFETs, and HFETs/HEMTs
William Liu, Wiley (1999), ISBN 0-471-29700-3

Grade:
60% Homework, 40% End-of-term presentation/paper
Lecture 1, Slide # 2 ECE 217 P.J. Burke, Spring 2002 Last modified 1/13/2013 1:57 AM
Reference books:
* means on reserve at the science library
Device physics:
*Physics of Semiconductor Devices, S.M. Sze, Wiley (1981) ISBN 0-471-05661-8
*Modern Semiconductor Device Physics, S.M. Sze, Wiley (1998) ISBN 0-471-15237-4
*High Speed Semiconductor Devices, S.M. Sze, Wiley (1990) ISBN 0-471-62307-5
*Physics of Semiconductor Devices, Michael Shur, Prentice Hall PTR (1996) ISBN 0-13-666496-2
*Solid State Electronic Devices, 5th Edition, Ben G. Streetman (2000), ISBN 0-13-025706-0
GaAs High-Speed Devices, C.Y. Chang and Francis Kai, Wiley (1994) ISBN 0-471-85641-X
*InP-Based Materials and Devices: Physics and Technology, Osamu Wada and Hideki Hasegawa, Wiley (1994) ISBN 0-471-18191-9
SiGe, GaAs, and InP Heterojunction Bipolar Transistors, Jiann S. Yuan, Wiley (1999), ISBN 0-471-19746-7
*Semiconductor Device Fundamentals, Robert F. Pierret, Addison-Wesley (1995), ISBN 020154393-1
*HEMTs and HBTs: Devices, Fabrication, and Circuits, Fazai Ali and Aditya Gupta, Artech House (1991), ISBN 0-89006-401-6
InP HBTs: Growth, Processing, and Applications, B. Jalali and S.J. Pearton, Artech House (1994), ISBN 0-89006-724-4
*Semiconductor Physics and Devices: Basic Principles, Donald A Neamen, McGraw-Hill (1997) ISBN 0-256-24214-3
*Low Dimensional Semiconductor Structures: Fundamentals and Device Applications, Keith Barnham and Dimitri Vvedensky, Cambridge University Press (2001), ISBN 0-521-59103-1.
Modern GaAs Processing Methods, Ralph E. Williams, Artech (1990), ISBN 0-89006-343-5, out of print
Electrical and Thermal Characterization of MESFETs, HEMTs and HBTs, Robert R H Anholt, Artech House (1994), ISBN 0-89006-749-X
*Fundamentals of Semiconductor Theory and Device Physics, Shyh Wang, Prentice Hall (1989), ISBN 0-13-344409-0 (out of print)
*Device Electronics for Integrated Circuits, 2nd Edition, Richard S Muller and Theodore I Kamins, Wiley (1986), ISBN 0-471-88758-7,
*Compound Semiconductor Device Physics, Sandip Tiwari, Academic Press (1991), ISBN 0-12-691740-X (out of print)
High-frequency (microwave, mm-wave) engineering:
*Microwave Engineering, 2nd Edition, David Pozar, Wiley (1997), ISBN 0-471-17096-8
Microwave and RF Wireless Systems, David Pozar, Wiley (2000), ISBN 0-471-32282-2
*Foundations for Microstrip Circuit Design, 2nd Edition, T.C. Edwards, Wiley (1991), ISBN 0-471-93062-8. (out of print)
*Fields and Waves in Communications Electronics, 3rd Edition, Simon Ramo, John R. Whinnery, Theodore Van Duzer, Wiley (1994) ISBN 0-471-58551-3 (out of print)
*Microstrip Lines and Slotlines, 2nd Edition, K.C. Gupta, Ramesh Garg, Inder Bahl, Prakash Bhartia, Artech House (1996), ISBN 0-89006-766-X
*Transmission Line Design Handbook, Brian C. Wadell, Artech House (1991), ISBN 0-89006-436-9
*Microwave Transistor Amplifiers: Analysis and Design, 2nd Edition, Guillermo Gonzalez, Prentice Hall (1997), ISBN 0-13-254335-4

