Sie sind auf Seite 1von 5

RAI UNIVERSITY, GUJARAT

End-Semester Examination MAY 2014




B.Tech EngineeringSemester VI


Subject: VLSI & Embedded Systems

Subject Code: Total Marks: 100
Enrollment No.:
Date:
Time: 3 hours


Q-1 Multiple Choice Questions:(1 mark each)
1. What is meant by the rise time of a waveform?
(a) The time taken by the waveform to
rise from 0% to 90% of the height
of a step.
(b) The time taken by the waveform to rise from
10% to 90% of the height of a step
(c) The time delay from when the input
step changes by 50% to when the
output step changes by 50%
(d) The time taken for the waveform to decrease
from 90% to 10% of the height of a step
2. What is the cause of storage time in a bipolar transistor?
(a) The time taken to remove excess
charge stored in the base region as a
result of saturation
(b) The 'memory effect' of the device
(c) The inertia of the majority charge
carriers
(d) The inertia of the minority charge carriers
3. What is meant by the fan-out of a logic gate?
(a) The number of other gates that can
be connected to the gate's
output

(b) The amount of cooling required by the gate.
(c) The number of other gates
that can be connected to one
of the gate's inputs.
(d) The physical distance between the output pins
on the device.
4. Which of the following statements is incorrect?
(a) CMOS gates have very good noise
immunity that is typically 10% of
the supply voltage.
(b) When a CMOS gate is static it has negligible
power consumption
(c) CMOS gates have logic levels close
to the supply rails.
(d) Most CMOS circuits operate from a single
supply voltage of from 5 to 15 V.
5. Which of the following statements is incorrect?
(a) Standard TTL devices have a
propagation delay that is dominated
by the storage time of the bipolar
transistors used
(b) TTL devices have logic levels of about 3.4 V
and 0.2 V.
(c) TTL logic has very low power
consumption and is therefore
widely used in highly integrated
components
(d) TTL logic normally operates from a single 5 V
supply
6. Which of the following statements is incorrect?
(a) ECL suffers from low noise
immunity
(b) ECL has high power consumption
(c) ECL is widely used in high-speed
applications
(d) ECL is one of the fastest forms of electronic
logic.
7. Which equation is correct?
(a) VNL = VIL(max) + VOL(max) (b) VNH = VOH(min) + VIH(min)
(c) VNL = VOH(min) VIH(min) (d) VNH = VOH(min) VIH(min)

8. In a TTL circuit, if an excessive number of load gate inputs are connected, ________.
(a) V
OH(min)
drops below V
OH

(b) V
OH
drops below V
OH(min

(c) V
OH
exceeds V
OH(min)
(d) V
OH
and V
OH(min)
are unaffected
9. Which factor does not affect CMOS loading?
(a) Charging time associated with the
output resistance of the driving gate
(b) Discharging time associated with the output
resistance of the driving gate
(c) Output capacitance of the load
gates.
(d) Input capacitance of the load gates.
10. Cross talk can be avoided by ___.
(a) Decreasing the spacing between the
metal layers.
(b) Shielding the nets
(c) Using lower metal layers (d) Using long nets

























































Q-2 Answer in short/Define:(2 marks each)
1. Explain Electric field Intensity?
2. What do you mean by Potential?
3. Define Electric Dipole?
4. State Bio-savarts Law?
5. State Amperes Circuital law?

Q-3 Answer in brief:(3 marks each)
1. Define and prove Potential Difference?
2. Determine H at P
2
(0.4,0.3,0) in the field of an 8A filamentary current directed inward
from infinity to the origin on the positive x axis and then outward to infinity along the y
axis?
3. State and prove Stokes theorem?

Q-4 Answer the following:(5 marks each)
1. What do you mean by magnetic Flux and Magnetic flux density?
2. If H= 0.2z
2
a
x
for z > 0, and H = 0 elsewhere as shown in figure below. Calculate
. H dL

about a square path with side d, centered at (0,0,z


1
) in the y = 0 plane where
z
1
> d/2?
3.
Given the potential field,
2
2 5 V x y z , and a point P(-4, 3, 6), we wish to find several
numerical values at point p: the potential V,the electric field intensity E, the direction of
E, the electric flux density D, and the volume charge density
v
?

Q-5 Answer the following:(7 marks each)
1. State and prove Curl function?
2. Define and Prove Biot Savart Law?
3. Define and prove Amperes circuital law?
Q-6 Answer in detail: (10 marks each)
1. State and prove Energy density in the electrostatic field?
2. a) State and prove potential gradient function for rectangular, cylindrical and spherical
co-ordinates?
b) For the given non uniform field
2
x y z
E ya xa a
Determine the work expended in carrying 2C from B(1,0,1) to A(0.8,0.6,1) along the
shorter arc of the circle;

2 2
x y , z ?

Das könnte Ihnen auch gefallen