FET Biasing

Chapter 7
Boylestad
Electronic Devices and Circuit Theory
Electronic Devices and Circuit Theory
Boylestad
2013 by Pearson Higher Education, Inc
Upper Saddle River, New Jersey 07458 All Rights Reserved
Ch.7 Summary
Common FET Biasing Circuits
JFET Biasing Circuits
Fixed-Bias
Self-Bias
Voltage-Divider Bias

D-Type MOSFET Biasing Circuits
Self-Bias
Voltage-Divider Bias

E-Type MOSFET Biasing Circuits
Feedback Configuration
Voltage-Divider Bias
Electronic Devices and Circuit Theory
Boylestad
2013 by Pearson Higher Education, Inc
Upper Saddle River, New Jersey 07458 All Rights Reserved
2
1
|
|
.
|

\
|
=
P
GS
DSS D
V
V
I I
Ch.7 Summary
Basic Current Relationships
For all FETs:
A 0 I
G
~
S D
I I =
For JFETS and D-Type MOSFETs:
For E-Type MOSFETs:
2
) (
T GS D
V V k I =
Electronic Devices and Circuit Theory
Boylestad
2013 by Pearson Higher Education, Inc
Upper Saddle River, New Jersey 07458 All Rights Reserved
Ch.7 Summary
Fixed-Bias Configuration
GG GS
GS
DS C
S
D D DD DS
V V
V V
V V
V
R I V V
=
=
=
=
=
V 0
Electronic Devices and Circuit Theory
Boylestad
2013 by Pearson Higher Education, Inc
Upper Saddle River, New Jersey 07458 All Rights Reserved
Ch.7 Summary
Self-Bias Configuration
Electronic Devices and Circuit Theory
Boylestad
2013 by Pearson Higher Education, Inc
Upper Saddle River, New Jersey 07458 All Rights Reserved
) (
D S D DD DS
R R I V V + =
Ch.7 Summary
Self-Bias Calculations
S D S
R I V =
S D GS
R I V =
2. Plot the transfer curve using I
DSS
and V
P

(V
P
= |V
GSoff
| on spec sheets) and a few
points such as V
GS
= V
P
/

4 and V
GS
= V
P
/ 2
etc.
The Q-point is located where the first
line intersects the transfer curve. Using
the value of I
D
at the Q-point (I
DQ
):
1. Select a value of I
D
< I
DSS
and use the component value of R
S
to calculate
V
GS
. Plot the point identified by I
D
and V
GS
and draw a line from the origin of
the axis to this point.
RD DD S DS D
V V V V V = + =
Electronic Devices and Circuit Theory
Boylestad
2013 by Pearson Higher Education, Inc
Upper Saddle River, New Jersey 07458 All Rights Reserved
Ch.7 Summary
Voltage-Divider Bias
I
G
= 0 A

I
D
responds to changes
in V
GS
.
Electronic Devices and Circuit Theory
Boylestad
2013 by Pearson Higher Education, Inc
Upper Saddle River, New Jersey 07458 All Rights Reserved
Ch.7 Summary
Voltage-Divider Bias Calculations
The Q-point is established by plotting a line that intersects the transfer
curve.
2 1
2
R R
V R
V
DD
G
+
=
V
G
is equal to the voltage across
divider resistor R
2
:
Using Kirchhoffs Law:
S D G GS
R I V V =
Electronic Devices and Circuit Theory
Boylestad
2013 by Pearson Higher Education, Inc
Upper Saddle River, New Jersey 07458 All Rights Reserved
Ch.7 Summary
Voltage-Divider Q-Point
Plot the transfer curve by
plotting I
DSS
, V
P
and the
calculated values of I
D

Plot the line that is defined
by these two points:
V
GS
= V
G
, I
D
= 0 A

V
GS
= 0 V, I
D
= V
G
/ R
S
The Q-point is located where the line intersects the transfer
curve
Electronic Devices and Circuit Theory
Boylestad
2013 by Pearson Higher Education, Inc
Upper Saddle River, New Jersey 07458 All Rights Reserved
Ch.7 Summary
Voltage-Divider Bias Calculations
Using the value of I
D
at the Q-point, solve for the other
values in the voltage-divider bias circuit:
S D S
D D DD D
S D D DD DS
R I V
R I V V
R R I V V
=
=
+ = ) (
Electronic Devices and Circuit Theory
Boylestad
2013 by Pearson Higher Education, Inc
Upper Saddle River, New Jersey 07458 All Rights Reserved
Ch.7 Summary
D-Type MOSFET Bias Circuits
Depletion-type MOSFET
bias circuits are similar
to those used to bias
JFETs. The only
difference is that D-type
MOSFETs can operate
with positive values of
V
GS
and with I
D
values
that exceed I
DSS
.
Electronic Devices and Circuit Theory
Boylestad
2013 by Pearson Higher Education, Inc
Upper Saddle River, New Jersey 07458 All Rights Reserved
Ch.7 Summary
Self-Bias Q-Point (D-MOSFET)
Plot the line that is defined by these
two points:

