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Si4814DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY    

Si4814DY

Vishay Siliconix

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

PRODUCT SUMMARY

 
 

V DS (V)

r DS(on) ( )

I D (A)

   

0.021

@ V GS = 10 V

7.0

1

Channel-1

Ch

l

   

0.0325

@ V GS = 4.5 V

5.6

 

30

0.020

@ V GS = 10 V

7.4

l 2

Channel-2

Ch

   

0.0265

@ V GS = 4.5 V

8.4

SCHOTTKY PRODUCT SUMMARY

V SD (V) Diode Forward Voltage

V DS (V)

I F (A)

30

0.50 V @ 1.0 A

2.0

D 1

D 1

G 2

S 2

SO-8

1

8

G

1

2

7

S

1 /D

2

3

6

S

1 /D

2

4

5

S

1 /D

2

Top View

Ordering Information:

Si4814DY

Si4814DY-T1 (with Tape and Reel)

FEATURES

LITTLE FOOT Plus Integrated Schottky Alternative Pinning for Additional Layout Options

APPLICATIONS

DC/DC Converters - Notebook

Layout Options APPLICATIONS DC/DC Converters - Notebook D 1 G 1 N-Channel 1 MOSFET S 1

D 1

G 1 N-Channel 1 MOSFET S 1 /D 2 Schottky Diode G 2 N-Channel 2
G
1
N-Channel 1
MOSFET
S
1 /D
2
Schottky Diode
G
2
N-Channel 2
MOSFET

S 2

ABSOLUTE MAXIMUM RATINGS (T A = 25 C UNLESS OTHERWISE NOTED)

 
   

Channel-1

Channel-2

 
 

Parameter

 

Symbol

10 secs

Steady State

10 secs

Steady State

Unit

Drain-Source Voltage

 

V

DS

 

30

V

Gate-Source Voltage

 

V

GS

 

20

V

 

A = 25 C

T

 

7.0

5.5

7.4

5.7

 

C

Continuous Drain Current (T J = 150 C) a

i

D

i

C

T

1

C

a

 

I

I

         
 

D

       
 

A = 70 C

T

 

5.6

4.3

6

4.5

A

A

Pulsed Drain Current

 

I

DM

 

40

 

40

Continuous Source Current (Diode Conduction) a

I

S

1.7

1.0

1.8

0.95

 
 

A = 25 C

T

 

1.9

1.1

2.0

1.16

 

M

Maximum Power Dissipation a

i

P

Di

i

i

a

   

P

P

         

W

W

 

D

       
 

A = 70 C

T

 

1.2

0.71

1.3

0.74

 

Operating Junction and Storage Temperature Range

T J , T stg

 

-55 to 150

 

C

THERMAL RESISTANCE RATINGS

 
   

Channel-1

Channel-2

 

Parameter

Symbol

Typ

Max

Typ

Max

Unit

 

t

10

sec

 

52

65

47

60

 

Maximum Junction-to-Ambient a

Steady-State

R

thJA

90

112

85

107

C/W

Maximum Junction-to-Foot (Drain)

Steady-State

R

thJF

30

38

28

35

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 71685

S-03951—Rev. C, 26-May-03

www.vishay.com

1

Si4814DY

Vishay Siliconix

Si4814DY Vishay Siliconix MOSFET SPECIFICATIONS (T J = 25 C UNLESS OTHERWISE NOTED)   Parameter Symbol

MOSFET SPECIFICATIONS (T J = 25 C UNLESS OTHERWISE NOTED)

 

Parameter

Symbol

Test Condition

 

Min

Typ a

Max

Unit

Static

G

Th

h

ld V

l

V

 

V

V

I

2

A

 

Ch-1

0.8

   

V

Gate

Threshold Voltage

V

GS(th)

V DS = V GS , I D = 250 A

Ch-2

0.8

   

V

G

Gate-Body Leakage

B

d

L

k

 

I

V

V V

2

V

 

Ch-1

   

100

A

I

GSS

V DS = 0 V, V GS = 20 V

Ch-2

   

100

nA

   

V

24 V V

V

 

Ch-1

   

1

 

Z

Zero

G

Gate Voltage Drain Current

V

l

D

i

C

 

