Graphene Electronics

RAJEN KUMAR PATRA

ROLL NO.-13-4EC62D02
MICROELECTRONICS &VLSI DESIGN
E&ECE DEPARTMENT
IIT KHARAGPUR

Contents
Why Graphene ?
Structure
Fabrication technology
Grapheme Based Devices
Challenges
Conclusion
Acknowledgement

Why Graphene?
Si technology tending towards its
scaling limits.
For RF apps HEMTs (III-V group) are
too expensive.
Very high mobility of graphene.
Light weight and size compare to Si.
High saturation velocity
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GRAPHENE: Structure
Hexagonal structural element of some
carbon allotropes including graphite,
charcoal, carbon nanotubes and fullerenes
Each atom forming 3 bonds with each of
its nearest neighbors known as the sigma
bonds.

a) Fullerene b) Nanotub
c) Graphite
Fourth valence electron is in the 2pz state

oriented perpendicular to the sheet of

graphite
forms a conducting sigma bond.
Two dimensional sp2 hybridized forms of
carbon
Zero band gap semiconductor with 2 Honey comb structure of
Graphene
linearly

GRAPHENE: Poperties
ELECTRONIC PROPERTIES
High Electron Mobility at room temperature,
with reported values in excess of 15,000 cm/Vs.
Intrinsic graphene is a zero-gap semiconductor
Low resistivity and better current capacity & temperature conductivity
Graphene is estimated to operate at terahertz frequencies
i.e. trillions of operations per second.
OPTICAL PROPERTIES
An unexpectedly high opacity for an atomic
monolayer,
it absorbs = 2.3% of white light,
where is the fine-structure constant.
MECHANICAL PROPERITIES
Strongest materials ever tested
Breaking strength 200 times greater than steel, a bulk
strength of130GPa.

Fabrication
Technology
Mechanical

exfoliation of
graphite on SiO2/Si

A.

B.

A)Thin film of graphene of 1cm size.

B)Raman spectra of large area graphe

on SiO

D. Reddy, L.F. Register, G.D. Carpenter, S.K. Banerjee.,Graphene field-effect transistors,

D: Appl. Phys., 44, P. 313001 (20p.) (2011).
6

AdvantageVery easy method.

Few layer graphene can be obtained
Graphene flakes upto 1mm2 is
achievable
DisadvantageTime consuming
Flakes can occur in arbitrary shape &
Location.
Poor quality

Fabrication
Technology
Confinement Controlled
Sublimation of Silicon Carbide
(A) SiC wafer in
UHV
(B)The CCS method
(C) Photograph of the
induction furnace

(D)few layer graphite (FL

from 1 to 10 layers,
multilayer epitaxial graphene (MEG, from 1 to 1
layers)
W. A. de Heer et al, Large Area and Structured Epitaxial Graphene
Produced by Confinement Controlled Sublimation of Silicon Carbide,
Proceedings National Academy of Sciences USA, Vol. 108, No. 41, 2011

AdvantagesNo. of layer is controllable .

Better quality than mechanical
exfoliation.
Less time consuming.
DisadvantagesHigh temperature up to 1400C
required.
Ultra high vacuum is required

Band Diagram of
Graphene

Fig:- schematic of Band energy

diagram

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Available online :- http://www.lbl.gov/publicinfo/newscenter/pr/2008/ALS-graphene-electrons.

Conductance profile
1)Min. conductivity is a result
of charge inhomogeneity in
the form of Electron hole
puddle.
2.) Electrical thermal
annealing
improves the conductivity
by
removing the residual
impurities
FIG- blue curve- conductance before annealing
on the surface of
red curve conductance after annealing
graphene

D. Reddy, L.F. Register, G.D. Carpenter, S.K. Banerjee.,Graphene field-effect

11
transistors,J. Phys. D: Appl. Phys., 44, P. 313001 (20p.) (2011).

Graphene Field Effect Transistor

Fig- Basic Structure of GFET

Available online : www.sciencedirect.com

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Transfer characteristic
comparision

Fig- Transfer charc. of GFET

Fig- Transfer char. of NMOS

D. Reddy, L.F. Register, G.D. Carpenter, S.K. Banerjee.,Graphene field-effect

transistors,J. Phys. D: Appl. Phys., 44, P. 313001 (20p.) (2011).

13

Output Characteristic
Comparison

Fig- output char. For GFET

Fig- output char. of

PMOS

Avilable online at: www.sciencedirect.com

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Graphene CMOS

FIG:-Integrated complementary
graphene inverter
a)Schematic of a CMOS
transistor
b)SEM image of the fabricated
inverter
Traversi
F, Russo
V and Sordan R 2009 Integrated complementary
c)Circuit
layout

graphene inverter

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AdvantageViable alternate of Si for the

channel of FETs @ Sub-10nm
scale,
Very high operational speed
Can be adjusted upto 4.5GHz
DisadvantageInability of FETs to get turn off.
Always a constant power
dissipation
Inability of cascading

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Graphene based logic

gates

Fig:
Fig:
2 i/p logic gate incoporating
Transfer curve R
v/s Vg of a
one monolayer graphene
mono-layer
graphene
transistor
Roman Sordan et al., Logic Gates with a single graphene
.
transistor", Applied Physics Letters 94, 073305 (2009)

POTENTIAL APPLICATIONS OF GRAPHENE

Electronics engineering as component

material.
Transparent conducting electrodes
Solar cells
Graphene biodevices
Graphene-based sensors
Touchscreens (Graphene Display)
Energy Storage Device
Integrated circuit

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Conclusion
Zero bandgap semiconductor(not
suitable for logic application)
Large area graphene channels
cant be switched off.
Nanoribbon graphene has serious
fabrication issues
Lack of mathematical proofs of
most of the properties.

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REFERENCES
A. K. Geim and K. Novoselov, The Rise of Graphene,
Nature Materials, vol. 6, pp. 183191, 2007.
A. K. Geim, Graphene: Status and Prospects, Science,
vol. 324, no. 5934, pp. 15301534, 2009.
W. A. de Heer, C. Berger, M. Ruan, M. Sprinkle, X. Li, Y. Hu,
B. Zhang, J. Hankinson and E. H. Conrad, Large Area and
Structured Epitaxial Graphene Produced by Confinement
Controlled Sublimation of Silicon Carbide, Proceedings
National Academy of Sciences USA, Vol. 108, No. 41, 2011,
pp. 16900-16905.
K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y.
Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov,
Electric field effect in atomically thin carbon films,
Science, vol. 306, no. 5696, pp. 666669, Oct. 2004
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REFERENCES
D. Reddy, L.F. Register, G.D. Carpenter, S.K.
Banerjee.,Graphene field-effect transistors,J. Phys. D:
Appl. Phys., 44, P. 313001 (20p.) (2011).
Lemme M C, Echtermeyer T J, Baus M and Kurz H 2007
A graphene field-effect device, IEEE Electron Device
Lett.28 2824
Roman Sordan et al., Logic Gates with a single graphene
transistor,",Applied Physics Letters 94, 073305 (2009)
Traversi F, Russo V and Sordan R 2009 Integrated
complementary graphene inverter, Appl. Phys. Lett. 94
223312

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Acknowledgement
I

am sincerely thankful to To
Prof. P.K BASU

Prof. C.K MAITI

Prof. D Biswas.

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Thank you

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