ECE217B Advanced Semiconductor Devices II (3) S.
Metal-semiconductor field-effect transistors (MESFET),
heterojunction bipolar transistors (HBT),
microwave semiconductor devices, equivalent circuits, device
modeling and fabrication, microwave amplifiers, transmitters, and receivers.
Prerequisite: ECE114A.
HW will be hard if you do not meet the prerequisite.
Course Outline
1. Review of basic semiconductor physics and III-Vs
2. Two-terminal devices
3. HBT DC properties
4. HBT high frequency properties
5. FET DC properties
6. FET high frequency properties
7. Noise models
8. Quantum devices: resonant tunneling diodes
9. Nano-scale devices: Landauer-Buttiker formalism, single
electron transistors, quantum point contacts, quantum
dots, carbon nanotubes

Also
As needed by the class:
1. Electromagnetic wave propagation in
infinite media
2. Coaxial and microstrip transmission
lines
3. S-parameters, reflections, impedances,
gains, and Smith chart
III-V vs. Silicon
Silicon is inexpensive and mature
Why bother with III-V?
Speed
Power
Noise
Optically active
These are niche markets, but its a big
niche
Speed
From Sze, Physics of Semiconductor Devices
Speed
High speed HEMTs:
f
T
= v
max
/(2 t L )
Si 0.18 m CMOS @ 30 GHz
InP based @ 362 GHz (fastest)
Endoh et al, 12th Intl. Conf. on InP, 2000
(Fujitsu)
(draw in Si, SiGe)
Noise
Optics
(Adapted from Streetman, Solid State Electronic Devices)
0.01
0.1
1
10
100
A
t
t
e
n
u
a
t
i
o
n

(
d
B
/
k
m
)
1.8 1.6 1.4 1.2 1.0 0.8
Wavelength (m)
Rayleigh
Scattering
Infrared
aborption
Band gap engineering
Controlled growth of any structure you can
imagine in the z-direction
Important to LATTICE MATCH
Dislocations/misfits INCREASE the non-
radiative recombination rate, causing
higher laser threshold currents
GaAs, InP typical substrates
MBE, MOCVD, LPE
MBE
epitaxial growth
GaAs
AlAs
AlAs
1.4 eV
2.2 eV
V
z
Also InP, InGaAs, InAlAs, InGaAsP
MBE
4 atom per layer!
(From Streetman, Solid State Electronic Devices)
Band gaps
Outline
Quantum mechanics
Free electrons in a box (Fermi gas)
Band theory of solids
Fermi/Dirac distribution function
Doping
Electrical conduction in semiconductors
Drift
Diffusion
Haynes/Schockley experiment
All bulk this week (discuss)
Free electron theory of solids
Each atom in the solid gives up one electron
Each electron is free to move where-ever it
wants, with no scattering
Amazingly, this simple idea makes predictions
that are true!
Not for semiconductors, but metals
Still need to understand this for semiconductors
Electrons are waves, too.
Quantum mechanics of free
particles:
2
) , ( t r
+
is probability of finding an electron at point r at time t.
+ is complex, and both real and imaginary parts are physical.
particles:
2
) , ( t r
+
is probability of finding an electron at point r at time t.
) (
~ ) , (
t r k i
e t r
e
+

For a free particle:

k p

=
m
k
m
p
E
2
) (
2
2 2
= =
Momentum: Energy:
/ E = e
+ is complex, and both real and imaginary parts are physical.
Schrodinger equation:
) , (
2
) , (
2
2 2
t x
x m
t x
t
i +
c
c
= +
c
c
(Time dependent)
(1 dimension)
) , (
2
) , (
2
2 2
t x
x m
t x
t
i +
c
c
= +
c
c
) (
) , (
t kx i
e A t x
e
= +
Let
(Time dependent)
A is a (complex) constant.
(1 dimension)
) , (
2
) , (
2
2 2
t x
x m
t x
t
i +
c
c
= +
c
c
) (
) , (
t kx i
e A t x
e
= +
Then
Let
) ( ) (
) ( ) , (
t kx i t kx i
e A i i e A
t
i t r
t
i
e e
e