I

V DS = 24 V, V GS = 0 V

Ch-2

   

100

A

I

DSS

V

V DS = 24

24

C

V, V GS = 0 V, T J = 85 C

V V

V T

Ch-1

   

15

A

   

Ch-2

   

2000

O

On-State Drain Current b

S

D

i

C

b

 

I

V

V V

1

V

 

Ch-1

20

   

A

I

D(on)

V DS = 5 V, V GS = 10 V

Ch-2

20

   

A

   

V GS =

10 V, I D = 7.0 A

 

Ch-1

 

0.0175

0.021

 

D

Drain-Source On-State Resistance b

i

S

O

S

R

i

b

V GS = 10 V, I D = 7.4 A

 

Ch-2

 

0.0165

0.020

r

DS(on)

V GS = 4.5

V, I D = 5.6 A

 

Ch-1

 

0.027

0.0325

   

V GS = 4.5

V, I D = 8.4 A

 

Ch-2

 

0.022

0.0265

F

Forward Transconductance b

d T

d

b

 

V DS = 15 V, I D = 7.0 A

 

Ch-1

 

17

 

S

S

 

g

fs

V DS = 15 V, I D = 7.4 A

 

Ch-2

 

20

 

Di

Diode

d

F

Forward

Voltage b

d V

l

b

 

V

I S = 1.7 A, V GS = 0 V

 

Ch-1

 

0.7

1.1

V

V

SD

I S = 1 A, V GS = 0 V

Ch-2

 

0.47

0.5

V

Dynamic a

T

l G

Ch

   

Ch-1

 

6.5

10

 

Total

Gate Charge

 

Q

g

Channel-1

Ch-2

 

9.7

15

G

Gate-Source Charge

S

Ch

 

V DS =

15 V,

anne V GS =

5 V, I D =

7.0 A

Ch-1

 

1.5

 

C

nC

 

Q

gs

 

Ch-2

 

2.6

 
   

V DS =

15

V,

Channel-2

anne - V GS = 5 V, I D = -7.4 A

 
   

Ch-1

 

2.7

 

i

Gate-Drain Charge

G

D

Ch

       
 

Q

gd

Ch-2

 

3.8

 

G

Gate

R

Resistance

i

 

R

 

Ch-1

0.5

1.6

2.6

R

G

Ch-2

0.5

1.8

3.1

T

Turn-On Delay Time

D

O

l

Ti

   

Ch-1

 

12

20

 
 

t

d(on)

 

13

20

   

Ch

l

1

Ch-2

Ri

Ti

 

V

Channel-1

= 15 V, R L = 15

DD

DD =

,

L =

 

Ch-1

 

13

20

Rise

Time

 

t

r

I D 1 A, V GEN = 10 V, R G = 6

Ch-2

 

13

20

T

Turn-Off Delay Time

Off D

l

Ti

 

Channel-2

anne -

Ch-1

 

22

35

 

t

d(off)

V DD = 15 V, R L = 15 I D 1 A, V GEN = 10 V, R G = 6

Ch-2

 

29

45

ns

F

ll Ti

 

Ch-1

 

8

15

Fall

Time

 

t

f

 

Ch-2

 

12

20

S

Source-Drain Reverse Recovery Time

D

i

R

R

Ti

 

I F = 1.3 A, di/dt = 100 A/ s

 

Ch-1

 

50

80

 

t

rr

I F = 2.2 A, di/dt = 100 A/ s

Ch-2

 

46

80

Notes

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width 300 s, duty cycle 2%.

SCHOTTKY SPECIFICATIONS (T J = 25 C UNLESS OTHERWISE NOTED)

 

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

   

I F = 1.0 A

 

0.47

0.50

 

Forward Voltage Drop

V

F

I F = 1.0 A, T J = 125 C

 

0.36

0.42

V

   

V r = 30 V

 

0.004

0.100

 

Maximum Reverse Leakage Current

I

rm

V r = 30 V, T J = 100 C

 

0.7

10

mA

V r = -30 V, T J = 125 C

 

3.0

20

Junction Capacitance

C

T

V r = 10 V

 

50

 

pF

Si4814DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 C UNLESS NOTED) CHANNEL−1 Output Characteristics 40 V GS

