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EE105Fall2007 1
Lecture4
OUTLINE
BipolarJunctionTransistor(BJT)
Generalconsiderations
Structure
O ti i ti d
EE105Spring2008 Lecture4,Slide1 Prof.Wu,UCBerkeley
Operationinactivemode
LargesignalmodelandIVcharacteristics
Transconductance
Smallsignalmodel
TheEarlyeffect
Reading:Chapter4.14.4
StructureandSymbolofBipolarTransistor
EE105Spring2008 Lecture4,Slide2 Prof.Wu,UCBerkeley
Bipolartransistorcanbethoughtofasasandwichof
threedopedSiregions.Theoutertworegionsare
dopedwiththesamepolarity,whilethemiddle
regionisdopedwithoppositepolarity.
ForwardActiveRegion

EE105Spring2008 Lecture4,Slide3 Prof.Wu,UCBerkeley

Forwardactiveregion:V
BE
>0,V
BC
<0.
Figureb)presentsawrong wayofmodelingFigurea).

AccurateBipolarRepresentation
EE105Spring2008 Lecture4,Slide4 Prof.Wu,UCBerkeley
Collectoralsocarriescurrentduetocarrier
injectionfrombase.
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EE105Fall2007 2
ConstantCurrentSource
EE105Spring2008 Lecture4,Slide5 Prof.Wu,UCBerkeley
Ideally,thecollectorcurrentdoesnotdependonthe
collectortoemittervoltage.Thispropertyallowsthe
transistortobehaveasaconstantcurrentsource
whenitsbaseemittervoltageisfixed.
BaseCurrent
EE105Spring2008 Lecture4,Slide6 Prof.Wu,UCBerkeley
Basecurrentconsistsoftwocomponents:
Reverseinjectionofholesintotheemitterand
Recombinationofholeswithelectronscomingfromthe
emitter.
C B
I I =
EmitterCurrent
C E
B C E
I
I I
I I I

+ =
+ =

1
1
EE105Spring2008 Lecture4,Slide7 Prof.Wu,UCBerkeley
B
C
I
I
=
ApplyingKirchoffscurrentlawtothe
transistor,wecaneasilyfindtheemitter
current.
SummaryofCurrents

=
=
exp
1
exp
BE
S B
T
BE
S C
V
V
I I
V
V
I I
EE105Spring2008 Lecture4,Slide8 Prof.Wu,UCBerkeley

=
+
+
=
1
exp
1
T
BE
S E
T
V
V
I I
V
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EE105Fall2007 3
BipolarTransistorLargeSignalModel
EE105Spring2008 Lecture4,Slide9 Prof.Wu,UCBerkeley
Adiodeisplacedbetweenbaseandemitteranda
voltagecontrolledcurrentsourceisplacedbetween
thecollectorandemitter.
Example:MaximumR
L
EE105Spring2008 Lecture4,Slide10 Prof.Wu,UCBerkeley
AsR
L
increases,V
x
dropsandeventuallyforwardbiasesthe
collectorbasejunction.Thiswillforcethetransistoroutof
forwardactiveregion.
Therefore,thereexistsamaximumtolerablecollector
resistance.
CharacteristicsofBipolarTransistor
EE105Spring2008 Lecture4,Slide11 Prof.Wu,UCBerkeley
Example:IVCharacteristics
EE105Spring2008 Lecture4,Slide12 Prof.Wu,UCBerkeley
1.69 A
0.25 A
1.69 A
0.25 A
100 =
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EE105Fall2007 4
Transconductance
T
BE
S
T
m
T
BE
S
BE
m
I
V
V
I
V
g
V
V
I
dV
d
g
=

=
exp
1
exp
EE105Spring2008 Lecture4,Slide13 Prof.Wu,UCBerkeley
Transconductance,g
m
showsameasureofhowwell
thetransistorconvertsvoltagetocurrent.
Itwilllaterbeshownthatgmisoneofthemost
importantparametersincircuitdesign.
T
C
m
V
I
g =
VisualizationofTransconductance
EE105Spring2008 Lecture4,Slide14 Prof.Wu,UCBerkeley
g
m
canbevisualizedastheslopeofI
C
versusVBE.
AlargeI
C
hasalargeslopeandthereforealargeg
m
.
SmallSignalModel:Derivation
EE105Spring2008 Lecture4,Slide15 Prof.Wu,UCBerkeley
Smallsignalmodelisderivedbyperturbingvoltage
differenceeverytwoterminalswhilefixingthethird
terminalandanalyzingthechangeincurrentofall
threeterminals.Wethenrepresentthesechanges
withcontrolledsourcesorresistors.
SmallSignalModel:V
BE
Change
EE105Spring2008 Lecture4,Slide16 Prof.Wu,UCBerkeley
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EE105Fall2007 5
SmallSignalModel:V
CE
Change
EE105Spring2008 Lecture4,Slide17 Prof.Wu,UCBerkeley
Ideally,V
CE
hasnoeffectonthecollectorcurrent.
Thus,itwillnotcontributetothesmallsignalmodel.
ItcanbeshownthatV
CB
hasnoeffectonthesmall
signalmodel,either.
SmallSignalExampleI
= =
1
C
I
g
EE105Spring2008 Lecture4,Slide18 Prof.Wu,UCBerkeley
Here,smallsignalparametersarecalculatedfromDC
operatingpointandareusedtocalculatethechange
incollectorcurrentduetoachangeinV
BE
.
= =

= =
375
75 . 3
m
T
C
m
g
r
V
g

SmallSignalExampleII
EE105Spring2008 Lecture4,Slide19 Prof.Wu,UCBerkeley
Inthisexample,aresistorisplacedbetweenthe
powersupplyandcollector,therefore,providingan
outputvoltage.
ACGround
Sincethepowersupplyvoltagedoesnotvarywith
time,itisregardedasagroundinsmallsignal
analysis.
EE105Spring2008 Lecture4,Slide20 Prof.Wu,UCBerkeley
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EE105Fall2007 6
EarlyEffect
EE105Spring2008 Lecture4,Slide21 Prof.Wu,UCBerkeley
TheclaimthatcollectorcurrentdoesnotdependonV
CE
isnot
accurate.
AsV
CE
increases,thedepletionregionbetweenbaseand
collectorincreases.Therefore,theeffectivebasewidth
decreases,whichleadstoanincreaseinthecollectorcurrent.
EarlyEffectIllustration
EE105Spring2008 Lecture4,Slide22 Prof.Wu,UCBerkeley
WithEarlyeffect,collectorcurrentbecomeslarger
thanusualandafunctionofV
CE
.
EarlyEffectRepresentation
EE105Spring2008 Lecture4,Slide23 Prof.Wu,UCBerkeley
EarlyEffectandLargeSignalModel
EE105Spring2008 Lecture4,Slide24 Prof.Wu,UCBerkeley
Earlyeffectcanbeaccountedforinlargesignalmodel
bysimplychangingthecollectorcurrentwitha
correctionfactor.
Inthismode,basecurrentdoesnotchange.
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EE105Fall2007 7
EarlyEffectandSmallSignalModel
EE105Spring2008 Lecture4,Slide25 Prof.Wu,UCBerkeley
C
A
T
BE
S
A
C
CE
o
I
V
V
V
I
V
I
V
r =

=
exp
SummaryofIdeas
EE105Spring2008 Lecture4,Slide26 Prof.Wu,UCBerkeley