Si4814DY

Vishay Siliconix

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

PRODUCT SUMMARY
VDS (V)
Channel 1 Channel-1 30 Channel 2 Channel-2

rDS(on) (W)
0.021 @ VGS = 10 V 0.0325 @ VGS = 4.5 V 0.020 @ VGS = 10 V 0.0265 @ VGS = 4.5 V

ID (A)
7.0 5.6 7.4 8.4

FEATURES
D LITTLE FOOT Plust Integrated Schottky D Alternative Pinning for Additional Layout Options

APPLICATIONS
D DC/DC Converters - Notebook
D1

SCHOTTKY PRODUCT SUMMARY

VDS (V)
30

VSD (V) Diode Forward Voltage

0.50 V @ 1.0 A

IF (A)
2.0

SO-8
D1 D1 G2 S2 1 2 3 4 Top View Ordering Information: Si4814DY Si4814DY-T1 (with Tape and Reel) 8 7 6 5 G1 S1/D2 S1/D2 S1/D2

G1 N-Channel 1 MOSFET

S1/D2

Schottky Diode G2 N-Channel 2 MOSFET S2

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Channel-1 Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C TA = 25_C TA = 70_C

Channel-2 10 secs
30 20 V 7.4 6 40 5.7 4.5 A 0.95 1.16 0.74 W _C

Symbol
VDS VGS

10 secs

Steady State

Steady State

Unit

7.0 ID IDM IS PD TJ, Tstg 1.7 1.9 1.2 5.6 40

5.5 4.3

1.0 1.1 0.71 - 55 to 150

1.8 2.0 1.3

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Channel-1 Parameter
t v 10 sec M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1 x 1 FR4 Board. Document Number: 71685 S-03951Rev. C, 26-May-03 www.vishay.com Steady-State Steady-State RthJA RthJF

Channel-2 Typ
47 85 28

Symbol

Typ
52 90 30

Max
65 112 38

Max
60 107 35

Unit
_C/W

Si4814DY
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate Body Leakage Gate-Body VGS(th) GS( h) IGSS VDS = VGS, ID = 250 mA VDS = 0 V, V VGS = 20 V VDS = 24 V, V VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 24 V, V VGS = 0 V, V TJ = 85_C On State Drain Currentb On-State ID(on) D( ) VDS = 5 V, V VGS = 10 V VGS = 10 V, ID = 7.0 A Drain Source On-State Drain-Source On State Resistanceb rDS(on) DS( ) VGS = 10 V, ID = 7.4 A VGS = 4.5 V, ID = 5.6 A VGS = 4.5 V, ID = 8.4 A Forward Transconductanceb Diode Forward Voltageb gfs f VSD VDS = 15 V, ID = 7.0 A VDS = 15 V, ID = 7.4 A IS = 1.7 A, VGS = 0 V IS = 1 A, VGS = 0 V Ch-1 Ch 1 Ch-2 Ch-1 Ch 1 Ch-2 Ch-1 Ch 1 Ch-2 Ch-1 Ch 1 Ch-2 Ch-1 Ch 1 Ch-2 Ch-1 Ch 1 Ch-2 Ch-1 Ch 1 Ch-2 Ch-1 Ch 1 Ch-2 Ch-1 Ch 1 Ch-2 20 20 0.0175 0.0165 0.027 0.022 17 20 0.7 0.47 1.1 0.5 V S 0.021 0.020 0.0325 0.0265 W A 0.8 0.8 100 100 1 100 15 2000 mA nA V

Symbol

Test Condition

Min

Typa

Max

Unit

Dynamica
Total Gate Charge Gate Source Charge Gate-Source Gate Drain Charge Gate-Drain Gate Resistance Turn On Delay Time Turn-On Rise Time Turn Off Delay Time Turn-Off Fall Time Source Drain Reverse Recovery Time Source-Drain Qg Channel-1 VDS = 15 V, VGS = 5 V, ID = 7.0 A Qgs Qgd d RG td(on) d( ) tr td(off) d( ff) tf trr IF = 1.3 A, di/dt = 100 A/ms IF = 2.2 A, di/dt = 100 mA/ms Channel 1 Channel-1 VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W Channel-2 VDD = 15 V, RL = 15 W ID ^ 1 A A, VGEN = 10 V V, RG = 6 W Channel-2 VDS = 15 V, VGS = 5 V, ID = - 7.4 A Ch-1 Ch 1 Ch-2 Ch-1 Ch 1 Ch-2 Ch-1 Ch 1 Ch-2 Ch-1 Ch 1 Ch-2 Ch-1 Ch 1 Ch-2 Ch-1 Ch 1 Ch-2 Ch-1 Ch 1 Ch-2 Ch-1 Ch 1 Ch-2 Ch-1 Ch 1 Ch-2 0.5 0.5 6.5 9.7 1.5 2.6 2.7 3.8 1.6 1.8 12 13 13 13 22 29 8 12 50 46 2.6 3.1 20 20 20 20 35 45 15 20 80 80 ns W nC 10 15

Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%.

SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter
Forward Voltage Drop

Symbol
VF

Test Condition
IF = 1.0 A IF = 1.0 A, TJ = 125_C Vr = 30 V Vr = 30 V, TJ = 100_C Vr = - 30 V, TJ = 125_C Vr = 10 V

Min

Typ
0.47 0.36 0.004 0.7 3.0 50

Max
0.50 0.42 0.100 10 20

Unit
V

Maximum Reverse Leakage Current Junction Capacitance

Irm CT

mA pF

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Document Number: 71685 S-03951Rev. C, 26-May-03

Si4814DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40 VGS = 10 thru 5 V 32 I D - Drain Current (A) 4V 24 I D - Drain Current (A) 24 32 40

CHANNEL1
Transfer Characteristics

16 3V 8

16 TC = 125_C 8 25_C - 55_C 2 3 4 5

0 0 2 4 6 8 10

0 0 1

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.05 750

Capacitance

DS(on) - On-Resistance ( W )

VGS = 4.5 V 0.03

C - Capacitance (pF)

0.04

600

Ciss

450

0.02

VGS = 10 V

300

Coss Crss

0.01

150

0.00 0 8 16 24 32 40

0 0 6 12 18 24 30

ID - Drain Current (A)

VDS - Drain-to-Source Voltage (V)

Gate Charge
5 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 7 A 4 1.8

On-Resistance vs. Junction Temperature

VGS = 10 V ID = 7 A

r DS(on) - On-Resistance (W ) (Normalized) 3.0 4.5 6.0 7.5

1.6

1.4

1.2

1.0

0.8

0 0.0

1.5

0.6 - 50

- 25

25

50

75

100

125

150

Qg - Total Gate Charge (nC) Document Number: 71685 S-03951Rev. C, 26-May-03

TJ - Junction Temperature (_C) www.vishay.com

Si4814DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
50 0.10

CHANNEL1
On-Resistance vs. Gate-to-Source Voltage

DS(on) - On-Resistance ( W )

0.08

I S - Source Current (A)

TJ = 150_C 10 TJ = 25_C

0.06

0.04 ID = 7 A 0.02

1 0.0

0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10

VSD - Source-to-Drain Voltage (V)

VGS - Gate-to-Source Voltage (V)

Threshold Voltage
120 0.4 100 V GS(th) Variance (V) 0.2 - 0.0 - 0.2 - 0.4 - 0.6 - 0.8 - 50 ID = 250 mA Power (W) 80

Single Pulse Power, Junction-to-Ambient

60

40

20

0 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 Time (sec) 1 10 TJ - Temperature (_C)

Normalized Thermal Transient Impedance, Junction-to-Ambient

2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5

0.2
Notes:

0.1 0.1 0.05

t1 PDM

0.02

t2 1. Duty Cycle, D =

2. Per Unit Base = RthJA = 90_C/W

t1 t2

Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10

3. TJM - TA = PDMZthJA(t) 4. Surface Mounted

100

600

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Document Number: 71685 S-03951Rev. C, 26-May-03

Si4814DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5

CHANNEL1

Normalized Thermal Transient Impedance, Junction-to-Foot

0.2 0.1 0.1 0.05 0.02

Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Output Characteristics
40 VGS = 10 thru 4 V 32 I D - Drain Current (A) I D - Drain Current (A) 32 40

CHANNEL2
Transfer Characteristics

24

24

16

3V

16 TC = 125_C 8 25_C - 55_C

0 0 2 4 6 8 10

0 0 1 2 3 4 5

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.05 1500

Capacitance

r DS(on) - On-Resistance ( W )

0.04 C - Capacitance (pF)

1200 Ciss

0.03 VGS = 4.5 V 0.02 VGS = 10 V 0.01

900

600

Coss

300

Crss

0.00 0 8 16 24 32 40

0 0 6 12 18 24 30

ID - Drain Current (A) Document Number: 71685 S-03951Rev. C, 26-May-03

VDS - Drain-to-Source Voltage (V)

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Si4814DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Gate Charge
5 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 7.4 A 1.8 VGS = 10 V ID = 7.4 A

CHANNEL2
On-Resistance vs. Junction Temperature

r DS(on) - On-Resistance (W ) (Normalized)

1.6

1.4

1.2

1.0

0.8

0 0 2 4 6 8 10

0.6 - 50

- 25

25

50

75

100

125

150

Qg - Total Gate Charge (nC)

TJ - Junction Temperature (_C)

Source-Drain Diode Forward Voltage

50 0.10

On-Resistance vs. Gate-to-Source Voltage

DS(on) - On-Resistance ( W )

0.08

I S - Source Current (A)

TJ = 150_C 10

0.06

TJ = 25_C

0.04 ID = 7.4 A 0.02

1 0.0

0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10

VSD - Source-to-Drain Voltage (V)

VGS - Gate-to-Source Voltage (V)

Reverse Current vs. Junction Temperature

10 120 100

Single Pulse Power, Junction-to-Ambient

I R - Reverse Current (mA)

Power (W) 24 V

1 -1 1 -2 1 -3

80

30 V

60

40

1 -4

20

1 -5 0 25 50 75 100 125 150 TJ - Temperature (_C)

0 0.001 0.01 0.1 Time (sec) 1 10

www.vishay.com

Document Number: 71685 S-03951Rev. C, 26-May-03

Si4814DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance

CHANNEL2

0.2 0.1 0.1 0.05 0.02

Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2

2. Per Unit Base = RthJA = 85_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted

Single Pulse 0.01 10 -4

10 -3

10 -2

10 -1

10

100

600

Square Wave Pulse Duration (sec)

2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5

Normalized Thermal Transient Impedance, Junction-to-Foot

0.2 0.1 0.1 0.05 0.02

Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10

Document Number: 71685 S-03951Rev. C, 26-May-03

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