Q-1 Multiple Choice Questions:(1 mark each) 1. What is meant by the rise time of a waveform? (a) The time taken by the waveform to rise from 0% to 90% of the height of a step. (b) The time taken by the waveform to rise from 10% to 90% of the height of a step (c) The time delay from when the input step changes by 50% to when the output step changes by 50% (d) The time taken for the waveform to decrease from 90% to 10% of the height of a step 2. What is the cause of storage time in a bipolar transistor? (a) The time taken to remove excess charge stored in the base region as a result of saturation (b) The 'memory effect' of the device (c) The inertia of the majority charge carriers (d) The inertia of the minority charge carriers 3. What is meant by the fan-out of a logic gate? (a) The number of other gates that can be connected to the gate's output
(b) The amount of cooling required by the gate. (c) The number of other gates that can be connected to one of the gate's inputs. (d) The physical distance between the output pins on the device. 4. Which of the following statements is incorrect? (a) CMOS gates have very good noise immunity that is typically 10% of the supply voltage. (b) When a CMOS gate is static it has negligible power consumption (c) CMOS gates have logic levels close to the supply rails. (d) Most CMOS circuits operate from a single supply voltage of from 5 to 15 V. 5. Which of the following statements is incorrect? (a) Standard TTL devices have a propagation delay that is dominated by the storage time of the bipolar transistors used (b) TTL devices have logic levels of about 3.4 V and 0.2 V. (c) TTL logic has very low power consumption and is therefore widely used in highly integrated components (d) TTL logic normally operates from a single 5 V supply 6. Which of the following statements is incorrect? (a) ECL suffers from low noise immunity (b) ECL has high power consumption (c) ECL is widely used in high-speed applications (d) ECL is one of the fastest forms of electronic logic. 7. Which equation is correct? (a) VNL = VIL(max) + VOL(max) (b) VNH = VOH(min) + VIH(min) (c) VNL = VOH(min) VIH(min) (d) VNH = VOH(min) VIH(min)
8. In a TTL circuit, if an excessive number of load gate inputs are connected, ________. (a) V OH(min) drops below V OH
(b) V OH drops below V OH(min
(c) V OH exceeds V OH(min) (d) V OH and V OH(min) are unaffected 9. Which factor does not affect CMOS loading? (a) Charging time associated with the output resistance of the driving gate (b) Discharging time associated with the output resistance of the driving gate (c) Output capacitance of the load gates. (d) Input capacitance of the load gates. 10. Cross talk can be avoided by ___. (a) Decreasing the spacing between the metal layers. (b) Shielding the nets (c) Using lower metal layers (d) Using long nets
Q-2 Answer in short/Define:(2 marks each) 1. Explain Electric field Intensity? 2. What do you mean by Potential? 3. Define Electric Dipole? 4. State Bio-savarts Law? 5. State Amperes Circuital law?
Q-3 Answer in brief:(3 marks each) 1. Define and prove Potential Difference? 2. Determine H at P 2 (0.4,0.3,0) in the field of an 8A filamentary current directed inward from infinity to the origin on the positive x axis and then outward to infinity along the y axis? 3. State and prove Stokes theorem?
Q-4 Answer the following:(5 marks each) 1. What do you mean by magnetic Flux and Magnetic flux density? 2. If H= 0.2z 2 a x for z > 0, and H = 0 elsewhere as shown in figure below. Calculate . H dL
about a square path with side d, centered at (0,0,z
1 ) in the y = 0 plane where z 1 > d/2? 3. Given the potential field, 2 2 5 V x y z , and a point P(-4, 3, 6), we wish to find several numerical values at point p: the potential V,the electric field intensity E, the direction of E, the electric flux density D, and the volume charge density v ?
Q-5 Answer the following:(7 marks each) 1. State and prove Curl function? 2. Define and Prove Biot Savart Law? 3. Define and prove Amperes circuital law? Q-6 Answer in detail: (10 marks each) 1. State and prove Energy density in the electrostatic field? 2. a) State and prove potential gradient function for rectangular, cylindrical and spherical co-ordinates? b) For the given non uniform field 2 x y z E ya xa a Determine the work expended in carrying 2C from B(1,0,1) to A(0.8,0.6,1) along the shorter arc of the circle;