Semiconductor Physics and Devices: Basic Principles, 3rd edition

Solutions Manual

Chapter 11
Exercise Solutions

Chapter 11
Exercise Solutions

E11.5
fp = 0.376 V

E11.1

ms = (0.555 0.376) ms = +0.179 V

F 3x10 IJ = 0.376 V
(a) = (0.0259 ) lnG
H 15. x10 K
R 4(11.7)b8.85x10 g(0.376) UV
x =S
T b1.6x10 gb3x10 g W
16

fp

10

1/ 2

14

dT

19

E11.6
From E11.3, ms = 0.981 V
Cox =

16

or

FG 10 IJ = 0.288 V
H 15. x10 K
R 4(11.7)b8.85x10 g(0.288) UV
=S
T b1.6x10 gb10 g W

or

VFB = ms

15

10

19

or

Cox

F / cm

b1.6x10 gb8x10 g
= 0.981
19

1.73 x10

10

E11.7
From E11.4, ms = 0.931 V

b1.6x10 gb8x10 g
= 0.931
19

FG 8x10 IJ = 0.342 V
H 15. x10 K
R 4(11.7)b8.85x10 g(0.342) UV
=S
T b1.6x10 gb8x10 g W

1.73 x10

VFB = 1.01 V

10

19

10

or

15

1/ 2

14

x dT

Qss

g = 1.73x10

15

VFB

fn = (0.0259) ln

200 x10

VFB = 1.06 V

x dT = 0.863 m
E11.2

(3.9) 8.85x10 14

or

1/ 2

14

x dT

t ox

Then

x dT = 0.180 m

(b) fp = (0.0259 ) ln

ox

E11.8
From E11.5, ms = +0.179 V

15

b1.6x10 gb8x10 g
= +0.179
19

VFB

x dT = 0.333 m

10

1.73 x10

or
E11.3

FG 3x10 IJ = 0.376 V
H 15. x10 K
F E + IJ
= G +
H 2e K
16

fp = (0.0259) ln
ms

VFB = +0.105 V
E11.9
From E11.3, ms = 0.981 V and fp = 0.376 V

10

R 4(11.7)b8.85x10 g(0.376) UV = 0.18 m

x =S
T b1.6x10 gb3x10 g W
Now
Q ( max ) = b1.6 x10 gb3 x10 gb 0.18 x10 g

14

fp

dT

= 3.20 (3.25 + 0.555 + 0.376)

or

19

16

19

ms = 0.981 V

16

SD

or
( max ) = 8.64 x10 C / cm
QSD
8

E11.4
fp = 0.376 V

From Equation [11.27b]

ms = (0.555 + 0.376) ms = 0.931 V

163

Semiconductor Physics and Devices: Basic Principles, 3rd edition

Solutions Manual

b gb1.6x10 g
F 250x10 I 0.981 + 2(0.376)
G
H (3.9)b8.85x10 gJK
8

Cmin

19

VTN = 8.64 x10 10

11

Cox

Chapter 11
Exercise Solutions

FG IJ FG x IJ
H KH t K

=
1+

14

VTN = +0.281 V

FG 10 IJ = 0.288 V
H 15. x10 K
R 4(11.7)b8.85x10 g(0.288) UV = 0.863 m
x =S
T b1.6x10 gb10 g W
Then
Q ( max) = b1.6 x10 gb10 gb 0.863 x10 g
dT

Cmin

15

Also

C FB

1/ 2

15

19

Cox

1+

FG IJ FG 1 IJ F kT I FG IJ
H K H t K H e K H eN K
ox

ox

SD

or
( max ) = 1.38 x10 C / cm
QSD
8

Also

=
2

F 3.9 I F 1 I
1+
H 11.7 K H 220 x10 K

b
g
gb3x10 g

(0.0259)(11.7) 8.85x10 14

b1.6x10

gb1.6x10 g = 1.28x10 C / cm
Now, from Equation [11.28]
V = b 1.38 x10 1.28 x10 g
F 220x10 I + 0.97 2(0.288)
G
H (3.9)b8.85x10 gJK
Qss = 8 x10

