CNG NGH VI MCH IN T

Phn L Thuyt
Tham kho mt s cu l thuyt http://www.wattpad.com/863378-cau-1-5
Cu 1:Khi nim IC l g? Phn loi mch tch hp?
Khi nim IC
Vi mch tch hp, hay vi mch, hay mch tch hp (integrated circuit, gi tt IC, cn gi l chip theo
thut ng ting Anh) l cc mch in t cha cc linh kin bn dn (nh transistor, diodes, ) v linh
kin in t th ng (nh in tr, ). Cc phn t c kt ni vi nhau nh cc vt liu kim loi (cc
vt liu kim loi ng vai tr nh cc wireless wires) c ph trn b mt ca chip. Vi mch c kch
thc c micrmt (hoc nh hn) ch to bi cng ngh silicon cho lnh vc in t hc.
Phn loi mch tch hp: C nhiu cch phn loi.
Phn loi theo tn hiu x l (hay theo bn cht ca tn hiu in vo, ra):
Cc mch tch hp v c bn c chia thnh 2 loi chnh:
+ Mch analog (hay linear)
Cc mch tch hp tng t hoc khuch i hoc p ng cc in p bin i. Tiu biu l cc mch
khuch i (amp), times, dao ng v cc mch iu khin in p (voltage regulators).
+ Mch digital (hay logic)
Cc mch s to ra hoc p ng cc tn hiu ch c hai mc in p. Tiu biu l cc b vi x l, cc b
nh, v cc vi iu khin.
Phn loi da trn quy trnh sn xut (hay theo cng ngh ch to):
Cc mch tch hp cng c th c phn loi theo cng ngh ch to:
+ IC mng (Film IC): Trn mt bng cht cch in dng cc lp mng to nn cc thnh phn khc.
Loi ny ch gm cc thnh phn th ng nh in tr, t in, v cun cm.
+ IC n tinh th (Monolithic IC) cn gi l IC bn dn (Semiconductor IC) l IC dng mt
(subtrate) bng cht bn dn thng l Si. Trn , ngi ta ch to transistor, diode, in tr, t in.
Ri dng cht cch in SiO
2
ph ln che ch cho cc b phn trn lp SiO
2
, dng mng kim loi
ni cc b phn vi nhau.
+ IC lai (Hybrid IC): Vi mch lai l s kt hp ca 2 loi vi mch trn. Mch lai c th bao gm nhiu
tinh th monolithic c ghp ni vi nhau thnh mt khi, n cng c th l s kt hp gia mch
monolithic vi mch mng mng th ng. i khi cc IC monolithic, IC mng mng/ mng dy c
kt hp vi cc phn t bn dn thc hin cc chc nng ring. Cc transistor v diode gn trong mch
lai khng cn c v hay ring, m ch cn c bo v bng mt lp men trng.
Phn loi theo mt tch hp: SSI, MSI, LSI. VLSI

Cu 2: Cht bn dn l g? C my kiu ht dn c bn v ch ra cch c c cc loi ht dn ?
Cht bn dn (ting Anh: Semiconductor) l vt liu trung gian gia cht dn in v cht cch
in. Cht bn dn hot ng nh mt cht cch in nhit thp v c tnh dn in nhit
phng. Gi l "bn dn" (ch "bn" theo ngha Hn Vit c ngha l mt na), c ngha l c
th dn in mt iu kin no , hoc mt iu kin khc s khng dn in.
l cc cht Germanium (Ge) v Silicium (Si).
==> Cht bn dn l cht c dn in c th iu khin c, trong khong trung gian gia in mi
v kim loi.
C 2 kiu ht dn c bn: ht c bn (majority carrier)
+Cht bn dn loi P: c tp cht l cc nguyn t thuc nhm III hay tp acceptor, dn in ch yu
bng cc l trng.Ngc li khi ta pha thm mt lng nh cht c ho tr 3 nh Indium (In) vo cht bn
dn Si th 1 nguyn t Indium s lin kt vi 4 nguyn t Si theo lin kt cng ho tr v lin kt b thiu
mt in t => tr thnh l trng ( mang in dng) v c gi l cht bn dn P.

Cht bn dn P
+ Cht bn dn loi N: c tp cht l cc nguyn t thuc nhm V hay tp donor, cc nguyn t ny
dng 4 electron to lin kt v mt electron lp ngoi lin kt lng lo vi nhn, y chnh l cc electron
dn chnh. Khi ta pha mt lng nh cht c ho tr 5 nh Phospho (P) vo cht bn dn Si th mt
nguyn t P lin kt vi 4 nguyn t Si theo lin kt cng ho tr, nguyn t Phospho ch c 4 in t
tham gia lin kt v cn d mt in t v tr thnh in t t do => Cht bn dn lc ny tr thnh tha
in t ( mang in m) v c gi l bn dn N ( Negative : m ).

