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  • IGBT: Insulated-Gate Bipolar Transistor: - Combination BJT and MOSFET

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    Oza Ricky AndIka
    16 Ansichten15 Seiten
    The Insulated-Gate Bipolar Transistor (IGBT) is a semiconductor device that combines the high input impedance of a MOSFET and the low conduction losses of a bipolar junction transistor. It has high voltage and current ratings and is used as an electronic switch in many power electronics applications. The IGBT functions by inducing a conducting channel when the gate-emitter voltage exceeds the threshold voltage, allowing for electron injection from the PNP transistor and current flow through the NPN transistor.

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    The Insulated-Gate Bipolar Transistor (IGBT) is a semiconductor device that combines the high input impedance of a MOSFET and the low conduction losses of a bipolar junction transistor. It has high voltage and current ratings and is used as an electronic switch in many power electronics applications. The IGBT functions by inducing a conducting channel when the gate-emitter voltage exceeds the threshold voltage, allowing for electron injection from the PNP transistor and current flow through the NPN transistor.

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    16 Ansichten15 Seiten

    IGBT: Insulated-Gate Bipolar Transistor: - Combination BJT and MOSFET

    Hochgeladen von

    Oza Ricky AndIka
    The Insulated-Gate Bipolar Transistor (IGBT) is a semiconductor device that combines the high input impedance of a MOSFET and the low conduction losses of a bipolar junction transistor. It has high voltage and current ratings and is used as an electronic switch in many power electronics applications. The IGBT functions by inducing a conducting channel when the gate-emitter voltage exceeds the threshold voltage, allowing for electron injection from the PNP transistor and current flow through the NPN transistor.

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    von 15

    IGBT: Insulated-Gate Bipolar Transistor

    Combination BJT and MOSFET


    High Input Impedance (MOSFET)
    Low On-state Conduction Losses (BJT)

    High Voltage and Current Ratings


    Symbol

    ECE 442 Power


    Electronics

    Cross-Sectional View of an IGBT


    Metal

    Silicon Dioxide

    Metal

    ECE 442 Power


    Electronics

    IGBT Equivalent Circuit for VGE<VT


    +
    IBPNP

    VCC

    IEPNP

    ICNPN
    IBNPN

    Leakage Current

    ICPNP

    Both transistors are OFF


    IENPN

    IRBE

    ECE 442 Power


    Electronics

    IGBT Equivalent Circuit for VGE>VT


    +
    PNP transistor turns ON,

    VCC

    RMOD decreases due to


    carrier injection from the
    PNP Emitter.
    NPN Transistor
    becomes forward
    biased at the BE,
    drawing current
    from the Base of
    the PNP transistor.

    MOS transistor conducts,


    drawing current from the
    Base of the PNP transistor.

    ECE 442 Power


    Electronics

    Channel is Induced When VGE>VT

    RMOD

    PNP
    electrons

    NPN

    RBE
    Induced Channel

    ECE 442 Power


    Electronics

    IGBT Output Characteristics

    Follows an SCR
    characteristic

    ECE 442 Power


    Electronics

    IGBT Transfer Characteristic

    ECE 442 Power


    Electronics

    IGBT Used as a Switch

    ECE 442 Power


    Electronics

    Fairchild FGA25N120AND IGBT

    ECE 442 Power


    Electronics

    ECE 442 Power


    Electronics

    10

    ECE 442 Power


    Electronics

    11

    ECE 442 Power


    Electronics

    12

    ECE 442 Power


    Electronics

    13

    ECE 442 Power


    Electronics

    14

    ECE 442 Power


    Electronics

    15

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