Si4810BDY

New Product

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET with Schottky Diode

MOSFET PRODUCT SUMMARY
VDS (V)
30

FEATURES
ID (A)
10 8

rDS(on) (W)
0.0135 @ VGS = 10 V 0.020 @ VGS = 4.5 V

D TrenchFETr Power MOSFETS D Fast Switching Speed D Low Gate Charge

APPLICATIONS
D DC-DC Logic Level D Low Voltage and Battery Powered Applications

SCHOTTKY PRODUCT SUMMARY

VDS (V)
30

Diode Forward Voltage VSD (V)

0.53 V @ 3.0 A

IF (A)
3.8

SO-8
S S S G 1 2 3 4 Top View 8 7 6 5 D D D D N-Channel MOSFET S Ordering Information: Si4810BDY Si4810BDY-T1 (with Tape and Reel) G Schottky Diode

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter
Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150_C) (MOSFET)a Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (MOSFET)a Maximum Power Dissipation (Schottky)a Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C TJ, Tstg PD TA = 25_C TA = 70_C

Symbol
VDS VGS ID IDM IS IF IFM

10 sec
30 30 "20 10 8 50 2.3 3.8 40 2.5 1.6 2.0 1.3

Steady State

Unit
V

7.5 6 A 1.25 2.4 1.38 0.88 1.31 0.84 - 55 to 150 _C W

THERMAL RESISTANCE RATINGS

Parameter
Maximum Junction Junction-to-Ambient to Ambient (t v 10 sec)a

Device
MOSFET Schottky MOSFET

Symbol

Typical
36 44

Maximum
50 60 90 95 21 30

Unit

RthJA

73 77 17

M i Maximum Junction-to-Ambient J ti t A bi t (t = steady t d state) t t )a

Schottky MOSFET RthJF

_C/W

M i Maximum Junction-to-Foot J ti t F t (t = steady t d state) t t )a Notes a. Surface Mounted on FR4 Board.

Schottky

24

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 72229 S-31063Rev. A, 26-May-03 www.vishay.com

Si4810BDY
Vishay Siliconix
New Product

MOSFET + SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Static
Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V Zero Gate Voltage Drain Current (MOSFET + Schottky) On-State Drain Currenta Drain Source On-State Drain-Source On State Resistancea Forward Transconductancea Schottky Diode Forward Voltagea IDSS VDS = 24 V, VGS = 0 V, TJ = 100_C VDS = 24 V, VGS = 0 V, TJ = 125_C ID(on) rDS(on) gfs VSD VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 5 A VDS = 15 V, ID = 10 A IS = 3.0 A, VGS = 0 V IS = 3.0 A, VGS = 0 V, TJ = 125_C 20 0.0105 0.016 25 0.485 0.420 0.53 0.47 V 0.0135 0.020 W S 0.007 1.5 6.5 1 3 "100 0.100 10 20 A mA V nA

Symbol

Test Condition

Min

Typ

Max

Unit

Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistnce Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd RG td(on) tr td(off) tf trr IF = 3.0 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W VDS = 15 V, VGS = 5 V, ID = 10 A 14.5 6.3 4.7 0.55 17 13 45 15 36 30 20 90 25 70 ns W 22 nC

Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.

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Document Number: 72229 S-31063Rev. A, 26-May-03

Si4810BDY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50 VGS = 10 thru 5 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 50

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Transfer Characteristics

30 4V 20

30

20 TC = 125_C 10 25_C

10 3V 0 0 1 2 3 4 5

- 55_C 0 0 1 2 3 4 5

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.040 r DS(on) - On-Resistance ( W ) 2500

Capacitance

Ciss (MOSFET) C - Capacitance (pF) 0.032 2000

0.024 VGS = 4.5 V 0.016 VGS = 10 V

1500

1000

Coss (MOSFET + Schottky)

0.008

500

Crss (MOSFET)

0.000 0 10 20 30 40 50

0 0 4 8 12 16 20

ID - Drain Current (A)

VDS - Drain-to-Source Voltage (V)

Gate Charge
6 V GS - Gate-to-Source Voltage (V) r DS(on) - On-Resistance ( W ) (Normalized) VDS = 15 V ID = 10 A 1.6

On-Resistance vs. Junction Temperature

VGS = 10 V ID = 10 A 1.4

1.2

1.0

0.8

0 0 3 6 9 12 15 18 Qg - Total Gate Charge (nC)

0.6 - 50

- 25

25

50

75

100

125

150

TJ - Junction Temperature (_C)

Document Number: 72229 S-31063Rev. A, 26-May-03

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Si4810BDY
Vishay Siliconix
New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Source-Drain Diode Forward Voltage
50 0.06

On-Resistance vs. Gate-to-Source Voltage

10 TJ = 150_C TJ = 25_C

r DS(on) - On-Resistance ( W )

0.05

I S - Source Current (A)

0.04 ID = 9.0 A 0.03

0.02

0.01

0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V)

0.00 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V)

Reverse Current (Schottky)

30 10 40 I R - Reverse Curent (mA) 1 Power (W) 30 V 0.1 10 V 0.01 20 V 0.001 30 50

Single Pulse Power

20

10

0.0001

25

50

75

100

125

150

0 0.01 0.1 1 Time (sec) 10 100 1000

TJ - Temperature (_C)

Safe Operating Area, Junction-to-Case

100 Limited by rDS(on) 10 I D - Drain Current (A) 1 ms 1 10 ms 100 ms TC = 25_C Single Pulse 1s 10 s dc 0.01 0.1 1 10 100

0.1

VDS - Drain-to-Source Voltage (V)

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Document Number: 72229 S-31063Rev. A, 26-May-03

Si4810BDY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5

Vishay Siliconix

0.2
Notes:

0.1 0.1 0.05

t1 PDM

0.02

t2 1. Duty Cycle, D =

2. Per Unit Base = RthJA = 70_C/W

t1 t2

Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec)

3. TJM - TA = PDMZthJA(t) 4. Surface Mounted

10

100

600

Normalized Thermal Transient Impedance, Junction-to-Foot

2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5

0.2 0.1 0.1 0.05 0.02

Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10

Document Number: 72229 S-31063Rev. A, 26-May-03

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