Cht bn dn N
Cu 3 : Trnh by cc khi nim : CMOS, MOSFET v MESFET ?
Cng ngh MOS (Metal Oxide Semiconductor-kim loi oxit bn dn) c tn gi xut x t cu trc
MOS c bn ca mt in cc nm trn lp oxit cch nhit, di lp oxit l bn dn.

CMOS, vit tt ca "Complementary Metal-Oxide-Semiconductor" trong ting Anh, l thut
ng ch mt loi cng ngh dng ch to vi mch tch hp. Cng ngh CMOS c dng
ch to vi x l, vi iu khin, RAM tnh v cc mch lgc s khc. Cng ngh CMOS cng
c dng rt nhiu trong cc mch tng t nhcm bin hnh nh, chuyn i kiu d liu, v
cc vi mch thu pht c mt tch hp cao trong lnh vc thng tin.
Cu to CMOS

CMOS (Complementary MOS) c cu to kt hp c PMOS v NMOS trong cng 1 mch nh
tn dng c cc th mnh ca c 2 loi, ni chung l nhanh hn ng thi mt mt nng lng
cn thp hn so vi khi dng ri tng loi mt. Cu to c bn nht ca CMOS cng l mt cng
NOT gm mt transistor NMOS v mt transistor PMOS nh hnh 1.65


Hot ng ca mch cng tng t nh NMOS
Khi ng vo (ni chung cc cng 2 transistor) cao th ch c Q1 dn mnh do p ra ly t
im chung ca 2 cc mng ca 2 transistor s xp x 0V nn ng ra thp.
Khi ng vo thp Q1 s ngt cn Q2 dn mnh, p ra xp x ngun, tc ng ra mc cao.
l khc vi cng NOT ca NMOS, y 2 transistor khng dn cng mt lc nn khng c
dng in t ngun qua 2 transistor xung mass nh cng sut tiu tn gn nh bng 0. Tuy
nhin khi 2 transistor ang chuyn mch v khi c ti th s c dng in chy qua mt hay c 2
transistor nn khi ny cng sut tiu tn li tng ln.
Trn nguyn tc cng o, cng ging nh trc bng cch mc song song hay ni tip thm
transistor ta c th thc hin c cc cng logic khc (hnh 1.66). Chng hn mc chng 2
NMOS v mc song song 2 PMOS ta c cng NAND. Cn khi mc chng 2 PMOS v mc
song song 2 NMOS ta c cng NOR.

MOSFET
MOSFET, vit tt ca "Metal-Oxide Semiconductor Field-Effect Transistor" trong ting Anh,
c ngha l "transistor hiu ng trng Oxit Kim loi - Bn dn", l mt thut ng ch
cc transistor hiu ng trng c s dng rt ph bin trong cc mch s v cc mch tng t.
Transistor MOSFET c xy dng da trn lp chuyn tip Oxit Kim loi v bn dn ( v d
Oxit Bc v bn dn Silic)
MOSFET c hai loi:
N-MOSFET: ch hot ng khi ngun in Input (Gate) l zero, cc electron bn trong vn tin
hnh hot ng cho n khi b nh hng bi ngun in Input.
P-MOSFET: cc electron s b cut-off cho n khi gia tng ngun in th vo ng Input (Gate)
Thng thng cht bn dn c chn lsilc nhng c mt s hng vn sn xut cc vi mch bn
dn t hn hp ca silc v germani (SiGe), v d nh hng IBM. Ngoi silc v germani cn c
mt s cht bn dn khc nh gali asenua c c tnh in tt hn nhng li khng th to nn cc
lp oxide ph hp nn khng th dng ch to cc transistor MOSFET.
Transistor trong cng ngh MOS l transistor hiu ng trng, gi l MOSFET (metal oxide
silicon field effect transistor). C ngha in trng pha in cc kim loi ca lp oxit cch
nhit c nh hng n in tr ca . Phn nhiu IC s MOS c thit k ht bng MOSFET,
khng cn n linh kin no khc.
Hot ng ca MOSFET c th c chia thnh ba ch khc nhau ty thuc vo in p trn
cc u cui. Vi transistor NMOSFET th ba ch l:
- Ch cut-off hay sub-threshold (Ch di ngng ti hn).
- Triode hay vng tuyn tnh.
- Bo ho.
Trong cc mch s th cc tranzito ch hot ng trong ch cut-off v triode. Ch bo ha
ch yu c dng trong cc ng dng mch tng t.