=
c
c
= +
c
c

(Time dependent)
(1 dimension)
) , (
2
) , (
2
2 2
t x
x m
t x
t
i +
c
c
= +
c
c
) (
) , (
t kx i
e A t x
e
= +
) , (
) (
t x E e A E
t kx i
+ = =
e
Then
Let
) ( ) (
) ( ) , (
t kx i t kx i
e A i i e A
t
i t r
t
i
e e
e

=
c
c
= +
c
c

(Time dependent)
(1 dimension)
) , (
2
) , (
2
2 2
t x
x m
t x
t
i +
c
c
= +
c
c
) (
) , (
t kx i
e A t x
e
= +
) , (
) (
t x E e A E
t kx i
+ = =
e
Then
Let
( ) ( ) ( )
) (
2
2
) (
2
2 2
2
2 2
2 2
) , (
2
t kx i t kx i
e A ik
m
e A
x m
t x
x m
e e
|
|
.
|
\
|
=
c
c
= +
c
c

) ( ) (
) ( ) , (
t kx i t kx i
e A i i e A
t
i t r
t
i
e e
e

=
c
c
= +
c
c

(Time dependent)
(1 dimension)
) , (
2
) , (
2
2 2
t x
x m
t x
t
i +
c
c
= +
c
c
) (
) , (
t kx i
e A t x
e
= +
) , (
) (
t x E e A E
t kx i
+ = =
e
Then
Let
( ) ( ) ( )
) (
2
2
) (
2
2 2
2
2 2
2 2
) , (
2
t kx i t kx i
e A ik
m
e A
x m
t x
x m
e e
|
|
.
|
\
|
=
c
c
= +
c
c

) ( ) (
) ( ) , (
t kx i t kx i
e A i i e A
t
i t r
t
i
e e
e

=
c
c
= +
c
c

( ) ) , (
2 2
2
) (
2 2
t x
m
p
e A
m
k
t kx i
+ = =
e
(Time dependent)
(1 dimension)
) , (
2
) , (
2
) , (
2
2
2
2
2
2 2
2
2
t r
z y x m
t r
m
t r
t
i

+
|
|
.
|
\
|
c
c
+
c
c
+
c
c
= + V = +
c
c
(3 dimensions)
) , (
2
) , (
2
) , (
2
2
2
2
2
2 2
2
2
t r
z y x m
t r
m
t r
t
i

+
|
|
.
|
\
|
c
c
+
c
c
+
c
c
= + V = +
c
c
( ) t z k y k x k i
t r k i
z y x
e A e A t r
e
e
+ +

= = +
) (
) (
) , (

Let
(3 dimensions)
) , (
2
) , (
2
) , (
2
2
2
2
2
2 2
2
2
t r
z y x m
t r
m
t r
t
i

+
|
|
.
|
\
|
c
c
+
c
c
+
c
c
= + V = +
c
c
( ) t z k y k x k i
t r k i
z y x
e A e A t r
e
e
+ +

= = +
) (
) (
) , (

Then
Let
) , ( ) , ( ) ( ) , ( t r E t r i i t r
t
i

+ = + = +
c
c
e
(3 dimensions)
as before.
) , (
2
) , (
2
) , (
2
2
2
2
2
2 2
2
2
t r
z y x m
t r
m
t r
t
i

+
|
|
.
|
\
|
c
c
+
c
c
+
c
c
= + V = +
c
c
( ) t z k y k x k i
t r k i
z y x
e A e A t r
e
e
+ +

= = +
) (
) (
) , (

Then
Let
( )
) (
2
2
2
2
2
2 2
2
2
2
2
2
2 2
2
) , (
2
t r k i
e A
z y x m
t r
z y x m
e
|
|
.
|
\
|
c
c
+
c
c
+
c
c
= +
|
|
.
|
\
|
c
c
+
c
c
+
c
c

) , ( ) , ( ) ( ) , ( t r E t r i i t r
t
i

+ = + = +
c
c
e
(3 dimensions)
as before.
But:
) , (
2
) , (
2
) , (
2
2
2
2
2
2 2
2
2
t r
z y x m
t r
m
t r
t
i

