IEN T C

BAN

GIAO TRNH

ai hoc Quoc gia TP.HCM

ai hoc Khoa hoc T nhien
Khoa Vat Ly Bo mon ien t

Bien soan: Nguyen thanh

Long

Chng 2
I. Cac loai diod
* Diod chnh lu
* Diod cao tan, tach song
* Diod Schokley
* Diod Zener
* Diod bien dung
* Diod quang
* LED, Optron
* Diod hong ngoai
* Diod LASER

1.Diod chnh lu

ien the ln
Dong ien ln
Nen diod chnh lu :
Tiep xuc mat
Hoat ong tan so thap (ha
tan)
S dung diod can tham khao
bang Data:
PDM, IFM, IRM,VBR, CD,CT, fmax, Tmax

2.Diod cao tan

Tiep xuc iem CD,CT nho

Nhng do o:
ien the thap
Dong ien thap
S dung trong:
Mach tach song Radio, TV
Mach logic, mach so ( mach
giao hoan)

4.Diod Zener
Tao ien the on nh ( ap dung
hieu ng huy thac).
Moi diod zener co tr so Vz khac
nhau 3,3 V; 3,9 V; 5,1V; 5,6V; 6,8V; 7,5V;
10V; 12V. (tuy theo cach che tao
va mat o pha ).
Khi s dung phai tuan theo Datasheet:
IZk < IZ < IZM
PZ = VZIZ < PZM

ac tuyen Diod Zener

Vz
V

PZM=VzIzM

Izk < Iz< IZM

I
0
Izk
Iz
IzM

5.Diod bien dung( Varicap

Diod;Varactor)
S dung ien dung chuyen tiep khi phan
cc nghch noi pn.
ien dung diod bien dung:
CT

CT

V R
1

Thng n = 1;

CT (0) in dung ti VR = 0 V

Ap dung trong cac mach:

Dao ong cong hng, mach ieu hp
trong TV, Radio
Mach ieu khien t xa
Mach chon ai t ong

Net Space
Charge Density
eN

D io d e v o lta g e = -V r
d Q = In c r e m e n ta l c h a r g e

D i o d e v o l t a g e = - ( V r+ d V r)

(a )

x
S p a c e c h a r g e r e g io n
eN

(b )

( 1 0 - 1 0 3 ) p F /m m

dep

Reverse Forward

D io d e V o lta g e

Vo

Fig.6.12: The depletion region behaves like a capacitor. (a) The

charge in the depletion region depends on the applied voltage just as
in a capacitor (b) The incremental capacitance of the depletion region
increases with forward bias and decreases with reverse bias. Its vaue
is typically in the range of picofarads per mm2 of device area.
From Principles of Electronic Materials and Devices, Second Edition, S.O. Kasap ( McGraw-Hill, 2002)
http://Materials.Usask.Ca

3.Diod Schottky
Tiep giap kim loai- ban danbc
tng am va hat tai nong
Rao the thap 0,25 V
Thi gian tch tr khong ang ke t s=
0
Thi gian hoi phuc be
ien dung tch tr vai phan mi pF
S dung trong cac mach giao hoan,
mach logic, mach so, mach tan so
cao 20 GHz

6. Diod quang (thu quang) Photodiode

Ap dung hieu ng quang ien
cua cac vat lieu Si, GaAs
Chuyen oi anh sang thu c t
be mat trong suot thanh dong
ien khi diod phan cc nghch.
Moi diod ch thu c mot bc xa
nhat nh.
S dung trong cac mach:
Bao ong
o cng o sang
em san pham

EHPs
e x p (x )

Lh

Le
Iph

Fig. 6.51: Photogenerated carriers within the volume Lh + W + Le

give rise to a photocurrent Iph. The variation in the photegenerated
EHP concentration with distance is also shown where is the
absorption coefficient at the wavelength of interest.
From Principles of Electronic Materials and Devices, Second Edition, S.O. Kasap ( McGraw-Hill, 2002)
http://Materials.Usask.Ca