MESFET
MESFET l vit tt ca MetalSemiconductor Field Effect Transistor. N kh ging vi
mt JFET . S khc bit l thay v s dng mt ng giao nhau p-n cho mt ca,
mt Schottky ( kim loi - bn dn ) ni c s dng. MESFETs thng c xy dng trong
cng ngh bn dn hp cht thiu th ng b mt cht lng cao nh GaAs , InP , hoc SiC , v
nhanh hn nhng t hn silicon JFETs hoc MOSFETs . MESFETs sn xut ang hot ng ln
n khong 45 GHz, v thng c s dng cho l vi sngtn s thng tin lin lc v radar . Cc
MESFETs u tin c pht trin vo nm 1966, v mt nm sau h tn s cc cao RF hiu
sut l vi sng c chng minh. T mt k thut s thit k mch quan im, cng ngy cng
kh khn s dng MESFETs lm c s cho k thut s mch tch hp nh quy m ca hi
nhp tng ln, so vi CMOS silicon da trn ch to.
Cu trc MOS cho GaAs rt kh ch to nn cu trc MESFET l cu trc c s cho IC
trn c s GaAs. Cu trc MESFET c tc cao, mt tch hp cao v rng vng cm
ln (do in tr ln).


MESFET


Cu 4 : Trnh by quy trnh cc bc ch to ra IC t thi Silic n tinh th ?
S LC V QUI TRNH CH TO MT IC N TINH TH.
Cc giai on ch to mt IC n tinh th c thnh phn tc ng l BJT, c n gin ha gm cc
bc sau:
-Bc 1:0.15mm25 75mmn - SiNn P-Si0.025mm0.15mmn - SiNn P-Si0.5
a. T mt nn P-Si (hoc n-Si) n tinh th
b. To mt lp epitaxy mng loi N-Si
c. Ph mt lp cch in SiO2
-Bc 2:
Dng phng php quang khc kh lp SiO2 mt s ch nht nh, to ra cc ca s b mt tinh
th. T cc ca s, c th khuch tn tp cht vo.
a.u tin, v s nhng ni cn m ca s, chp hnh s ri ly phim m bn, thu nh li. Nhng
ni cn m ca s l vng ti trn phim
P-SifilmuvCht cm quangSiO2n-SiP-SiCht cm quangSiO2n-SiHa tanRn liP-SiSiO2n-SiHa
tanThnPnnSiO2Khuch tn poNnPnnSiO2Khuch tn BaseppNnPnnSiO2Khuch tn
EmitterppnnHnh 2a. Bi mt lp cn quang trn b mt. t phim trn ri tia cc tm vo nhng ni
cn m ca s c lp en trn phim bo v. Nhng tinh th vo dung dch tricloetylen. Ch nhng ni
cn m ca s lp cn quang mi b ha tan, cc ni khc rn li.
b.Li em tinh th nhng vo dung dch fluorhydric. Ch nhng ni cn m ca s lp SiO2 b ha tan,
nhng ni khc nh lp cn quang che ch.
c. em ty lp cn quang
d. Khuch tn cht bn dn P su n thn, to ra cc o N.
e. Li m ca s, khuch tn cht bn dn P vo cc o N (khuch tn Base)
f. Li m ca s, khuch tn cht bn dn N vo (khuch tn Emitter)
g. Ph kim loi. Thc hin cc ch ni




Cu 5 : Cho Wafer l loi p ch ra cc bc ch to linh kin CMOS cng NOT ?
Bt u vi mt ming bn dn th.
Ch to cng o NOT t phn y ln.
+ Bc 1: Bc u tin l to ra mt lp bn dn giu n
+ Bc 2: Ph ln ming bn dn mt lp SiO
2
(oxide)
+ Bc 3: B i lp oxide ni cn to bn dn giu n
+ Bc 4: a trc tip hoc khuch tn cht kch thch tp loi n vo lp bn dn l ra
+ Bc 5: Ph lp SiO
2

