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Vishay Siliconix
rDS(on) (W)
0.080 @ VGS = 10 V 0.100 @ VGS = 4.5 V
ID (A)
"3.7 "3.4
D1
D1
D2
D2
SO-8
S1 G1 S2 G2 1 2 3 4 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
Limit
60 "20 "3.7 "3.2 25 2 2.4
Unit
V
W 1.7 55 to 175 _C
Symbol
Typ
Max
62.5
Unit
_C/W
2-1
Si9945AEY
Vishay Siliconix
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 2.0 A, di/dt = 100 A/ms VDD = 30 V V, , RL = 30 W ID ^ 1 A, A VGEN = 10 V V, RG = 6 W VDS = 30 V, V VGS = 10 V V, ID = 3.7 37 A 11 2 2 9 10 21 8 45 20 20 40 20 80 ns 20 nC C
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
2-2
Si9945AEY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
25 VGS = 10 through 5 V 20 I D Drain Current (A) 4V I D Drain Current (A) 20 25_C 150_C 15 25 TC = 55_C
Transfer Characteristics
15
10 3V 5
10
Capacitance
r DS(on) On-Resistance ( W )
0.16 600 0.12 VGS = 4.5 V 0.08 VGS = 10 V C Capacitance (pF) Ciss
400
0.04
10
Gate Charge
2.4
VDS = 30 V ID = 3.7 A
2.0
VGS = 10 V ID = 3.7 A
1.6
1.2
0.8
0.4
0 0 2 4 6 8 10
0 50
25
25
50
75
100
125
150
175
2-3
Si9945AEY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
30
10 TJ = 175_C
r DS(on) On-Resistance ( W )
0.16
0.12
TJ = 25_C
0 0 2 4 6 8 10
Threshold Voltage
0.6 120
90
60
0.3
30 0.6
0.9 50
25
25
50
75
100
125
150
175
0 0.001
0.01
0.1
1 Time (sec)
10
100
1000
TJ Temperature (_C)
10+2
10+3
2-4