V
GS
= V
G
, I
D
= 0 A
I
D
= V
G
/R
S
, V
GS
= 0 V

Plot the transfer curve using I
DSS
, V
P

and calculated values of I
D
.
The Q-point is located where the line
intersects the transfer curve. Use the
value of I
D
at the Q-point to solve for
the other circuit values.
These are the same steps used to analyze JFET self-bias circuits.
Electronic Devices and Circuit Theory
Boylestad
2013 by Pearson Higher Education, Inc
Upper Saddle River, New Jersey 07458 All Rights Reserved
Ch.7 Summary
Voltage-Divider Bias (D-MOSFET)
Plot the line that is defined by these two
points:
V
GS
= V
G
, I
D
= 0 A
I
D
= V
G
/R
S
, V
GS
= 0 V

Plot the transfer curve using I
DSS
, V
P
and
calculated values of I
D
.

The Q-point is located where the line
intersects the transfer curve. Use the
value of I
D
at the Q-point to solve for the
other variables in the circuit.
These are the same steps used to analyze JFET voltage-divider bias circuits.
Electronic Devices and Circuit Theory
Boylestad
2013 by Pearson Higher Education, Inc
Upper Saddle River, New Jersey 07458 All Rights Reserved
Ch.7 Summary
E-Type MOSFET Bias Circuits
The transfer curve for
the E-MOSFET is
very different from
that of a simple JFET
or D-MOSFET.
Electronic Devices and Circuit Theory
Boylestad
2013 by Pearson Higher Education, Inc
Upper Saddle River, New Jersey 07458 All Rights Reserved
Ch.7 Summary
Feedback Bias Circuit (E-MOSFET)
D D DD GS
GS DS
RG
G
R I V V
V V
V
I
=
=
=
=
V 0
A 0
Electronic Devices and Circuit Theory
Boylestad
2013 by Pearson Higher Education, Inc
Upper Saddle River, New Jersey 07458 All Rights Reserved
Ch.7 Summary
Feedback Bias Q-Point (E-MOSFET)
Using these values from the
spec sheet, plot the transfer
curve:
V
GSTh
, I
D
= 0 A
V
GS(on)
, I
D(on)
Plot the line that is defined
by these two points:
V
GS
= V
DD
, I
D
= 0 A
I
D
= V
DD
/ R
D
, V
GS
= 0 V
Using the value of I
D
at the Q-point,
solve for the other variables in the
circuit
The Q-point is located where
the line and the transfer curve
intersect
Electronic Devices and Circuit Theory
Boylestad
2013 by Pearson Higher Education, Inc
Upper Saddle River, New Jersey 07458 All Rights Reserved
Ch.7 Summary
Voltage-Divider Biasing
Plot the line and the transfer
curve to find the Q-point using
these equations:
2 1
2
R R
V R
V
DD
G
+
=
) (
D S D DD DS
S D G GS
R R I V V
R I V V
+ =
=
Electronic Devices and Circuit Theory
Boylestad
2013 by Pearson Higher Education, Inc
Upper Saddle River, New Jersey 07458 All Rights Reserved
Ch.7 Summary
Voltage-Divider Bias Q-Point
(E-MOSFET)
Plot the line using
V
GS
= V
G
, I
D
= 0 A
I
D
= V
G
/ R
S
, V
GS
= 0 V

Using these values from the spec sheet, plot the transfer curve:
V
GSTh
, I
D
= 0 A
V
GS(on)
, I
D(on)

The point where the line and the transfer curve intersect is the Q-point.

Using the value of I
D
at the Q-point, solve for the other circuit values.
Electronic Devices and Circuit Theory
Boylestad
2013 by Pearson Higher Education, Inc
Upper Saddle River, New Jersey 07458 All Rights Reserved
Ch.7 Summary
p-Channel FETs
For p-channel FETs the same calculations and graphs
are used, except that the voltage polarities and current
directions are reversed.

The graphs are mirror images of the n-channel graphs.
Electronic Devices and Circuit Theory
Boylestad
2013 by Pearson Higher Education, Inc
Upper Saddle River, New Jersey 07458 All Rights Reserved
Ch.7 Summary
Applications
Voltage-controlled resistor
JFET voltmeter
Timer network
Fiber optic circuitry
MOSFET relay driver