Cu 6 : n mn l g ? ngha ca n mn trong cng ngh ch to vi mch in t ?
n mn trong cng ngh vi in t trn c s silicon l mt k thut rt hay c s dng. C 2
phng php n mn chnh l : n mn t v n mn kh.
Sau khi hnh dng ca lp cn quang c hnh thnh, lp cn quang cn li c th c dng
nh mt mt n, v th vt liu khng b ph bi lp cn quang s b n mn. Nu lp cn quang
c t vo b mt ca silic ioxit th silic ioxit cng c th b n mn theo cch tng t.
ngha ca n mn trong cng ngh ch to vi mch in t
- Nh k thut ny m chng ta c th mang li k thut n mn vt liu vi h s t l d/w
(su/cao) rt ln.
- Vi k thut ny cc hng sn xut ln c th phn on thit b dnh ring cho qu trnh n
mn nng vi mt vi micromet chiu su cho ti thit b c th n mn qua tm silicon (c
400 micromet) ch trong hai gi.
Cu 7 : So snh gia cc cng ngh PMOS, NMOS, v CMOS ?
Cng ngh n cc MOS vi c im :
D ch to v quy trnh thc hin n v t cng on hn cng ngh lng cc do vy gi thnh
r.
Mt tch hp cao v transistor n cc nh v kch thc v tiu th rt t in nng.
Cng sut tiu th nh.
So snh gia cc cng ngh PMOS, NMOS, v CMOS:
PMOS (dng MOSFET knh P) c tn s lm vic nh (khong 1 MHz) ; mt tch hp ln,
cng sut tiu thu nh, d ch to. Tuy nhin, h pMOS li khng tng hp vi TTL i hi
nhiu in p ngun nui khc nhau.
NMOS (dng MOSFET knh N tng cng) c mt ng gi gn gp i PMOS ; v NMOS
cng nhanh gn gp 2 ln PMOS , tc dch chuyn cao hn PMOS hng chc ln. NMOS ni
chung l tng hp vi TTL ch cn mt ngun nui duy nht trong nhiu trng hp. Cc ci
tin ca h NMOS nh HMOS, XMOS, VMOS c mt tch hp cao hn cng sut tiu th t
hn, tn s lm vic ln hn.
CMOS (MOS b dng c 2 thit b knh P v knh N) li rt tin cy v ngng i trng thi logic
bng khong in p nui. Tuy nhin tn s lm vic v mc tch hp c phn no b hn ch so
vi NMOS.
CMOS rc ri nht v c mt ng gi thp nht trong cc h MOS, nhng n c im mnh
l tc cao hn v cng sut tiu th thp hn.
PMOS v NMOS c mt ng gi ln hn (nhiu transistor trong 1 chip hn) v do kinh t
hn CMOS.
IC NMOS v IC CMOS c dng rng ri trong lnh vc k thut s.
IC PMOS khng cn gp mt trong cc thit k mi na. Tuy nhin MOSFET knh p vn rt
quan trng bi v chng c dng trong mch CMOS.
Cu 8 : Quang khc l g ? Trnh by vai tr ca quang khc trong qu trnh ch to IC ?
Quang khc hay photolithography l k thut s dng trong cng ngh bn dn v cng ngh vt
liu nhm to ra cc chi tit ca vt liu v linh kin vi hnh dng v kch thc xc nh bng cch s
dng bc x nh sng lm bin i cc cht cm quang ph trn b mt to ra hnh nh cn to.
Phng php ny c s dng ph bin trong cng nghip bn dn v vi in t, nhng khng cho
php to cc chi tit nh do hn ch ca nhiu x nh sng, nn c gi l quang khc micro (micro
lithography). Mt s sch gio khoa Vit Nam cn dch thut ng photolithography l quang bn
thch.
K thut quang khc


Cc phng php to chi tit trong quang khc: k thut liff-off (tri), k thut n mn (phi)
Quang khc l tp hp cc qu trnh quang ha nhm thu c cc phn t trn b mt ca c hnh
dng v kch thc xc nh. C ngha l quang khc s dng cc phn ng quang ha to hnh.
B mt ca sau khi x l b mt c ph mt hp cht hu c gi l cht cn quang (photoresist),
c tnh cht nhy quang (tc l tnh cht b thay i khi chiu cc bc x thch hp), ng thi li bn
trong cc mi trng kim hay axit. Cn quang c vai tr bo v cc chi tit ca vt liu khi b n mn
di cc tc dng ca n mn hoc to ra cc khe rnh c hnh dng ca cc chi tit cn ch to. Cn
quang thng c ph ln b mt tm bng k thut quay ph (spin-coating).

