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M.Tech - II Semester Supplementary April/May 2012 Examinations (for students admitted in 2009- 10 & 2010-11 only) ADVANCED POWER SEMICONDUCTOR DEVICES & PROTECTION
(Power Electronics and Electrical Drives & Power Electronics) Time: 3 hours Max. Marks: 60 Answer any FIVE Questions All Questions carry equal marks ***** 1. (a) Explain the V-I Characteristics of power BJT. (b) Explain with relevant waveforms the secondary break down phenomenon of the semiconductor devices. 2. (a) List out the comparisons between the power BJT and power MOSFET. (b) Describe various gate driving circuits of power MOSFET. 3. (a) Explain the turn on and turn off capabilities of GTO. (b) Explain the physics of device operation for the gate turn-off thyristor. 4. (a) Explain the basic structure and operation of the IGBT. (b) Explain the switching characteristics of IGBT.

5. (a) Explain different high voltage integrated circuits used for the power electronic devices. (b) Explain the structural view of MOS controlled thristors. 6. (a) What is the purpose of keeping heat sinks in power electronic equipments? (b) Briefly discuss the design procedure for developing heat sinks. 7. (a) Discuss the measurements of conducted noise in power electronic equipment. (b) Briefly discuss EMI shielding and EMI standards with respect to electronic equipment. 8. (a) Explain supply and load side transients for the power electronic devices. (b) Explain the fuse protection procedure for the controlled rectifier.

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