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  • NTE289A & NTE290A Silicon Audio Power Transistors

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    Juan Manuel Han Mac
    29 Ansichten2 Seiten
    The document describes the NTE289A and NTE290A silicon complementary transistors that are suitable for audio power amplifier applications. The transistors feature a high breakdown voltage of 80V minimum, can handle currents up to 500mA continuously and 800mA peak, and have a low saturation voltage of 0.2-0.6V. The document provides maximum ratings and typical electrical characteristics for the transistors including current gain, cutoff currents, bandwidth, and output capacitance. Notes describe available matched pairs and complementary pairs of the transistors.

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    Originaltitel

    2sc1213a c NTE289A

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    The document describes the NTE289A and NTE290A silicon complementary transistors that are suitable for audio power amplifier applications. The transistors feature a high breakdown voltage of 80V minimum, can handle currents up to 500mA continuously and 800mA peak, and have a low saturation voltage of 0.2-0.6V. The document provides maximum ratings and typical electrical characteristics for the transistors including current gain, cutoff currents, bandwidth, and output capacitance. Notes describe available matched pairs and complementary pairs of the transistors.

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    29 Ansichten2 Seiten

    NTE289A & NTE290A Silicon Audio Power Transistors

    Hochgeladen von

    Juan Manuel Han Mac
    The document describes the NTE289A and NTE290A silicon complementary transistors that are suitable for audio power amplifier applications. The transistors feature a high breakdown voltage of 80V minimum, can handle currents up to 500mA continuously and 800mA peak, and have a low saturation voltage of 0.2-0.6V. The document provides maximum ratings and typical electrical characteristics for the transistors including current gain, cutoff currents, bandwidth, and output capacitance. Notes describe available matched pairs and complementary pairs of the transistors.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Als PDF, TXT herunterladen oder online auf Scribd lesen
    Markieren Sie unangemessene Inhalte
    von 2

    NTE289A (NPN) & NTE290A (PNP)

    Silicon Complementary Transistors


    Audio Power Amplifier
    Features:
    D High Breakdown Voltage: V(BR)CEO = 80V Min
    D High Current: IC = 500mA
    D Low Saturation Voltage
    Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
    CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
    CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
    EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
    Collector Current , IC
    Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
    Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA
    Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW
    Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
    Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C
    Electrical Characteristics: (TA = +25C unless otherewise specified)
    Parameter

    Symbol

    Test Conditions

    Min

    Typ

    Max Unit

    CollectorBase Breakdown Voltage

    V(BR)CBO IC = 10A, IE = 0

    100

    CollectorEmitter Breakdown Voltage

    V(BR)CEO IC = 1mA, RBE = Open

    80

    EmitterBase Breakdown Voltage

    V(BR)EBO IE = 10A, IC = 0

    Collector Cutoff Current

    ICBO

    VCB = 40V, IE = 0

    1.0

    Emitter Cutoff Current

    IEBO

    VEB = 4V, IC = 0

    1.0

    DC Current Gain

    CollectorEmitter Saturation Voltage


    NTE289A

    hFE (1)

    VCE = 5V, IC = 50mA

    100

    200

    hFE (2)

    VCE = 5V, IC = 400mA (Pulse)

    35

    IC = 400mA, IB = 40mA

    0.2

    0.6

    0.25 0.60

    VCE = 10V, IC = 10mA

    120

    MHz

    VCB = 10V, f = 1MHz

    pF

    pF

    VCE(sat)

    NTE290A
    CurrentGain Bandwidth Product
    Output Capacitance
    NTE289A
    NTE290A

    fT
    Cob

    Note 1. NTE289AMP is a matched pair of NTE289A with their DC Current Gain (hFE) matched to
    within 10% of each other.
    Note 2. NTE290AMCP is a matched complementary pair containing 1 each of NTE289A (NPN) and
    NTE290A (PNP).

    .135 (3.45) Min


    .210
    (5.33)
    Max

    Seating Plane

    .021 (.445) Dia Max

    .500
    (12.7)
    Min

    E C B
    .100 (2.54)
    .050 (1.27)
    .165
    (4.2)
    Max
    .105 (2.67) Max
    .105 (2.67) Max
    .205 (5.2) Max

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