Cn quang c phn lm 2 loi
Cn quang dng: L cn quang c tnh cht bin i sau khi nh sng chiu vo s b ha tan
trong cc dung dch trng ra.
Cn quang m: L cn quang c tnh cht bin i sau khi nh sng chiu vo th khng b ha tan
trong cc dung dch trng ra.
Nguyn l h quang khc

Nguyn l h quang khc
Mt h quang khc bao gm mt ngun pht tia t ngoi, chm tia t ngoi ny c khuch
i ri sau chiu qua mt mt n (photomask). Mt n l mt tm chn sng c in trn
cc chi tit cn to (che sng) che khng cho nh sng chiu vo vng cm quang, to ra
hnh nh ca chi tit cn to trn cm quang bin i. Sau khi chiu qua mt n, bng ca chm
sng s c hnh dng ca chi tit cn to, sau n c hi t trn b mt phin ph cm
quang nh mt h thu knh hi t.
ng dng ca quang khc
Quang khc l k thut c pht trin t u th k 20, v c s dng rng ri nht trong
cng nghip bn dn ch to cc vi mch in t trn cc phin Si. Ngoi ra, quang khc
c s dng trong ngnh khoa hc v cng ngh vt liu ch to cc chi tit vt liu nh,
ch to cc linh kin vi c in t (MEMS). Hn ch ca quang khc l do nh sng b nhiu x
nn khng th hi t chm sng xung kch c qu nh, v th nn khng th ch to cc chi tit
c kch thc nano ( phn gii ca thit b quang khc tt nht l 50 nm), do khi ch to
cc chi tit nh cp nanomet, ngi ta phi thay bng cng ngh quang khc chm in
t (electron beam lithography).












Cu 9 : Khuch tn l g ? Trnh by vai tr ca khuch tn trong qu trnh ch to IC ?
Khuch tn l k thut c s dng trong cng ngh bn dn ch to cc vng chuyn tip
ca transistor. C nhiu phng php khuch tn to vng chuyn tip P-N khc nhau nh
phng php khuch tn nhit cao, phng php cy ion Tu thuc vo silicon v mc
ch ca vic pha tp ngi lm cng ngh s phi dng hai loi tp ph bin nht l Boron (B)
hoc phtpho (P) cho qu trnh ny.
Qu trnh nhit c dng rng ri trong ch to IC l khuch tn. Khuch tn l mt qu trnh m
qua nhng loi nguyn t tp cht c bit c th c a vo trong vt liu silic.
Vai tr ca khuch tn trong qu trnh ch to IC
Qu trnh khuch tn pha tp ny lm thay i tnh cht in ca silic v hnh thnh nn tip xc
p-n (Tip xc p-n l thnh phn c bn ca thit b bn dn.) Ming silic b oxi ha hnh thnh
ioxit silic v nhng ca s nh c m trong oxit trong nhng vng c chn la dng k
thut quang khc v n mn .
Cu 10 : Trnh by vai tr ca quy trnh oxi ho trong qu trnh ch to IC ?
Qu trnh oxy ha (Oxidation) trong cng ngh ch to IC c vai tr:
-L qu trnh oxide ha to thnh cc lp cch in , loi b s nh hng ca cc
thnh phn in t gn nhau : nh gia cc mosfet gn nhau hay l gia lp vi lp
poly silicon .
- Oxi ho c tc dng bo v b mt cc linh kin bn dn di tc dng ca mi trng
bn ngoi, che chn b mt Si trong qu trnh khuch tn n x cc tp cht nh P v B.
Cu 11 : OxitSilic SiO
2
c vai tr nh th no trong cng nghip ch to IC ?
- Lp SiO
2
c s dng lm cc (gate) ca cho bng bn dn (transistor). Lp SiO
2
ny
c h s dn n nhit gn bng h s gin n nhit ca Si, vi hng s in mi.
-Lp cch in mng bng ixt Silic (SiO2) ng vai tr ngn cch in cc cng ca
transistor khi cc mng, ni s c dng in chy qua khi transistor c bt ln.
Cu 12 : Trnh by vai tr v phng php nui thi Silic n tinh th ?
Vai tr nui thi Silic n tinh th:
- chuyn ho cu trc a tinh th v n tinh th.
- Loi b cc tp cht khng mong mun.
- Trong qu trnh nui cc tp cht c th c a vo to ra n tinh th bn
dn loi n hoc p.