+
|
|
.
|
\
|
c
c
+
c
c
+
c
c
= + V = +
c
c
( ) t z k y k x k i
t r k i
z y x
e A e A t r
e
e
+ +

= = +
) (
) (
) , (

Then
Let
( )
) (
2
2
2
2
2
2 2
2
2
2
2
2
2 2
2
) , (
2
t r k i
e A
z y x m
t r
z y x m
e
|
|
.
|
\
|
c
c
+
c
c
+
c
c
= +
|
|
.
|
\
|
c
c
+
c
c
+
c
c

) , ( ) , ( ) ( ) , ( t r E t r i i t r
t
i

+ = + = +
c
c
e
(3 dimensions)
as before.
But:
( ) ( ) ( ) ( )( ) ) , (
2
) (
2
2 2 2
2
) (
2 2 2
2
t r
m
k k k
e A ik ik ik
m
z y x t r k i
z y x
+
|
|
.
|
\
|
+ +
= + +
|
|
.
|
\
|
=
e
) , (
2
) , (
2
) , (
2
2
2
2
2
2 2
2
2
t r
z y x m
t r
m
t r
t
i

+
|
|
.
|
\
|
c
c
+
c
c
+
c
c
= + V = +
c
c
( ) t z k y k x k i
t r k i
z y x
e A e A t r
e
e
+ +

= = +
) (
) (
) , (

Then
Let
( )
) (
2
2
2
2
2
2 2
2
2
2
2
2
2 2
2
) , (
2
t r k i
e A
z y x m
t r
z y x m
e
|
|
.
|
\
|
c
c
+
c
c
+
c
c
= +
|
|
.
|
\
|
c
c
+
c
c
+
c
c

) , ( ) , ( ) ( ) , ( t r E t r i i t r
t
i

+ = + = +
c
c
e
( ) ) , (
2 2
2
) (
2 2
t r
m
p
e A
m
k
t r k i

+ = =
e
(3 dimensions)
as before.
But:
( ) ( ) ( ) ( )( ) ) , (
2
) (
2
2 2 2
2
) (
2 2 2
2
t r
m
k k k
e A ik ik ik
m
z y x t r k i
z y x
+
|
|
.
|
\
|
+ +
= + +
|
|
.
|
\
|
=
e
particles:
) (
~ ) , (
t r k i
e t r
e
+

) ( ) (
) ( ) , (
t kx i
n
t x k i
n
e k A dk e A t r
n n
e e
}
= +

Generally,
is also a possibility.
Time-independent Schrodinger equation
) (
) , (
t r k i
e A t r
e
= +

) (
) , (
t r k i
e A t r
e
= +

( )
t i
z k y k x k i t z k y k x k i
e e A e A
z y x z y x
e
e

+ + + +
= =
) ( ) (
) (
) , (
t r k i
e A t r
e
= +

( )
t i
e e A e A
z y x z y x
e
e

+ + + +
= =
) ( ) (
) (r
Call this
) (
) , (
t r k i
e A t r
e
= +

( )
t i
e e A e A
z y x z y x
e
e

+ + + +
= =
) ( ) (
) (r
Call this
t i
e r t r
e

= + ) ( ) , (

) (
) , (
t r k i
e A t r
e
= +

( )
t i
e e A e A
z y x z y x
e
e

+ + + +
= =
) ( ) (
) (r
Call this
t i
e r t r
e

= + ) ( ) , (

) , (
2
) , (
2
2
t r
m
t r
t
i

+ V = +
c
c
From:
) (
) , (
t r k i
e A t r
e
= +

( )
t i
e e A e A
z y x z y x
e
e

+ + + +
= =
) ( ) (
) (r
Call this
t i
e r t r
e

= + ) ( ) , (

) , (
2
) , (
2
2
t r
m
t r
t
i

+ V = +
c
c
( )
t i t i t i t i
e r
m
t r
m
e r E e r i i e r
t
i t r
t
i
e e e e
e

V = + V = = =
c
c
= +
c
c
) (
2
) , (
2
) ( ) ( ) ( ) , (
2
2
2
2
From:
) (
) , (
t r k i
e A t r
e
= +

