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C3198 NPN Epitaxial Silicon Transistor

TO-92

Features
Collector-Emitter Voltage: VCEO=50V Collector Dissipation: PC(max)=625mW

Absolute Maximum Ratings (TA=25oC)


Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ TSTG Rating 60 50 5 150 625 150 -55~+150 Unit V V V mA mW
o o

C C

1. Emitter

2. Collector

3. Base

Electrical Characteristics (TA=25oC)


Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE(1) hFE(2) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency VCE(sat) VBE(sat) fT Test Conditions IC= 100A, IE=0 IC= 1mA, IB=0 IE= 100A, IC=0 VCB= 60V, IE=0 VEB= 5V, IC=0 VCE= 6V, IC= 2mA VCE= 6V, IC= 150mA IC= 100mA, IB= 10mA IC= 100mA, IB= 10mA VCE= 10V, IC= 1mA F=30MHz 80 MHz 70 25 100 0.1 0.25 1 V V Min 60 50 5 .01 0.1 700 Typ Max Unit V V V A A

hFE CLASSIFICATION
Classification hFE O 70-140 Y 120-240 GR 200-400 BL 350-700

Elite Enterprises (H.K.) Co., Ltd.


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Part No.: C3198 Page: 1 / 1