[Use of MATLAB for plots is appreciated] Q1.

) For a MOS Capacitor which is fabricated on a p type substrate, Na = 5E15cm-3, with oxide thickness of 10nm, find Cox and the threshold voltage and draw the ideal CV Characteristics and explain it. Explain the effect of oxide charges and the interface trap charges on the threshold voltage and the CV plot (draw it), assuming the Qox = 0 and Qss = 4E10 qC/cm3. Also find Cmin and xdmax. Q2.) Draw Energy Band Diagram of a n- channel and p-channel MOSFET and explain accumulation, depletion and inversion regions. Also draw Id-Vg and Id-Vds characteristics of the MOSFET and explain it. Q3.) Make a ppt on SCE and its remedies and submit it. Be creative and you can give your own ideas other than text book ones SCE = CLM, Velocity Saturation, Mobility Degradation, Subthreshold conduction, hot electron effects, pin-hole effects, DIBL, GIDL etc Q4.)

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