19

10

IJ
K

15

ox

= 0.294

Cox

10

19

F I FG
H KH

E11.10
From Figure 11.15, ms = +0.97 V

14

dT

From E11.9, x dT = 0.18 m

Then

1
Cmin
=
4
3.9
0.18 x10
Cox
1+
8
11.7 250 x10

or

fn = (0.0259) ln

ox

19

16

or

C FB

Cox

TP

= 0.736

E11.13

14

or

Cox =

VTP = +0.224 V

ox
t ox

(3.9) 8.85x10 14
200 x10
7

By trial and error, let N d = 4 x10 cm , then

fn = 0.383 , ms 1.07 ,
( max ) = 1x10
QSD

and

F I a f
H K
F 50I (650)b1.73x10 gaV
=
H 2K
= b2.81x10 gaV 0.4 f
2

GS

or

specified.

ID

GS

Then

E11.12

Cox

VTP = 0.405 V which is between the limits

Cmin

Cox = 1.73 x10 F / cm

Now
1 W
n Cox VGS VTN
ID =
2 L

E11.11
16

ox

t ox + ox s xdT
=
ox
t ox

VGS = 1 V I D = 1.01 mA
VGS = 2 V I D = 7.19 mA

t ox

t ox +

FG IJ x
H K

VGS = 3 V I D = 19 mA

ox

dT

or

164

0.4

Semiconductor Physics and Devices: Basic Principles, 3rd edition

Solutions Manual

E11.14

F I C aV V f
2H LK
Now
F W I (650)b1.73x10 g (1.75 0.4)
100 x10 =
H LK 2
which yields
F W I = 0.976
H LK
1 W

ID =

(b) fp = (0.0259 ) ln

ox

GS

TN

ox

Cox =

t ox

(3.9) 8.85x10 14
220 x10

g = 1.57 x10

F 60I (310)b157. x10 gaV

H 2K
I = 1.46 x10 aV 0.4 f

or

SG

V = (0.333)
2

F / cm

or

V = (0.333)
or

0.4

Cox = 1.73 x10 V / cm

(a)

2 1.6 x10

14

1.73 x10

= 0.105 V

(i)

F W I F 310I b157. x10 g(1.25 0.4)

H L KH 2 K
7

V = (0.105)
or

F I = 11.4
H LK

Cox =

t ox

or

200 x10

g = 1.73x10

2(0.288) + 1

2( 0.288) + 2

F / cm

Cox = 1.73 x10 V / cm

19

gm =

ox

GS

g(11.7)b8.85x10 gb10 g
14

1.73 x10

16

g m = 2.91 mA / V

1/ 2

or

= 0.333 V

2(0.288)

F W I C aV V f
H LK
= (20)(400)b1.73x10 g(2.5 0.4)

or

Cox

2( 0.288)

V = 0.0888 V

2e s N a

10

E11.19

Now

2 1.6 x10

15

V = 0.052 V
V = (0.105)

(3.9) 8.85x10

FG 10 IJ = 0.288 V
H 15. x10 K

(ii)

which yields
W

ox

1/ 2

VSG = 2 V I D = 3.74 mA

14

15

or

(b) fp = (0.0259 ) ln

E11.17
(a)

g(11.7)b8.85x10 gb10 g

19

VSG = 1.5 V I D = 1.77 mA

2(0.347 )

E11.18

SG

200 x10 =

2( 0.347 ) + 2

V = 0.269 V

VSG = 1 V I D = 0.526 mA

(2)(0.347 ) + 1 2(0.347)

V = 0.156 V

Then

E11.16

10

(ii)

16

ID =

FG 10 IJ = 0.347 V
H 15. x10 K

(i)

E11.15

Chapter 11
Exercise Solutions

1/ 2

165

1/ 2

Semiconductor Physics and Devices: Basic Principles, 3rd edition

Solutions Manual

Now
CM
C gdT

= 1 + g m RL = 1 + (2.91)(100)

or
CM
C gdT
E11.20
fT =
=

= 292

n VGS VT

2L

(400)(2.5 0.4)

2 0.5 x10

or
f T = 53.5 GHz

166

Chapter 11
Exercise Solutions