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This document provides specifications for a C2073 NPN Epitaxial Silicon Transistor in a TO-220 package intended for use in TV vertical deflection output applications. The transistor has maximum ratings of 150V for collector-emitter voltage, 150V for collector-base voltage, 5A for collector current, and 25W for collector dissipation. Electrical characteristics include a minimum collector-base breakdown voltage of 150V, collector-emitter breakdown voltage of 150V, collector cut-off current below 10uA, DC current gain of at least 75, collector-emitter saturation voltage below 1V, and current gain bandwidth product above 4MHz.
This document provides specifications for a C2073 NPN Epitaxial Silicon Transistor in a TO-220 package intended for use in TV vertical deflection output applications. The transistor has maximum ratings of 150V for collector-emitter voltage, 150V for collector-base voltage, 5A for collector current, and 25W for collector dissipation. Electrical characteristics include a minimum collector-base breakdown voltage of 150V, collector-emitter breakdown voltage of 150V, collector cut-off current below 10uA, DC current gain of at least 75, collector-emitter saturation voltage below 1V, and current gain bandwidth product above 4MHz.
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Attribution Non-Commercial (BY-NC)
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This document provides specifications for a C2073 NPN Epitaxial Silicon Transistor in a TO-220 package intended for use in TV vertical deflection output applications. The transistor has maximum ratings of 150V for collector-emitter voltage, 150V for collector-base voltage, 5A for collector current, and 25W for collector dissipation. Electrical characteristics include a minimum collector-base breakdown voltage of 150V, collector-emitter breakdown voltage of 150V, collector cut-off current below 10uA, DC current gain of at least 75, collector-emitter saturation voltage below 1V, and current gain bandwidth product above 4MHz.
Copyright:
Attribution Non-Commercial (BY-NC)
Verfügbare Formate
Als PDF, TXT herunterladen oder online auf Scribd lesen
Complement to A940 Collector-Emitter Voltage: VCEO=150V Collector Dissipation: PC(max)=25W
Absolute Maximum Ratings (TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ TSTG Rating 150 150 5 1.5 25 150 -55~+150 Unit V V V A W o o
C C 1. Base 2. Collector 3. Emitter
Electrical Characteristics (TA=25oC)
Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Symbol BVCBO BVCEO BVEBO ICBO hFE VCE(sat) COB fT Test Conditions IC=500A, IE=0 IC=10mA, IB=0 IC=500A, IE=0 VCB=120V, IE=0 VCE=10V, IC=0.5A IC=500mA, IC=0.5A VCB=10V, IE=0, f=1MHz VCE=10V, IC=0.5A 50 4 40 75 Min 150 150 5 10 140 1 V pF MHz Typ Max Unit V V V A