Si4814DY

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)

CHANNEL−1

Output Characteristics

40 V GS = 10 thru 5 V 32 4 V 24 16 3 V
40
V GS = 10 thru 5 V
32
4 V
24
16
3 V
8
0
0
2
4
6
8
10
- Drain Current (A)I
D

V DS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.05 0.04 V GS = 4.5 V 0.03 V GS = 10 V 0.02 0.01
0.05
0.04
V GS = 4.5 V
0.03
V GS = 10 V
0.02
0.01
0.00
0
8
16
24
32
40
r DS(on) - On-Resistance ( )

I D - Drain Current (A)

Gate Charge

5 V DS = 15 V I D = 7 A 4 3 2 1
5
V DS = 15 V
I D = 7 A
4
3
2
1
0
0.0
1.5
3.0
4.5
6.0
7.5
V GS
-
Gate-to-Source Voltage (V)

Q g - Total Gate Charge (nC)

Transfer Characteristics

40 32 24 16 T C = 125 C 8 25 C -55 C 0
40
32
24
16
T C =
125
C
8
25
C
-55 C
0
- Drain Current (A)I
D

012345

V GS - Gate-to-Source Voltage (V)

Capacitance

750 C iss 600 450 300 C oss C rss 150 0 0 6 12
750
C
iss
600
450
300
C
oss
C rss
150
0
0
6
12
18
24
30
C
- Capacitance (pF)

V DS - Drain-to-Source Voltage (V)

On-Resistance vs. Junction Temperature

1.8 V GS = 10 V I = 7 A D 1.6 1.4 1.2 1.0
1.8
V GS = 10
V
I
= 7 A
D
1.6
1.4
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75
100
125
150
On-Resistance (r )
- (Normalized)
DS(on)

T J - Junction Temperature ( C)

Document Number: 71685

S-03951—Rev. C, 26-May-03

www.vishay.com

3

Si4814DY

Vishay Siliconix

Si4814DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 C UNLESS NOTED) CHANNEL−1 Source-Drain Diode Forward Voltage

TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)

CHANNEL−1

Source-Drain Diode Forward Voltage

50 T J = 150 C 10 T J = 25 C 1 0.0 0.2
50
T J = 150 C
10
T J = 25 C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
- Source Current (A)I
S

V SD - Source-to-Drain Voltage (V)

Threshold Voltage

0.4 0.2 I D = 250 A -0.0 -0.2 -0.4 -0.6 -0.8 -50 -25 0
0.4
0.2
I D = 250 A
-0.0
-0.2
-0.4
-0.6
-0.8
-50
-25
0
25
50
75
100
125
150
GS(th) Variance (V)V

T J - Temperature ( C)

On-Resistance vs. Gate-to-Source Voltage

0.10 0.08 0.06 0.04 I D = 7 A 0.02 0.00 0 2 4 6
0.10
0.08
0.06
0.04
I D = 7 A
0.02
0.00
0
2
4
6
8
10
r DS(on) - On-Resistance ( )

V GS - Gate-to-Source Voltage (V)

Single Pulse Power, Junction-to-Ambient

120 100 80 60 40 20 0 0.001 0.01 0.1 1 10 Power (W)
120
100
80
60
40
20
0
0.001
0.01 0.1
1 10
Power (W)

Time (sec)

Normalized Thermal Transient Impedance, Junction-to-Ambient

2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 P DM 0.05 t 1
2
1
Duty Cycle
=
0.5
0.2
Notes:
0.1
0.1
P DM
0.05
t
1
t
2
t
0.02
1
1. Duty Cycle, D =
t
2
2. Per Unit
Base = R
C/W
thJA = 90
3. T JM
-
T
A =
P
DM Z thJA (t)
Single
Pulse
4. Surface
Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100 600
Normalized Effective Transient
Thermal Impedance

Square Wave Pulse Duration (sec)

Si4814DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 C UNLESS NOTED) CHANNEL−1 Normalized Thermal Transient

Si4814DY

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)

CHANNEL−1

Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10
-1
1
10
Normalized Effective Transient
Thermal Impedance

Square Wave Pulse Duration (sec)

TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)

