Si4963BDY

New Product

Vishay Siliconix

Dual P-Channel 2.5-V (G-S) MOSFET

PRODUCT SUMMARY
VDS (V)
20

rDS(on) (W)
0.032 @ VGS = 4.5 V 0.050 @ VGS = 2.5 V

ID (A)
6.5 5.2

S1

S2

SO-8
S1 G1 S2 G2 1 2 3 4 Top View D1 Ordering Information: Si4963BDYE3 (Lead Free) Si4963BDY-T1E3 (Lead Free with Tape and Reel) P-Channel MOSFET D2 P-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C

Symbol
VDS VGS ID IDM IS PD TJ, Tstg

10 secs

Steady State
20 "12

Unit
V

6.5 5.2 40 1.7 2.0 1.3 55 to 150

4.9 3.9 A

0.9 1.1 0.7 W _C

THERMAL RESISTANCE RATINGS

Parameter
M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1 x 1 FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 72753 S-40235Rev. A, 16-Feb-04 www.vishay.com t v 10 sec Steady State Steady State

Symbol
RthJA RthJF

Typical
58 91 34

Maximum
62.5 110 40

Unit

_C/W

Si4963BDY
Vishay Siliconix
New Product

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain Source On-State Drain-Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) DS( ) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55_C VDS v 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 6.5 A VGS = 2.5 V, ID = 2 A VDS = 10 V, ID = 6.5 A IS = 1.7 A, VGS = 0 V 20 0.025 0.040 18 0.75 1.2 0.032 0.050 0.6 1.4 "100 1 5 V nA mA A W S V

Symbol

Test Condition

Min

Typ

Max

Unit

Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 1.7 A, di/dt = 100 A/ms VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, Rg = 6 W f = 1 MHz VDS = 10 V, VGS = 4.5 V, ID = 6.5 A 14 2.6 4.6 8.3 30 40 80 55 40 45 60 120 85 80 ns W 21 nC

Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Output Characteristics
40 VGS = 5 thru 3.5 V 32 I D Drain Current (A) I D Drain Current (A) 3V 32 40

Transfer Characteristics
TC = 55_C 25_C 125_C 24

24 2.5 V 16 2V 1.5 V 0 0 1 2 3 4 5 VDS Drain-to-Source Voltage (V)

16

0 0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

VGS Gate-to-Source Voltage (V) Document Number: 72753 S-40235Rev. A, 16-Feb-04

www.vishay.com

Si4963BDY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.10 r DS(on) On-Resistance ( W ) 2000

Vishay Siliconix

Capacitance

C Capacitance (pF)

0.08

1600 Ciss

0.06

VGS = 2.5 V

1200

0.04 VGS = 4.5 V 0.02

800 Coss 400 Crss

0.00 0 8 16 24 32 40

0 0 4 8 12 16 20

ID Drain Current (A)

VDS Drain-to-Source Voltage (V)

Gate Charge
5 V GS Gate-to-Source Voltage (V) VDS = 10 V ID = 6.5 A 4 rDS(on) On-Resiistance (Normalized) 1.4 1.6

On-Resistance vs. Junction Temperature

VGS = 4.5 V ID = 6.5 A

1.2

1.0

0.8

0 0 2 4 6 8 10 12 14 16 Qg Total Gate Charge (nC)

0.6 50

25

25

50

75

100

125

150

TJ Junction Temperature (_C)

Source-Drain Diode Forward Voltage

40 0.10

On-Resistance vs. Gate-to-Source Voltage

TJ = 150_C 10

r DS(on) On-Resistance ( W )

0.08 ID = 2 A ID = 6.5 A 0.04

I S Source Current (A)

0.06

TJ = 25_C

0.02

1 0.0

0.00 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 5 VSD Source-to-Drain Voltage (V) VGS Gate-to-Source Voltage (V)

Document Number: 72753 S-40235Rev. A, 16-Feb-04

www.vishay.com

Si4963BDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.5 0.4 0.3 0.2 0.1 0.0 0.1 0.2 50 Power (W) ID = 250 mA

Threshold Voltage
30 25 20

Single Pulse Power

VGS(th) Variance (V)

15 10 5

25

25

50

75

100

125

150

0 102

101

1 Time (sec)

10

100

600

TJ Temperature (_C)

100

Safe Operating Area

rDS(on) Limited IDM Limited P(t) = 0.0001

10 I D Drain Current (A) P(t) = 0.001 1 ID(on) Limited TA = 25_C Single Pulse BVDSS Limited 1 10 100 P(t) = 0.01 P(t) = 0.1 0.1 P(t) = 1 P(t) = 10 dc

0.01 0.1

VDS Drain-to-Source Voltage (V)

Normalized Thermal Transient Impedance, Junction-to-Ambient

2 1

Normalized Effective Transient Thermal Impedance

Duty Cycle = 0.5

0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 104 103 102 1 Square Wave Pulse Duration (sec) 101
Notes: PDM t1

t2 1. Duty Cycle, D =

2. Per Unit Base = RthJA = 91_C/W 3. TJM TA = PDMZthJA(t) 4. Surface Mounted

t1 t2

10

100

600

www.vishay.com

Document Number: 72753 S-40235Rev. A, 16-Feb-04

Si4963BDY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2 1

Vishay Siliconix

Normalized Effective Transient Thermal Impedance

Duty Cycle = 0.5

0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 104 103 102 101 Square Wave Pulse Duration (sec) 1 10

Document Number: 72753 S-40235Rev. A, 16-Feb-04

www.vishay.com