Example 7.

Solution

Calculate the drain current of a silicon nMOSFET with VT = 1 V,

W = 10 m, L = 1 m and t ox = 20 nm. The device is biased with
VGS = 3 V and VDS = 5 V. Use the quadratic model, a surface
mobility of 300 cm2 /V-s and set VBS = 0 V.
Also calculate the transconductance at VGS = 3 V and VDS = 5 V
and compare it to the output conductance at VGS = 3 V and VDS =
0 V.
The MOSFET is biased in saturation since VDS > VGS - VT.
Therefore the drain current equals:
2
W (VGS VT )
I D = n C ox
L
2
3.9 8.85 10 14 10 ( 3 1) 2
= 300

= 1.04 mA
1
2
20 10 7
The transconductance equals:
W
g m = n Cox (VGS VT )
L
3.9 8.85 10 14 10
= 300
(3 1) = 1.04 mS
1
20 10 7
and the output conductance equals:
W
g d = n C ox (VGS VT VDS )
L
3.9 8.85 10 14 10
= 300
(3 1 0) = 1.04 mS
1
20 10 7