Phng php nui thi Silic n tinh th: C 3 phng php nui t Si EGS.
- PP Czochralski (Nui bng cch un)
K thut thng thng nui tinh th c gi l phng php Czochralski. Trong k thut ny, mt
ming nh vt liu bn dn c gi l mm c mang n tip xc vi b mt ca mt vt liu ging
n pha lng, v sau c ko chm t th lng. Khi mm c ko chm, s ha rn xut hin gia
lp tip xc lng-rn. Thng thng tinh th cng c quay chm khi n ang c ko trn lng,
dn n nhit ng u hn. Nhng nguyn t tp cht, chng hn nh Bo hoc Photpho c th c
thm vo bn dn ang tan chy.
Mt ht tinh th mm c nhng trong Si EGS nng chy, v tinh th mm s c ko gradual sao cho
thi n tinh th c ng knh 15cm trong qu trnh lm ngui.
- PP nng chy vng: Mt thi Si c t theo phng thng ng c lm nng chy cc b t di
ln. Vng nng chy c ti tinh th ho nh cc tinh th mm.
- PP Bridgeman: Dng ch yu cho GaAs. Trong vt liu a tinh th c lm nng chy dc theo
thuyn hp v nh l qut dc v c lm ngui t mt pha c gn vi tinh th mm.
Cu 13 : ngha ca phng sch trong cng ngh ch to vi mch in t ?
Mt phng sch hay cn phng sch s l mt mi trng, thng c s dng trong sn xut hoc
nghin cu khoa hc, c trnh thp ca mi trng nhim nh bi, khng kh vi trng , phun ht v
hi ha cht. Chnh xc hn, mt phng sch c kim sot mc nhim c xc nh bi s lng
ca cc ht trong mt mt khi ti mt kch thc ht c ch nh. cung cp cho quan im, khng
kh xung quanh bn ngoi trong mt mi trng th in hnh cha 35.000.000 ht trong mt mt khi
trong phm vi kch thc 0,5 mm v ng knh ln hn, tng ng vi mt tiu chun ISO 9 phng
sch, trong khi mt tiu chun ISO 1 phng sch cho php khng c cc ht trong phm vi kch thc
v ch c 12 ht trong mt mt khi 0,3 mm v nh hn.




Ch to microchip
[nh ngha
Sn xut chip l mt qu trnh c thc hin trong nhng nh my tr gi hng t la chuyn nhng hat
ct tm thng thnh cc b vi x l, chip nh v mch tch hp dng trong hu ht mi th. y mt trong
nhng ngnh cng nghip phc tp nht, i hi chnh xc cao nht v cng t tin nht. uy nhin, cc
nh sn xut vn tip tc tng gp i kh nng ca chip sau mi -2 thng.
Silic l mt cht bn dn t nhin. rong mt vi iu kin, n tr nn dn in trong mt s iu kin khc n
li tr thnh cch in. c tnh dn in ca silic c th thay i tu theo vic b sung cht ph gia (tp cht),
qu trnh ny c gi l kch tp. Nhng c im ny lm cho n tr thnh vt liu l tng cho vic ch to
transitor l nhng thit b n gin khuych i tn hiu in. ransitor cng c th hot ng nh nhng b
chuyn mch - thit b ngm dng trong t hp biu din ton t lun l Boole nh and, or, not.

Quy Trnh
CP C C O trong nhng nh my thng c gi bng ting nh l fab. ab nu chy v tinh ch ct
sn xut nhng thi silic tinh th n tinh khit n mc ,. Nhng thi ny c ca mng thnh nhng
a bn dn (wafer) vi ng knh khong 5-7cm. Nhng a ny c lm sch v nh bng, sau mi a
s c dng ch to nhiu con chip. Nhng bc ny v nhng bc tip theo c thc hin trong mi
trng sch, ni c cc yu cu v chng nhim bi v cc cht ngoi lai khc ht sc nghim ngt.
Mt lp khng dn in l silic dioxit c ph ln b mt ca a silic ny, lp ny li c bao bng mt loi
ho cht cm quang c gi l quang tr.
Lp quang tr ny s c phi sng bng cch chiu tia cc tm qua mt tm khun hay cn gi l mt n
(mask) lm cng nhng phn l sng. Nhng phn khng l sng s c c b bng kh nng lm l
lp nn silic dioxit bn di. Lp nn v lp silicon tip tc c khc theo nhng su khc nhau.
Lp quang tr c lm cng bng qu trnh in li t ny (tng t nh phi bn km nh in) sau c
loi b, cho ta cu trc chiu trn chip - sao y bn chnh ca thit k mch trn mt n. nh cht dn in ca
mt s thnh phn trn chip c th c bin i qua qu trnh kch tp bng ha cht trong iu kin nhit v p
sut. Qu trnh in li t c tin hnh vi nhiu mt n khc nhau, sau thc hin nhiu qu trnh khc v kch
tp, c th lp li hn hng trm ln trn cng mt con chip, to ra mch tch hp ngy cng phc tp hn tai mi
bc.
to mch dn gia cc thnh phn c khc vo chip, ton b chip s c ph bng mt lp kim loi mng
- thng bng nhm - v qu trnh in li t, khc li c p dng mt ln na to cc ng dn cn thit. Nu
cn, ngi ta thit k thm nhng lp dn in c tch bit bng nhng b cch in thy tinh.
Mi chip trn a bn dn c kim tra cht lng v sau c ca tch ra. Nhng chip bo m cht lng
c ng gi theo phng thc ring c th gn vo cc loi bo mch, chip hng c nh du v loi b.
Hin nay cc cng ty sn xut chip thng mua wafer lm sn. Wafer c nhiu kch c khc nhau, thng th c ng knh 5
inch, 8 inch v 12 inch. Wafer l mt bn mch mng hnh trn c lm t cht bn dn (Silicon). Bng cc giai on x l
khc nhau trong phng sch (clean room) ngi ta to ra rt nhiu chip trn mt wafer.
Cc qu trnh x l wafer
Tt c c thc hin trong mi trng siu sch (ultra clean room).

