1MBK50D-060S

600V / 50A Molded Package

Features
Small molded package Low power loss Soft switching with low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Comprehensive line-up

Molded IGBT

Applications
Inverter for Motor drive AC and DC Servo drive amplifier Uninterruptible power supply

Maximum ratings and characteristics

Absolute maximum ratings (Tc=25C)
Item Collector-Emitter voltage Gate-Emitter voltaga Collector DC Tc=25C current Tc=100C 1ms Tc=25C Max. power dissipation (IGBT) Max. power dissipation (FWD) Operating temperature Storage temperature Screw torque Symbol VCES VGES IC25 IC100 Icp PC PC Tj Tstg Rating 600 20 65 50 150 200 130 +150 -40 to +150 39.2 to 58.8 Unit V V A A A W W C C Nm

Equivalent Circuit Schematic

IGBT + FWD
C:Collector

G:Gate

E:Emitter

Electrical characteristics (at Tc=25C unless otherwise specified)

Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton * tr * trr2 toff tf ton * tr * trr2 toff tf VF trr Characteristics Min. Typ. 4.0 5.0 2.4 2500 240 130 0.15 0.09 0.03 0.50 0.10 0.15 0.09 0.03 0.50 0.10 2.0 0.06 Conditions Max. 1.0 10 6.0 2.9 0.62 0.17 0.62 0.17 2.5 0.10 VGE=0V, VCE=600V VCE=0V, VGE=20V VCE=20V, IC=50mA VGE=15V, IC=50A VGE=0V V CE=25V f=1MHz VCC=300V, IC=50A VGE=15V RG=33 ohm (Half Bridge) Inductance Load VCC=300V, IC=50A VGE=+15V RG=8 ohm (Half Bridge) Inductance Load IF=50A, VGE=0V IF=50A, VGE=-10V, VR=300V, di/dt=100A/s mA A V V pF Unit

Turn-off time Switching Time Turn-on time

Turn-off time FWD forward on voltage Reverse recovery time

V s

*Turn-on characteristics include trr2. See a figure in next page.

Thermal resistance characteristics
Item Thermal resistance Symbol Rth(j-c) Rth(j-c) Characteristics Min. Typ. Conditions Max. 0.63 0.96 IGBT FWD C/W C/W Unit

1MBK50D-060S
Outline drawings, mm
TO-247

Molded IGBT

Gate Collector Emitter

Switching waveform (Inductance load)

Mesurement circuit

1MBK50D-060S
Characteristics
Collector current vs. Collector-Emitter voltage Tj=25C

Molded IGBT

Collector current vs. Collector-Emitter voltage Tj=125C

Collector Current : IC (A)

Collector Current : IC (A)

Collector-Emitter Voltage : VCE (V)

Collector-Emitter Voltage : VCE (V)

Collector-Emitter voltage vs. Gate-Emitter voltage Tj=25C

Collector-Emitter Voltage : VCE (V)

Collector-Emitter voltage vs. Gate-Emitter voltage Tj=125C

Collector-Emitter Voltage : VCE (V)

Gate-Emitter Voltage : VGE (V)

Gate-Emitter Voltage : VGE (V)

Switching time vs. Collector current VCC=300V, RG=8, VGE=+15V, Tj=125C

Switching time vs. Collector current VCC=300V, RG=33, VGE=15V, Tj=125C

Switching time : tf,toff, tr, ton, trr2 (nsec)

Collector current : IC (A)

Switching time : tf,toff, tr, ton, trr2 (nsec)

Collector current : IC (A)

1MBK50D-060S
Characteristics
Switching time vs. RG VCC=300V, IC=50A, VGE=+15V, Tj=125C Switching time vs. RG

IGBT Module

VCC=300V, IC=50A, VGE=15V, Tj=125C

Switching time : tf,toff, tr, ton, trr2 (nsec)

Gate resistance : RG ()

Switching time : tf,toff, tr, ton, trr2 (nsec)

Gate resistance : RG ()

Dynamic input characteristics Tj=25C

Capacitance : Cies, Coes, Cres (nF)

Capacitance vs. Collector-Emitter voltage Tj=25C

Collector-Emitter voltage : VCE (V)

Gate-Emitter voltage : VGE (V)

Collector-Emitter Voltage : VCE (V) Gate charge : Qg (nc)

Reverse Biased Safe Operating Area RG=8, +VGE < =20V, -VGE=15V, Tj < =125C

Forward Bias Safe Operating Area

Collector current : IC (A)

Collector current : IC (A)

Collector-Emitter voltage : VCE (V)

Collector-Emitter voltage : VCE (V)

1MBK50D-060S
Characteristics
Reverse recovery time vs. Forward current VR=300V, -di/dt=100A/sec

IGBT Module

Reverse recovery current vs. Forward current VR=300V, -di/dt=100A/sec

Reverse recovery time : trr [nsec]

Forward current : IF (A)

Reverse recovery current : Irr [A]

Forward current : IF (A)

Reverse recovery chracteristics vs. -di/dt Forward voltage vs. Forward current VR=300V, IF=50A, Tj=125C

Reverse recovery current : Irr [A]

Reverse recovery time : trr [nsec]

Forward Current : IF [A]

Forward Voltage : VF (V)

-di/dt [A/ sec]

Transient thermal resistance

Thermal resistance : Rth(j-c) [C/W]

Pulse width : PW (sec)