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: MeRAM

POSTED: 299 DAYS AGO IN: COMPUTER TIPS, GADGETS, , , ,

SDRAM, DDR, DDR2, DDR3 Access memority) International Electron Devices Meeting in San Francisco

MeRAM (Magneto Electric Random 2012 IEEE . .

Voltage-Induced Switching of Nanoscale Magnetic Tunnel Junctions MeRAM spin-transfer torque (STT) . Electron as spin in addition to their charge) , Electron , . . (10 1000 (5 . , TV . ) ), , Voltage (Magetic property of elctrons referred .

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