CHANNEL−2

Output Characteristics

40 V GS = 10 thru 4 V 32 24 16 3 V 8 0
40
V GS = 10 thru 4 V
32
24
16
3 V
8
0
0
2
4
6
8
10
- Drain Current (A)I
D

V DS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.05 0.04 0.03 V GS = 4.5 V 0.02 V GS = 10 V 0.01
0.05
0.04
0.03
V GS = 4.5
V
0.02
V GS = 10 V
0.01
0.00
0
8
16
24
32
40
- On-Resistance (r
)
DS(on)

I D - Drain Current (A)

Transfer Characteristics

40 32 24 16 T C = 125 C 8 25 C -55 C 0
40
32
24
16
T C = 125 C
8
25
C
-55 C
0
- Drain Current (A)I
D

012345

V GS - Gate-to-Source Voltage (V)

Capacitance

1500 1200 C iss 900 600 C oss 300 C rss 0 0 6 12
1500
1200
C
iss
900
600
C
oss
300
C rss
0
0
6
12
18
24
30
C
- Capacitance (pF)

V DS - Drain-to-Source Voltage (V)

Document Number: 71685

S-03951—Rev. C, 26-May-03

www.vishay.com

5

r DS(on) - On-Resistance ( )

Si4814DY

Vishay Siliconix

s i s t a n c e ( ) Si4814DY Vishay Siliconix TYPICAL CHARACTERISTICS (25

TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)

CHANNEL−2

Gate Charge

5 V DS = 15 V I D = 7.4 A 4 3 2 1
5
V DS = 15 V
I D = 7.4 A
4
3
2
1
0
0
2
4
6
8
10
V GS
-
Gate-to-Source Voltage (V)

Q g - Total Gate Charge (nC)

Source-Drain Diode Forward Voltage

50 T J = 150 C 10 T J = 25 C 1 0.0 0.2
50
T J = 150 C
10
T J = 25 C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
- Source Current (A)I
S

V SD - Source-to-Drain Voltage (V)

Reverse Current vs. Junction Temperature

10 1 1 -1 1 -2 30 V 24 V 1 -3 1 -4 1
10
1
1 -1
1 -2
30 V
24 V
1 -3
1 -4
1 -5
0
25
50
75
100
125
150
- Reverse Current (mA)I
R

T J - Temperature ( C)

On-Resistance vs. Junction Temperature

1.8 V GS = 10 V 1.6 I D = 7.4 A 1.4 1.2 1.0
1.8
V GS = 10 V
1.6
I D = 7.4 A
1.4
1.2
1.0
0.8
0.6
On-Resistance (r )
- (Normalized)
DS(on)
-50 -25 0 25 50 75 100 125 150 T J - Junction Temperature (
-50
-25
0
25
50
75
100
125
150
T J - Junction Temperature ( C)
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
0.06
0.04
I D = 7.4 A
0.02
0.00
0
2
4
6
8
10

V GS - Gate-to-Source Voltage (V)

Single Pulse Power, Junction-to-Ambient

120 100 80 60 40 20 0 0.001 0.01 0.1 1 10 Power (W)
120
100
80
60
40
20
0
0.001
0.01 0.1
1 10
Power (W)

Time (sec)

Si4814DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 C UNLESS NOTED) CHANNEL−2 Normalized Thermal Transient

Si4814DY

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)

CHANNEL−2

Normalized Thermal Transient Impedance, Junction-to-Ambient

2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 P DM 0.1 t 1 0.05
2
1
Duty
Cycle =
0.5
0.2
Notes:
0.1
P DM
0.1
t
1
0.05
t
2
t
1
1. Duty Cycle, D =
t
2
0.02
2. Per Unit Base = R thJA = 85 C/W
(t)
3. T JM -
T A = P
DM Z thJA
4. Surface Mounted
Single Pulse
0.01
10 -4
10 -2
10
-1
10 -3
1
10
100 600
Normalized Effective Transient
Thermal Impedance

Square Wave Pulse Duration (sec)

Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single
Pulse
0.01
10 -4
10 -3
10 -2
10
-1
1
10
Normalized Effective Transient
Thermal Impedance

Square Wave Pulse Duration (sec)

Document Number: 71685

S-03951—Rev. C, 26-May-03

www.vishay.com

7

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