292

JEDT 7,3

Author (year) Half-wave dipole and GaAs IMPATT diode Half-wave dipole and MA40150- 50 mW 119 Si Schottky diode Microstrip antenna and an EpHEMT detector 89.84 mW at 2.45 GHz, 49.09 mW at 5.8 GHz 2 5 dBm Not available 2 mW/cm2 (115 mW) 10 dBm 0.1 mW/cm 2.55 mW/cm2
2

McSpadden et al. Half-wave dipole (1998a) rectenna

McSpadden et al. Half-wave dipole (1998b) rectenna 14.12 mW 84.4% efciency at 2.45 GHz and 82% at 5.8 GHz

mez et al. Go (2004)

Suh and Chang (2002)

Heikkinen and Kivikoski (2003) Strasner and Chang (2002)

Strasner and Circularly Chang (2003) polarised rectenna Park et al. (2004) Circularly polarised rectenna Hagerty et al. Circularly (2004) polarised rectenna Ali et al. (2005) Circularly polarised rectenna Truncated patch and two model Not available MA4E1317 Schottky diodes 18 dBm 0 dBm 2 20 dBm Patch antenna and HSMS-8202 Schottky diode Microstrip patch and HSMS2852 Schottky diode Patch antenna array and HSMS2820 Schottky diode

Ren and Chang (2006)

Chin et al. (2005) FG-CPW rectenna

Akkermans et al. Probe-fed (2005) microstrip patch rectenna Zbitou et al. Hybrid rectenna (2006)

Table AI. Comparative summary of rectenna designs for electromagnetic energy harvesting
Design Not available Microwave power transmission Microwave power transmission Microwave power transmission, actuators and RFID sensors Microwave power transmission Microwave power transmission Microwave power transmission Microwave power transmission Not available Indoor sensor networks and energy recycling Embedded wireless sensor and data telemetry Microwave power transmission Microwave power transmission and RFID sensors Low-power wireless sensor 20% conversion efciency at 2.45 GHz Not available 57.3% conversion efciency at 5.5 GHz for 300 V load impedance 76% efciency at 5.8 GHz for 100 V loading and 6.22 V DC output voltage 68.5% conversion efciency at 5.8 GHz 40% conversion efciency across 470 V 85% conversion efciency across 165 V resistive load at 2.45 GHz 82% conversion efciency across 327 V load resistor at 5.8 GHz 85.4% overall efciency at 900 MHz

Appendix

Type

Power input

Results

Application

E-pHEMT technology rectenna Dual-frequency rectenna Dual-frequency dipole and MA4E1317 GaAs Schottky diode Shorted ring-slot and HSMS2862 Si Schottky diode pair DLRA and MA4E1317 detector diode Folded dipole and MA4E1317 Schottky diode Circular sector and HSMS-2820 Schottky diode Equiangular spiral and SMS7630-079 Schottky diode Patch antenna and MA4E1317 detector diode 49% efciency at 2.45 GHz and 14% at 5.8 GHz 80% conversion efciency at 5.8 GHz across a 250 V load resistor 82% efciency at 5.8 GHz for a 150 V load 77.8% efciency at 2.4 GHz across 150 V load resistor 20% rectication efciency

Dual-frequency rectenna Circularly polarised rectenna

Circularly polarised rectenna