2SK974 L , 2SK974 S

Silicon N-Channel MOS FET

Application

DPAK-1

High speed power switching

Features

12

Low on-resistance
High speed switching
Low drive current
4 V gate drive device
Can be driven from 5 V source
Suitable for motor drive, DC-DC converter,
power switch and solenoid drive

2, 4

3
12

S type

L type

1. Gate
2. Drain
3. Source
4. Drain

Table 1 Absolute Maximum Ratings (Ta = 25C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDSS

60

Gate to source voltage

VGSS

20

Drain current

ID

Drain peak current

ID(peak)*

12

Body to drain diode reverse drain current

IDR

Channel dissipation

Pch**

20

Channel temperature

Tch

150

Storage temperature

Tstg

55 to +150

*
**

PW 10 s, duty cycle 1 %
Value at TC = 25 C

2SK974 L , 2SK974 S

Table 2 Electrical Characteristics (Ta = 25C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Drain to source breakdown

voltage

V(BR)DSS

60

ID = 10 mA, VGS = 0

Gate to source breakdown

voltage

V(BR)GSS

20

IG = 100 A, VDS = 0

Gate to source leak current

IGSS

10

VGS = 16 V, VDS = 0

Zero gate voltage drain current

IDSS

100

VDS = 50 V, VGS = 0

Gate to source cutoff voltage

VGS(off)

1.0

2.0

ID = 1 mA, VDS = 10 V

Static drain to source on state

resistance

RDS(on)

0.15

0.18

ID = 2 A, VGS = 10 V *

0.20

ID = 2 A, VGS = 4 V *

0.25

Forward transfer admittance

|yfs|

2.4

4.0

ID = 2 A, VDS = 10 V *

Input capacitance

Ciss

400

pF

VDS = 10 V, VGS = 0,

Output capacitance

Coss

230

pF

f = 1 MHz

Reverse transfer capacitance

Crss

60

pF

Turn-on delay time

td(on)

ns

Rise time

tr

25

ns

ID = 2 A, VGS = 10 V,
RL = 15

Turn-off delay time

td(off)

180

ns

Fall time
tf

75

ns

Body to drain diode forward

voltage

VDF

0.9

IF = 3 A, VGS = 0

Body to drain diode reverse

recovery time

trr

85

ns

IF = 3 A, VGS = 0,
diF/dt = 50 A/s

* Pulse Test

2SK974 L , 2SK974 S

Maximum Safe Operation Area

Power vs. Temperature Derating

100

20

10

10
3

50
100
Case Temperature TC (C)

150

Pulse Test

3V

2.5 V

10

DC

10

m
Op s (1
e
(T rat Sho
C = ion t)
25
C
)

Typical Transfer Characteristics

5V
4V
3.5 V

PW

10

Drain Current ID (A)

Drain Current ID (A)

10 V

Ta = 25C

10 s

0.1
0.1 0.3
30
100
1.0
3
10
Drain to Source Voltage VDS (V)

Typical Output Characteristics

10

is )
th (on
in DS
n R
tio
ra d by
e
p
O mite
li

1.0
0.3

is

e
ar

s
m

Drain Current ID (A)

30

Channel Dissipation Pch (W)

30

VDS = 10 V
Pulse Test

75C

25C
TC= 25C

VGS = 2 V
0

6
2
4
8
10
Drain to Source Voltage VDS (V)

3
1
2
4
Gate to Source Voltage VGS (V)

2SK974 L , 2SK974 S

Static Drain to Source on State

Resistance vs. Drain Current

Drain to Source Saturation Voltage

VDS (on) (V)

1.0

Pulse Test

0.8

5A

0.6

0.4
2A
ID = 1 A

0.2

6
2
4
8
10
Gate to Source Voltage VGS (V)

Static Drain to Source on State Resistance

RDS (on) ()

Drain to Source Saturation Voltage

vs. Gate to Source Voltage
5
2
1.0
0.5

Forward Transfer Admittance yfs (S)

Static Drain to Source on State Resistance

RDS (on) ()

0.2

Pulse Test

ID = 5 A
1 A, 2 A
VGS = 4 V
5A
1 A, 2 A

0.1

0
40

VGS = 10 V

0
40
120
80
Case Temperature TC (C)

10 V

0.1
0.05
0.2

0.5

1.0 2
5
10
Drain Current ID (A)

20

Forward Transfer Admittance

vs. Drain Current

0.4

0.3

VGS = 4 V

0.2

Static Drain to Source on State

Resistance vs. Temperature
0.5

Pulse Test

160

10
VDS = 10 V
5 Pulse Test
2

25C
TC = 25C

75C

1.0
0.5

0.2
0.1
0.05

0.1

2
0.2
0.5 1.0
Drain Current ID (A)

2SK974 L , 2SK974 S

Typical Capacitance vs.

Drain to Source Voltage

Body to Drain Diode Reverse

Recovery Time
10000
di/dt = 50 A/s, Ta = 25C
VGS = 0
Pulse Test

200

VGS = 0
f = 1 MHz

3000
Capacitance C (pF)

Reverse Recovery Time trr (ns)

500

100
50

20
10

1000
Ciss
300

Coss

100
Crss
30
10

5
0.2

0.5 1.0
2
5
10
Reverse Drain Current IDR (A)

20

Switching Characteristics

80

16

25 V
60

40

VDD = 50 V

20
25 V
10 V
0

12

10 V

VDS

VGS
ID = 3 A

8
12
16
Gate Charge Qg (nc)

8
4

0
20

500
td (off)
200
Switching Time t (ns)

20
Gate to Source Voltage VGS (V)

Drain to Source Voltage VDS (V)

Dynamic Input Characteristics

100

VDD = 50 V

10
20
30
40
50
Drain to Source Voltage VDS (V)

100

tf

50 VGS = 10 V
PW = 2 s, duty < 1 %

tr

20
10
5
0.1

td (on)
0.2

0.5 1.0
2
Drain Current ID (A)

10

2SK974 L , 2SK974 S

Reverse Drain Current vs.

Source to Drain Voltage

Reverse Drain Current IDR (A)

10
Pulse Test

10 V
15 V

4
5V
2

VGS = 0, 5 V

0.8
0.4
1.2
2.0
1.6
Source to Drain Voltage VSD (V)

Normalized Transient Thermal Impedance s (t)

Normalized Transient Thermal Impedance vs. Pulse Width

3
1.0

TC = 25C

D=1
0.5

0.3

0.2

0.1

0.05
0.02

chc (t) = s (t) chc

chc = 6.25C/W, TC = 25C

0.1

0.03
0.01
10

PDM

lse
0.01 ot Pu
h
1S

100

D =PW
T

PW
T
1m

10 m
Pulse Width PW (s)

100 m

10

2SK974 L , 2SK974 S

Switching Time Test Circuit

Wavewforms

Vin Monitor
90 %
Vout Monitor
D.U.T
RL

Vin
Vout

10 %
10 %

10 %

50
Vin = 10 V

. 30 V
VDD =
.

td (on)

90 %
tr

90 %
td (off)

tf