( )
t i
e e A e A
z y x z y x
e
e

+ + + +
= =
) ( ) (
) (r
Call this
t i
e r t r
e

= + ) ( ) , (

) , (
2
) , (
2
2
t r
m
t r
t
i

+ V = +
c
c
( )
t i t i t i t i
e r
m
t r
m
e r E e r i i e r
t
i t r
t
i
e e e e
e

V = + V = = =
c
c
= +
c
c
) (
2
) , (
2
) ( ) ( ) ( ) , (
2
2
2
2
From:
) ( ) (
2
2
2
r E r
m

= V
Confined particles: A box
L
L
L
Goal: find
) (r
Similar to electric field inside the box.

L
L
L
.
z
.
y
.
x
Goal: find
) (r
0 ) (
2
= r
Everywhere outside the box

In particular,
0 ) (
2
= r
on the boundaries.
As before, we will consider all six surfaces:
Boundary conditions:
L
L
L
) (
) (
z k y k x k i
z y x
e A r
+ +
=
.
z
.
y
.
x
The plane x=0:
Try:
L
L
L
) (
) (
z k y k x k i
z y x
e A r
+ +
=
.
z
.
y
.
x
The plane x=0:
Does not solve boundary condition!!!
) ( ) (
) , , 0 (
z k y k i z k y k x k i
z y z y x
e A e A z y x
+ + +
= = =
0
Try:
L
L
L
) (
) (
z k y k x k i
z y x
e A r
+ +
=
.
z
.
y
.
x
The plane x=0:
) ( z k y k x k i
z y x
e A
+ +

Lets try something:
L
L
L
) (
) (
z k y k x k i
z y x
e A r
+ +
=
.
z
.
y
.
x
The plane x=0:
) ( z k y k x k i
z y x
e A
+ +

( )
) (
) (
z k y k i
x ik x ik
z y
x x
e e e A r
+

=
b a b a
e e e =
Lets try something:

L
L
L
) (
) (
z k y k x k i
z y x
e A r
+ +
=
.
z
.
y
.
x
The plane x=0:
) ( z k y k x k i
z y x
e A
+ +

( )
) (
) (
z k y k i
x ik x ik
z y
x x
e e e A r
+

=
( )
) (
) , , 0 (
z k y k i
x ik x ik
z y
x x
e e e A z y x
+

= =
0 0
b a b a
e e e =
Lets try something:

L
L
L
) (
) (
z k y k x k i
z y x
e A r
+ +
=
.
z
.
y
.
x
The plane x=0:
) ( z k y k x k i
z y x
e A
+ +

( )
) (
) (
z k y k i
x ik x ik
z y
x x
e e e A r
+

=
( )
) (
) , , 0 (
z k y k i
x ik x ik
z y
x x
e e e A z y x
+

= =
0 0
b a b a
e e e =
( ) 0
) (
0 0
= =
+ z k y k i
z y
e e e A
Lets try something:
L
L
L
) (
) (
z k y k x k i
z y x
e A r
+ +
=
.
z
.
y
.
x
The plane x=0:
Does solve boundary condition!!!
) ( z k y k x k i
z y x
e A
+ +

( )
) (
) (
z k y k i
x ik x ik
z y
x x
e e e A r
+

=
( )
) (
) , , 0 (
z k y k i
x ik x ik
z y
x x
e e e A z y x
+

= =
0 0
b a b a
e e e =
( ) 0
) (
0 0
= =
+ z k y k i
z y
e e e A
Lets try something:
L
L
L
.
z
.
y
.
x
The plane x=L:
( )
) (
) (
z k y k i
x ik x ik
z y
x x
e e e A r
+

=
) (
) sin( 2
z k y k i
x
z y
e x k iA
+
=
? 0 ) sin( 2 ) , , (
) (
= = =
+ z k y k i
x
z y
e L k iA z y L x
( )
u u
u
i i
e e
i
=
2
1
) sin(
L n k
n
/ t =
If and only if:
L
L
L
.
z
.
y
.
x
The plane x=L:
( )
) (
) (
z k y k i
x ik x ik
z y
x x
e e e A r
+

