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Si9945AEY

Vishay Siliconix

Dual N-Channel 60-V (D-S), 175_C MOSFET


PRODUCT SUMMARY
VDS (V)
60

rDS(on) (W)
0.080 @ VGS = 10 V 0.100 @ VGS = 4.5 V

ID (A)
"3.7 "3.4

D1

D1

D2

D2

SO-8
S1 G1 S2 G2 1 2 3 4 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C

Symbol
VDS VGS ID IDM IS PD TJ, Tstg

Limit
60 "20 "3.7 "3.2 25 2 2.4

Unit
V

W 1.7 55 to 175 _C

THERMAL RESISTANCE RATINGS


Parameter
t v 10 sec Junction-to-Ambienta Steady State Notes a. Surface Mounted on 1 x 1 FR4 Board For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70758 S-57253Rev. C, 24-Feb-98 www.vishay.com S FaxBack 408-970-5600 RthJA 93

Symbol

Typ

Max
62.5

Unit
_C/W

2-1

Si9945AEY
Vishay Siliconix

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)


Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 3.7 A VGS = 4.5 V, ID = 3.4 A VDS = 15 V, ID = 3.7 A IS = 2.0 A, VGS = 0 V 20 0.06 0.075 11 1.2 0.080 0.100 1.0 "100 1 10 V nA mA A W S V

Symbol

Test Condition

Min

Typ

Max

Unit

Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 2.0 A, di/dt = 100 A/ms VDD = 30 V V, , RL = 30 W ID ^ 1 A, A VGEN = 10 V V, RG = 6 W VDS = 30 V, V VGS = 10 V V, ID = 3.7 37 A 11 2 2 9 10 21 8 45 20 20 40 20 80 ns 20 nC C

Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.

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2-2

Document Number: 70758 S-57253Rev. C, 24-Feb-98

Si9945AEY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
25 VGS = 10 through 5 V 20 I D Drain Current (A) 4V I D Drain Current (A) 20 25_C 150_C 15 25 TC = 55_C

Transfer Characteristics

15

10 3V 5

10

0 0 1 2 3 4 5 VDS Drain-to-Source Voltage (V)

0 0 1 2 3 4 5 6 VGS Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current


0.20 800

Capacitance

r DS(on) On-Resistance ( W )

0.16 600 0.12 VGS = 4.5 V 0.08 VGS = 10 V C Capacitance (pF) Ciss

400

200 Coss Crss

0.04

0 0 5 10 15 20 25 ID Drain Current (A)

0 0 10 20 30 40 50 60 VDS Drain-to-Source Voltage (V)

10

Gate Charge

2.4

On-Resistance vs. Junction Temperature

V GS Gate-to-Source Voltage (V)

r DS(on) On-Resistance ( W ) (Normalized)

VDS = 30 V ID = 3.7 A

2.0

VGS = 10 V ID = 3.7 A

1.6

1.2

0.8

0.4

0 0 2 4 6 8 10

0 50

25

25

50

75

100

125

150

175

Qg Total Gate Charge (nC)

TJ Junction Temperature (_C)

Document Number: 70758 S-57253Rev. C, 24-Feb-98

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2-3

Si9945AEY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
30

Source-Drain Diode Forward Voltage


0.20

On-Resistance vs. Gate-to-Source Voltage

10 TJ = 175_C

r DS(on) On-Resistance ( W )

0.16

I S Source Current (A)

0.12

TJ = 25_C

0.08 ID = 3.7 A 0.04

1 0 0.3 0.6 0.9 1.2 1.5

0 0 2 4 6 8 10

VSD Source-to-Drain Voltage (V)

VGS Gate-to-Source Voltage (V)

Threshold Voltage
0.6 120

Single Pulse Power

0.3 V GS(th) Variance (V) ID = 250 mA Power (W) 0.0

90

60

0.3

30 0.6

0.9 50

25

25

50

75

100

125

150

175

0 0.001

0.01

0.1

1 Time (sec)

10

100

1000

TJ Temperature (_C)

Normalized Thermal Transient Impedance, Junction-to-Ambient


2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance

0.2 0.1 0.1 0.05

Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2

0.02 Single Pulse 0.01 104 103 102 101 1 10

2. Per Unit Base = RthJA = 93_C/W 3. TJM TA = PDMZthJA(t) 4. Surface Mounted

10+2

10+3

Square Wave Pulse Duration (sec)

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2-4

Document Number: 70758 S-57253Rev. C, 24-Feb-98