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2SK3065

Transistors

Small switching (60V, 2A)


2SK3065
!External dimensions (Units : mm)

Drain current
Reverse drain
current

4.0+0.5
0.3
2.5+0.2
0.1
1.00.3

Symbol

Limits

Unit

VDSS

60

V
V

VGSS

20

Continuous

ID

Pulsed

IDP1

Continuous

IDR

Pulsed

IDRP1

C
C

Total power dissipation(Tc=25C)

PD

Channel temperature

Tch

8
0.5
22
150

Storage temperature

Tstg

55+150

Gate
Protection
Diode

Min.

Typ.

Max.

Unit

10

V(BR)DSS

60

ID = 1mA, VGS = 0V

IDSS

10

VDS = 60V, VGS = 0V

Gate threshold voltage

VGS(th)

0.8

1.5

VDS = 10V, ID = 1mA

Static drain-source on-state


resistance

RDS(on)

0.25

0.32

ID = 1A, VGS = 4V

RDS(on)

0.35

0.45

ID = 1A, VGS = 2.5V

Forward transfer admittance

Yfs

1.5

ID = 1A, VDS = 10V

Input capacitance

Ciss

160

pF

VDS = 10V

Output capacitance

Coss

85

pF

VGS = 0V

Reverse transfer capacitance

Crss

25

pF

f = 1MHz

Turn-on delay time

td(on)

20

ns

ID = 1A, VDD

tr

50

ns

VGS = 4V

td(off)

120

ns

RL = 30

tf

70

ns

RG = 10

Rise time
Turn-off delay time
Fall time

Pw 300s, Duty cycle 1%

Source

A protection diode has been built in between the


gate and the source to protect against static
electricity when the product is in use.
Use the protection circuit when rated voltages are
exceeded.

IGSS

Zero gate voltage drain current

(1) Gate
(2) Drain
(3) Source

Abbreviated symbol : KE

Symbol

Drain-source breakdown voltage

0.4+0.1
0.05
0.40.1
1.50.1

Gate

!Electrical characteristics (Ta = 25C)


Parameter

(3)

0.50.1

Drain

1 Pw 10s, Duty cycle 1%


2 When mounted on a 40 40 0.7 mm alumina board.

Gate-source leakage

(2)

!Internal equivalent circuit

!Absolute maximum ratings (Ta = 25C)

Gate-source voltage

0.40.1
1.50.1

3.00.2

ROHM : MPT3
E I A J : SC-62

Drain-source voltage

1.50.1

1.60.1

(1)

!Structure
Silicon N-channel
MOS FET transistor

Parameter

4.5+0.2
0.1

0.50.1

!Features
1) Low on resistance.
2) High-speed switching.
3) Optimum for a pocket resource etc. because of
undervoltage actuation (2.5V actuation).
4) Driving circuit is easy.
5) Easy to use parallel.
6) It is strong to an electrostatic discharge.

Test Conditions
VGS = 20V, VDS = 0V

30V

2SK3065
Transistors
!Packaging specifications
Package
Type

Taping

Code

T100

Basic ordering unit


(pieces)

1000

2SK3065

!Electrical characteristic curves


10

Pw=10ms

0.1

DC OPERATION

0.01

2V
1

Ta=25C
Single Pulsed

25

50

75

100

125

150

0.001
0.1

175

GATE THRESHOLD VOLTAGE : VGS(th)(V)

VDS=10V
Pulsed

Ta=25C
25C
75C
125C

0.1
0

GATE THRESHOLD VOLTAGE : VGS(th)(V)

Fig.4 Typical Transfer Characteristics

0
0

100

Fig.3

2
10mA
1
ID=1mA

0
50 25

25

50

75

100

125

CHANNEL TEMPERATURE : Tch(C)

Fig.5

Gate Threshold Voltage vs.


Channel Temperature

150

10

Typical Output Characteristics

10

VDS=10V

5
DRAIN-SOURCE VOLTAGE : VDS(V)

Fig.2 Maximum Safe Operating Area

Total Power Dissipation vs.


Case Temperature

10

10

DRAIN-SOURCE VOLTAGE : VDS(V)

AMBIENT TEMPERATURE : Ta(C)

Fig.1

VGS=1.5V

STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on)()

0
0

DRAIN CURRENT : ID(A)

Ta=25C
Pulsed

4V
3.5V
3V
2.5V

1ms

DRAIN CURRENT : ID(A)

When mounted on a 40 x 40 x 0.7 mm


aluminum-ceramic board.

