Beruflich Dokumente
Kultur Dokumente
C)
SiH Cl
Si 2HCl SiH
2
Cl
2
Si+2HCl
DCS EpiHydrochloride
Heat(1100
C)
AsH
3
As+3/2H
2
MODULEII ICTECHNOLOGY 12
Schematic of DCS Epi Grow and SchematicofDCSEpiGrowand
ArsenicDopingProcess
SiH
2
Cl
2
AsH AsH
3
HCl
H
2
Si AsH
3
As H
MODULEII ICTECHNOLOGY 13
EpitaxialSiliconGrowthRateTrends
Temperature (C)
1.0
1300 1200 1100 1000 900 800 700
0.5
SiH
4
0.1
0.2
SiH
4
SiHCl
3
Masstransport
limited
0.05
Surfacereactionlimited
0.01
0.02
SiH
2
Cl
2
MODULEII ICTECHNOLOGY 14
1000/T(K)
0.7 0.8 0.9 1.0 1.1
Epitaxy Process, Batch System EpitaxyProcess,BatchSystem
Hydrogenpurge,temperaturerampup
HCl clean HClclean
Epitaxiallayergrow
H d l d Hydrogenpurge,temperaturecooldown
Nitrogenpurge
OpenChamber,waferunloading,reloading
MODULEII ICTECHNOLOGY 15
SingleWaferReactor
Sealedchamber,hydrogenambient
Capable for multiple chambers on a Capableformultiplechambersona
mainframe
Largewafersize(to300mm)
Better uniformity control Betteruniformitycontrol
MODULEII ICTECHNOLOGY 16
SingleWaferReactor
HeatingLamps
Heat
Radiation
Wafer
RReactants
Reactants&
b d t byproducts
Quartz
Window
Quartz
Lift
Fi
Susceptor
MODULEII ICTECHNOLOGY 17
Fingers
Epitaxy Process, Single Wafer System EpitaxyProcess,SingleWaferSystem
Hydrogenpurge,clean,temperatureramp
up
Epitaxiallayergrow
Hydrogenpurge,heatingpoweroff y g p g , g p
Waferunloading,reloading
InsituHClclean,
MODULEII ICTECHNOLOGY 18
Why Hydrogen Purge WhyHydrogenPurge
Mostsystemsusenitrogenaspurgegas
Nitrogen is a very stable abundant Nitrogenisaverystableabundant
At>1000C,N
2
canreactwithsilicon
SiN f f ff i d i i SiNonwafersurfaceaffectsepideposition
H
2
isusedforepitaxychamberpurge
Cleanwafersurfacebyhydridesformation
MODULEII ICTECHNOLOGY 19
Properties of Hydrogen PropertiesofHydrogen
Name Hydrogen
Symbol H
Atomic number 1
Atomicweight 1.00794 Atomic weight 1.00794
Discoverer Henry Cavendish
Discovered at England
Discovery date 1766
O i i f F th G k d "h d " d" " i Origin of name From the Greek words "hydro" and "genes" meaning
"water" and "generator"
Molar volume 11.42 cm
3
Velocity of sound 1270 m/sec y
Refractive index 1.000132
Melting point
-258.99 C
Boiling point
-252.72 C
Th l d ti it 01805W
-1
K
-1
MODULEII ICTECHNOLOGY 20
Thermal conductivity 0.1805 W m
1
K
1
Defects in Epitaxy Layer DefectsinEpitaxyLayer
StackingFaultfromSurface
Nucleation
StackingFaultformSubstrate
StackingFault
Dislocation
ImpurityParticle
Hillock
Substrate
EpiLayer
AfterS.M.ZsesVLSITechnology
Substrate
MODULEII ICTECHNOLOGY 21
Future Trends FutureTrends
Larger wafer size Largerwafersize
Singlewaferepitaxialgrow
i Lowtemperatureepitaxy
Ultrahighvacuum(UHV,to10
9
Torr)
Selectiveepitaxy
MODULEII ICTECHNOLOGY 22
Summary Summary
Silicon is abundant cheap and has strong Siliconisabundant,cheapandhasstrong,
stableandeasygrownoxide.
<100> and <111> <100>and<111>
CZandfloatingzone,CZismorepopular
Sawing,edging,lapping,etchingandCMP
MODULEII ICTECHNOLOGY 23