=
L
L
L
.
z
.
y
.
x
The plane x=L:
( )
) (
) (
z k y k i
x ik x ik
z y
x x
e e e A r
+

=
) (
) sin( 2
z k y k i
x
z y
e x k iA
+
=
( )
u u
u
i i
e e
i
=
2
1
) sin(
L
L
L
.
z
.
y
.
x
The plane x=L:
( )
) (
) (
z k y k i
x ik x ik
z y
x x
e e e A r
+

=
) (
) sin( 2
z k y k i
x
z y
e x k iA
+
=
? 0 ) sin( 2 ) , , (
) (
= = =
+ z k y k i
x
z y
e L k iA z y L x
( )
u u
u
i i
e e
i
=
2
1
) sin(
L
L
L
.
z
.
y
.
x
The plane x=L:
( )
) (
) (
z k y k i
x ik x ik
z y
x x
e e e A r
+

=
) (
) sin( 2
z k y k i
x
z y
e x k iA
+
=
? 0 ) sin( 2 ) , , (
) (
= = =
+ z k y k i
x
z y
e L k iA z y L x
( )
u u
u
i i
e e
i
=
2
1
) sin(
L n k
n
/ t =
If and only if:
L
L
L
.
z
.
y
.
x
) sin( ) sin( ) sin( ) 2 ( ) (
3
z k y k x k A i r
z
y
n x
n n
=
L n k
x n
x
/ t =
We can do the same for y, z:
L n k
y n
y
/ t =
L n k
z n
z
/ t =
L
L
L
.
z
.
y
.
x
) sin( ) sin( ) sin( ) 2 ( ) (
3
z k y k x k A i r
z
y
n x
n n
=
L n k
x n
x
/ t =
We can do the same for y, z:
) (
2
) / (
2
) (
2 2 2
2 2
2 2 2
2
z y x
n n n
n n n
m
L
m
k k k
E
z y x
+ + =
+ +
=
t
These are the allowed energy levels, or quantum states

L n k
y n
y
/ t =
L n k
z n
z
/ t =
Many electrons:
L
L
L
.
z
.
y
.
x
) (
2
) / (
2 2 2
2 2
z y x
n n n
m
L
E + + =
t
These are the allowed energy levels,
or quantum states
Pauli exclusion principle: Each unique combination of n
x
, n
y
, n
z
can
only have two electrons (spin up, spin down).
Energy spectrum of free particles:
n
x
=1, n
y
=1, n
z
=1
e
n
e
r
g
y

n
x
=2, n
y
=1, n
z
=1 n
x
=1, n
y
=2, n
z
=1 n
x
=1, n
y
=1, n
z
=2
Etc.
Density of states:
e
n
e
r
g
y

? = dE N
E
Number of states with energy between E and E + dE
E
E+dE
How many states?
If L is large, states are very close together.
Approximate as a continuum.
? ) ( = dE E
Number of states with energy between E and E + dE per volume.
Density of states:
Easier first to think of in k-space:
Density of states in k-space is uniform:
One state per (t/L)
3
:
k
x
k
y
k
z
Density of states:
Easier first to think of in k-space:
Density of states in k-space is uniform:
One state per (t/L)
3
:
From Verdeyen
Density of states:
k
x
k
y
k
z
? = dk N
k
Number of states between k, k+dk:
2 2 2
z y x
k k k k + +
L n k
x n
x
/ t =
L n k
y n
y
/ t =
L n k
z n
z
/ t =
From Verdeyen
? = dk N
k
Volume of spherical shell
=4tk
2
dk/8
8 is for upper right quadrant
Number of states in volume=
Volume x States/volume
States/volume = 1 / (t/L)
3
:
( )
2
2
3
3
2
2
) / (
1
8 / 4
t t
t
dk k
L
L
dk k dk N
k
=
|
|
.
|
\
|
=
2
2
volume t
dk k dk N
dk
k
k
=
HW you will do calculation for 2 dimensional world.
? ) ( = dE E
? ) ( = dE E
dE E dk
k
) ( =
We use:
? ) ( = dE E
2
2
t
dk k
dk
k
=
dE E dk
k
) ( =
We use:
? ) ( = dE E
2
2
t
dk k
dk
k
=
E
dE m
dk
mE
k
m
k
E
2
2 2
2
2 2
2 2

