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Vishay Siliconix
VGS(th) (V)
0.8 to 2.5 0.8 to 3.0 0.8 to 2.5 0.6 to 2.5
ID Min (A)
0.32 0.18 0.28 0.23
FEATURES
D D D D D Low On-Resistance: 2.5 W Low Threshold: <2.1 V Low Input Capacitance: 22 pF Fast Switching Speed: 7 ns Low Input and Output Leakage
BENEFITS
D D D D D Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffering High-Speed Circuits Low Error Voltage
APPLICATIONS
D Direct Logic-Level Interface: TTL/CMOS D Solid State Relays D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems
TO-226AA (TO-92)
TO-92S
TO-236 (SOT-23)
1 G 2 1 3 D
3 Top View
Symbol
VDS VGSM VGS ID IDM PD RthJA TJ, Tstg
VN10LLS
60 "30 "20 0.32 0.2 1.4 0.9 0.4 139
VN0605T
60 "30 "20 0.18 0.11 0.72 0.36 0.14 350
VN0610LL
60 "30 "20 0.28 0.17 1.3 0.8 0.32 156
VN2222LL
60 "30 "20 0.23 0.14 1.0 0.8 0.32 156
Unit
V
W _C/W _C
55 to 150
11-1
Parameter Static
Drain-Source B kd Breakdown Voltage V lt Gate-Threshold Voltage
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Min
Max
Unit
V(BR)DSS VGS(th)
70 70 2.1
60 60 0.8 2.5 0.8 3.0 "100 "500 "100 10 500 1.0 500
G Gate-Body B d Leakage L k
IGSS
IDSS
10 500 1000 4.5 4.5 2.4 4.4 230 180 500 100 80 7.5 5 9 5 10 100 750 500 7.5 7.5 7.5 13.5 750
mA
ID(on)
mA
Drain-Source D i S b O R i t On-Resistance
rDS(on)
gfs gos
mS ms
Dynamic
Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS =25 25 V V, VGS = 0 V f = 1 MHz 22 11 2 60 25 5 60 25 5 60 25 5 pF F
Switchingc
Turn-On Time Turn-Off Time Turn-On Time Turn-Off Time tON tOFF tON tOFF VDD = 15 V, , RL = 23 W, ID ^ 0.6 A VGEN = 10 V V, RG = 25 W VDD = 30 V, , RL = 150 W, ID ^ 0.2 A VGEN = 10 V V, RG = 25 W 7 7 7 11 10 10 20 20 VNBF06 10 10 ns
Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. c. Switching time is essentially independent of operating temperature.
11-2
Transfer Characteristics
0.2
2.5 V 2, 1 V 6 0 0 1 2 3 4 5 6
Capacitance
30 Ciss 20 Coss
10
Crss
0 0 5 10 15 20 25 30
Gate Charge
2.0
12
0.5
0 55
30
20
45
70
95
120
145
11-3
rDS = 50 mA 500 mA
TJ = 25_C 0.010
0.001 0
Threshold Voltage
0.50 ID = 250 mA 0.25 V GS(th) Variance (V)
0.00
0.25
0.50
0.75 50
25
25
50
75
100
125
150
TJ Temperature (_C)
1K
10 K
11-4