Threshold voltage fluctuation has been experimentally studied, using a newly developed test structure utilizing an 8 k-NMOSFET array.

It has been experimentally shown that both Vth and the channel dopant number na distributions are given as the Gaussian function, and verified that the standard deviation of na , can be expressed as the square root of the average of na , which is consistent with statistics. In this study, it has been shown that Vth fluctuation (Vth) is mainly caused by the statistical fluctuation of the channel dopant number which explains about 60% of the experimental results. Moreover, we discuss briefly a new scaling scenario, based on the experimental results of the channel length, the gate oxide thickness, and the channel dopant dependence, we discuss Vth fluctuation of Vth. Finally caused by the independent statistical-variations of two different dopant atoms in the counter ion implantation process