Ra (wet process): y l bc lm sch wafer bng cc dung dch ha hc. V d APM (hn hp NH4OH/H2O2/H2O) dng
lm sch cc particle nh bi trong khng kh, bi t ngi bay ra; HPM (hn hp Cl/H2O2/H2O) dng lm sch cc tp
chp v kim loi him (Cu, Au, Pt...); HPM (hn hp H2SO4/H2O2) lm sch cc tp cht hu c (resist) v kim loi (Ze,
Fe...); DHF (axit HF long) dng loi b cc phn SiO2 khng cn thit.

-xi ha (Oxidation): to SiO2 trn b mt wafer trong lp SiO2 mng c 1 ti 2 nanomet s tr thnh gate ca transistor.
Check: cu to v nguyn l hot ng ca MOSFET, ITRS (international technology roadmap for semiconductor), LOCOS
(local oxidation of silicon), STI (swallow trench isolation)

CVD (Chemical Vapor Deposition): to cc lp film mng trn b mt wafer bng phng php ha hc (SiO2, Si3N4. Poly-
Si, WSi2). V d c th dng CVD p sut thp trong mi trng SiH4 v H2 to ra lp poly-Si (Si a tinh th) lm
in cc cho transistor.

Cy Ion (Ion implantation): S dng cc ngun ion nng lng cao (vi chc ti vi trm keV, nng c 2E-15 cm-3) bn
trc tip ln b mt Si nhm thay i nng tp cht trong Si. V d bn cc ion As to ra vng n+ lm source v drain
cho MOSFET.

Ct (etching): loi b cc phn SiO2 khng cn thit. C hai loi: wet-etching dng axit HF long ha tan SiO2; dry-
etching dng plasma ct SiO2 khi b mt Si. Check: high-density plasma etching, RIE (Reactive Ion Etching), HF, etching

Photolithography: phng php x l quang hc transfer mask pattern ln b mt wafer. Wafer s c pht mt lp dung
dch gi l resist, dy ca lp ny khong 0.5um. nh sng s c chiu ln mask, phn nh sng i qua s lm mm
resist. Sau khi ra bng dung dch c bit (ging trng nh), phn resist khng b nh sng chiu vo s tn ti trn wafer nh
l mask. (trong trng hp ny resist l loi positive).

Sputtering: L phng php ph cc nguyn t kim loi (Al, Cu) ln b mt wafer. Ion Ar+ vi nng lng khong 1 keV
trong mi trng plasma s bn ph cc target kim loi (Al, W, Cu), cc nguyn t kim loi s bt ra bm ln b mt wafer.
Phn b ph s tr thnh dy dn ni cc transistor vi nhau.

Annealing: X l nhit gip cho cc lin kt cha hon chnh ca Si (b damaged bi ion implantation etc.) s to lin kt vi
H+. Vic ny c tc dng lm gim cc trap nng lng ti b mt Si v SiO2. CMP (Chemical Mechanical Polishing): Lm
phng b mt bng phng php c-ha. y l k thut mi c p dng vo semiconductor process. C tc dng h tr
thm cho cc x l nh photolithography, etching,...

Kim tra - ng gi - Xut xng
Cc x l phn 3 s c lp i lp li nhiu ln ty thuc vo mc phc tp ca chip. Cui cng chip s c ct ri
(mt tm wafer 300mm c th to c khong 90 con chip Pentium IV). Mt lot cc x l khc nh back grinding (mi
mng phn mt di ca chip), bonding (ni ra cc pins, dng ch m vng hoc ng), mold (ph lp cch in), marking
(ghi tn hng sn xut,...).