100s

Operating in this
area is limited by
RDS(on)

DRAIN CURRENT : ID(A)

TOTAL POWER DISSIPATION : PD(W)

VGS=4V
Pulsed

Ta=125C
75C
25C
25C

0.1
0.01

0.1

DRAIN CURRENT : ID(A)

Fig.6 Static Drain-Source OnState Resistance vs.


Drain Current()

10

2SK3065
Transistors

Ta=125C
75C
25C
25C

0.1

2A
0.5
ID=1A

0.25

0
0

10

REVERSE DRAIN CURRENT : IDR(A)

FORWARD TRANSFER ADMITTANCE : | Yfs |(S)

Ta=25C
25C
125C
75C

0.1

0.4

Fig.11

0.8

1.2

Ciss
100
Coss

Crss

10

100

VDD 30V
VGS=4V
RG=10
Ta=25C
Pulsed
td(off)

100
tf
tr

10
0.1

DRAIN-SOURCE VOLTAGE : VSD(V)

Fig.13

Typical Capacitance vs.


Drain-Source Voltage

10

DRAIN CURRENT : ID(A)

Fig.14

50

75

100

125

150

Static Drain-Source OnState Resistance vs.


Channel Temperature

4V
1
VGS=0V

0.1

0.4

0.8

1.2

1.6

SOURCE-DRAIN VOLTAGE : VSD(V)

td(on)

1
0

25

Ta=25C
Pulsed

0.01
0

1.6

Fig.12

Reverse Drain Current vs.


Source-Drain Voltage()

1000

SWITCHING TIME : t(ns)

CAPACITANCE : C(pF)

Ta=125C
75C
25C
25C

0.1

10

SOURCE-DRAIN VOLTAGE : VSD(V)

VGS=0V
f=1MHZ
Ta=25C

10

Fig.9

VGS=4V
Pulsed

0.01
0

10

Forward Trasfer Admitance vs.


Drain Current

1000

ID=1A

CHANNEL TEMPERATURE : Tch(C)

DRAIN CURRENT : ID(A)

Fig.10

2A

0
50 25

20

Static Drain-Source OnState Resistance vs.


Gate-Source Voltage

10

VDS=10V
Pulsed

0.1
0.01

Fig.8

Static Drain-Source OnState Resistance vs.


Drain Current()

10

15

VGS=4V
Pulsed

0.5

GATE-SOURCE VOLTAGE : VGS(V)

DRAIN CURRENT : ID(A)

Fig.7

10

REVERSE DRAIN CURRENT : IDR(A)

0.1
0.01

0.75

Switching Characteristics

(a measurement circuit diagram Fig.17 , it refers 18 times)

Reverse Drain Current vs.


Source-Drain Voltage()

1000
REVERSE RECOVERY TIME : trr(ns)

Ta=25C
Pulsed

STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on)()

VGS=2.5V
Pulsed

STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on)()

STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on)()

10

di/dt=50A/s
VGS=0V
Ta=25C
Pulsed

100

10
0.1

1
REVERSE DRAIN CURRENT : IDR(A)

Fig.15

Reverse Recovery Time vs.


Reverse Drain Current

10

2SK3065
Transistors

NORMALIZED TRANSIENT
THERMAL RESISTANCE : r(t)

10

D=1

0.5

0.2
0.1 0.1
0.05
0.02

When mounted on a 40 x 40 x 0.7 mm


aluminum-ceramic board.

0.01

Ta=25C
th (ch-c) (t) = r (t) th (ch-c)
th (ch-c) =62.5C/W

0.01
Single pulse

PW
T

0.001
100

1m

10m

100m

D= PW
T

10

100

PULSE WIDTH : PW(s)

Fig.16

Normarized Transient Thermal Resistance vs. Pulse Width

!Switching characteristics measurement circuit


Pulse width

VGS

RG

ID
D.U.T.

VDS

VGS

90%

50%
10%

RL

50%

10%

VDS

10%

VDD

90%

90%
tr

td(on)
ton

Fig.17 Switching Time Test Circuit

td(off)

tf
toff

Fig.18 Switching Time Waveforms