= = =
dE E dk
k
) ( =
We use:
? ) ( = dE E
2
2
t
dk k
dk
k
=
E
dE m
dk
mE
k
m
k
E
2
2 2
2
2 2
2 2

= = =
dE E dk
k
) ( =
We use:
? ) ( = dE E
2
2
t
dk k
dk
k
=
E
dE m
dk
mE
k
m
k
E
2
2 2
2
2 2
2 2

= = =
dE E dk
k
) ( =
We use:
dE E
m
dE E
2 / 1
2 / 3 2
2 / 3 2 / 3
2
) ( =
t
Fermi gas:
e
n
e
r
g
y

At zero temperature, as we add electrons to the
box, we gradually fill up all the states.
(DISCUSS PAULI EXCLUSION PRINCIPLE
-IMPORTANT!)

When we are done filling the box, the energy
of the last electron is called the Fermi energy.

Gas means we neglect electron-electron interactions.
All these states are filled with electrons.
E=0
E=E
Fermi
energy
P
(
E
)

Fermi energy:
e
n
e
r
g
y

All these states are
filled with electrons.
E=0
E=E
Fermi
} }
= =
f f
E E
dE E
m
L N
0
2 / 1
2 / 3 2
2 / 3 2 / 1
3
0
E
2
dE electrons #
t
Fermi energy:
e
n
e
r
g
y

E=0
E=E
Fermi
} }
= =
f f
E E
dE E
m
L N
0
2 / 1
2 / 3 2
2 / 3 2 / 1
3
0
E
2
dE electrons #
t
2 / 3
2 / 3 2
2 / 3 2 / 1
3
3
2 2
electrons #
f
E
m
L
t
=
Fermi energy:
e
n
e
r
g
y

E=0
E=E
Fermi
} }
= =
f f
E E
dE E
m
L N
0
2 / 1
2 / 3 2
2 / 3 2 / 1
3
0
E
2
dE electrons #
t
2 / 3
2 / 3 2
2 / 3 2 / 1
3
3
2 2
electrons #
f
E
m
L
t
=
3 / 2
3
3 / 4 3 / 2 2
electrons #
2
3
|
.
|
\
|
=
L m
E
f
t
Fermi energy:
e
n
e
r
g
y

E=0
E=E
Fermi
} }
= =
f f
E E
dE E
m
L N
0
2 / 1
2 / 3 2
2 / 3 2 / 1
3
0
E
2
dE electrons #
t
2 / 3
2 / 3 2
2 / 3 2 / 1
3
3
2 2
electrons #
f
E
m
L
t
=
3 / 2
3
3 / 4 3 / 2 2
electrons #
2
3
|
.
|
\
|
=
L m
E
f
t
In a typical metal, L ~ 0.1 nm.
E
f
~ 10 eV
Occupation probability:
E=E
Fermi
energy
P
(
E
)

P(E) = probability of occupying a state
with energy E
What about finite temperature?
1
0
Recall Boltzmann factor P(c):

The probability for a physical system to be in
a state with energy c is proportional to .

Boltzmann:
T k
B
e
/ c
This is actually not quite true. It is classical.
A quantum calculation shows for electrons:
1
1
) (
/ ) (
+
=
kT E E
f
e
E P
Called Fermi-Dirac distribution function.
Boltzman is high-energy limit (discuss!)
Fermi-Dirac:
E=E
Fermi
energy
P
(
E
)

1
1
) (
/ ) (
+
=
kT E E
f
e
E P
kT

P=1/2 at E
f
for all temperatures.
1
0

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Lecture 1, Slide # 1 ECE 217 P.J.

Burke, Spring 2002 Last modified 1/13/2013 1:57 AM

For a free particle:

Similar to electric field inside the box.

Everywhere outside the box

Lets try something:

Lets try something:

These are the allowed energy levels, or quantum states

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