Phn Bi Tp
L thuyt cho phn bi tp
Ch : v (AND) ni tip, hoc (OR) song song
0=pMOS, 1= nMOS
Cc h thc c bn v h qu trong i s logic
A + 0 = A; A+1= 1 A.1=A; A.0=0
A + A = A ; A + B = B+A A.A= A; A. =0; A.B=B.A
A +AB = A A.(A + B) =A
AB + A = A (A + B).(A + ) =A
nh l Demoorgan =. ; = +
Mch CMOS Thit k v layout
Cu trc CMOS
Complementy CMOS logic gates
nMOS pull-down network
pMOS pull0up network
a.k.a static CMOS
Serier and parallel
nMOS: 1=ON
pMOS: 0=ON
Series: both must be ON
Parallel: either can be ON
mnh yu ca tn hiu:
mnh ca tn hiu: cho bit tn hiu gn bng hay cch xa cc ngun p l tng.
VDD v GND l cc tn hiu 1 v 0 mnh nht.
nMOS cho qua tn hiu 0 mnh nhng lm yu tn hiu 1.
pMOS cho qua tn hiu 1 mnh nhng lm yu tn hiu 0.
Do nMOS thch hp nht cho mng ko xung (pull-down network)
ng dng ca transistor:
Cc transistor c th dng nh cc cng tc.
Cc cng loi trn cho ra tn hiu yu.
Cc cng sau cho tn hiu tt hn.



Thit k vt l c bn cc cng logic n gin
Cng NOT- O
Cng NOR
Cng NAND
Cng XOR AB =A. + .B
Cng NAND 3 ng vo
Cc cng 3 trng thi
Cng 3 trng thi hi phc v khng hi phc
Cc mch dn knh:
- MUX : B MUX khng hi phc s dng 6 transistor.
- B MUX o: S dng mch t hp AOI22 (Add-Or-Invert). Hoc mt cp cng 3 o trng
thi. L b dn knh khng o ghp vi cng o.
B chn knh:
- Chn 1 trong 4 ng vo da trn 2 ng iu khin.
- Gm 2 tng ghp knh 2: 1 hoc 4 cng 3 trng thi.
To cht D:
- Cn gi l cht trong sut (transparent latch) hay cht nhy mc (level-sensitive latch)
- Khi CLK=1, cht c gi l trong sut (transparent): D thong ti Q nh mt b m
- Khi CLK=0, cht c gi l m c (opaque): Q gi nguyn gi tr ca n khng ph thuc
vo D.
- D-Flip-Flop:
+ Khi CLK chuyn t 0 ln 1, gi tr ca D c chuyn cho Q.
+ cc thi im khc, Q gi nguyn gi tr c.
+ Cn gi l flip-flop kch canh ln, flip-flop ch t.
Layout cng logic
- Chip c xc nh bi tp hp cc mt n
- Cc kch thc ti thiu ca mt n s xc nh c kch thc transistor (v do xc nh
tc , gi thnh v cng sut)
- Kch thc c trng f= khong cch gia ngun v mng
- c quy nh bi chiu rng ti thiu ca polysilicon
- Kch thc c trng ny c ci thin 30% sau mi 3 nm
Cc quy tc thit k n gin ho
- Gate layout:
+ Layout c th tn rt nhiu thi gian
+ Thit k cc cng sao cho va kht vi nhau: xy dng mt th vin cc cell chun, phng
php thit k cell chun
+ VDD v GND l cc bin gii (chiu cao chun): Cc cng k nhau phi tun th cc lut
thit k
+ nMOS di v pMOS trn
+ Tt c cc cng phi bao gm cc tip xc nn v giu



I) V mch nguyn l v layout cho mch v hm cho cc bi tp di.
Layout cho cng o:
- Kch thc ca transistor c nh ngha bi cp thong s chiu rng/ chiu di
- Kch thc ti thiu l 4/2, cn gi l kch thc n v (unit)
- Vi quy trnh c f=0,6 m, kch thc ny bng 1,2 m rng, 0,6 m di
II) c lng din tch cho thit k ? (tnh theo )
c lng din tch bng cch m s wiring track. Nhn cho 8 biu din theo .
III) Cc bi tp:
1) And, or 2 ng vo
2) Nand, nor 2 ng vo
3) And, nand 2 ng vo
4) And, nand 3 ng vo
Cng NAND 3: Cc di khuch tn N- diffusion v p- diffusion nm ngang.Cc cng polysilicon
theo chiu dc. Metal 1 VDD trn, Metal 1 GND di. Kch thc 32 x40
5) Or, nor 3 ng vo
6) Demux 2 vo 4 ra
7) Hm f= ( )
Kch thc (5 tracks= 40) x (6 tracks =48)
8) Hm f=
9) Hm f=
10) Hm f= ( ) ( )
11) Hm f=
12) Hm f=
13) Hm f=
14) Bi kim tra th nht:
a) F= A+ B

b) F= A+B+C+D
c) F=