N e u tra l
n -re g io n

D rift

L ong

N e u tra l
p -re g io n

Eo

D iffu s io n

M e d iu m

B ack
e le c tro d e

S h o rt
F in g e r
e le c tro d e

D e p le tio n
re g io n
n

W
V oc

Fig. 6.49: The principle of operation of the solar cell (exaggerated

features to highlight principles)
From Principles of Electronic Materials and Devices, Second Edition, S.O. Kasap ( McGraw-Hill, 2002)
http://Materials.Usask.Ca

7.Diod phat quang (LED)

Ap dung hieu ng ien quang
LED phat sang khi phan cc thuan
Moi LED phat mot bc xa nhat nh
tuy theo vat lieu che tao va chat pha:
GaAs
bc song= 0,77-0,88 o
Al,Sb
= 0,65
GaAsP
o
GaPZn
ho
phach
GaAsS
= 0,57-0,58 vang
GaPN2
= 0.55-0,56 luc

L ig h t o u tp u t

p
n+

E p ita x ia l la y e rs

n+
S u b s tra te

Fig. 6.44: A schematic illustration of one possible LED device

structure. First n+ is epitaxially grown on a substrate. A thin p layer
is then epitaxially grown on the first layer.
From Principles of Electronic Materials and Devices, Second Edition, S.O. Kasap ( McGraw-Hill, 2002)
http://Materials.Usask.Ca

Ec

Eg
Ev

( a ) G a A s 1 -y P y y < 0 . 4 5

(b ) N d o p e d G a P

Fig. 6.45: (a) Photon emission in a direct bandgap semiconductor.

(b) GaP is an indirect bandgap semiconductor. When doped with
nitrogen there is an electron recombination center at EN. Direct
recombination between a captured electron at EN and a hole
emits a photon.
From Principles of Electronic Materials and Devices, Second Edition, S.O. Kasap ( McGraw-Hill, 2002)
http://Materials.Usask.Ca

Mach LED
LED dan co : VD = 1,6V 2,2V; ID = 5 30mA
Chon trung bnh: VD = 2V va ID = 10 mA
Mach co ien tr RD noi vi LED vi nguonVcc,cach
tnh tr RD tuy theo tr so nguon Vcc:

+ Vcc
RD

V CC R D I D V
V CC V D

RD
ID

ID
Vcc = 5V RD = 200 Ohm Chon 270 hoac 330 Ohm
= 9V
= 700 Ohm Chon 680
= 12V
= 1000 Ohm

VD

p
A lG a A s

(a )

p
A lG a A s

G aA s

~ 0 .2 m

E le c tr o n s in C B

EF
Ec

eV

Ec
c

2 eV

1 .4 e V

N o b ia s

EF
Ev

2 eV

(b )

H o le s in V B

W ith f o r w a r d b ia s
(c )

(d )
A lG a A s

G aA s

A lG a A s

F ig . 6 :4 6 : (a ) A d o u b le h e te r o s tr u c tu r e d io d e h a s tw o j u n c tio n s w h ic h
a r e b e tw e e n tw o d if f e r e n t b a n d g a p s e m ic o n d u c to r s ( G a A s a n d
A lG a A s ). (b ) A s im p lif ie d e n e r g y b a n d d ia g r a m w ith e x a g g e ra te d
fe a tu re s . E F m u s t b e u n ifo rm . (c ) F o rw a rd b ia se d s im p lifie d e n e rg y
b a n d d ia g r a m . ( d ) F o r w a rd b ia s e d L E D . S c h e m a tic illu s tra tio n o f
p h o to n s e s c a p in g re a b s o r p tio n in th e A lG a A s la y e r a n d b e in g e m itte d
fro m th e d e v ic e .
From Principles of Electronic Materials and Devices, Second Edition, S.O. Kasap ( McGraw-Hill, 2002)
http://Materials.Usask.Ca

Current

Ge

Si GaAs

~0.1mA
0 0.2 0.4 0.6 0.8 1.0

Voltage

Fig.6.4: Schematic sketch of the I-V characteristics of Ge, Si

and GaAs pn Junctions
From Principles of Electronic Materials and Devices, Second Edition, S.O. Kasap ( McGraw-Hill, 2002)
http://Materials.Usask.Ca

 LED ap dung trong cac mach:

Ch bao, hien th
LED 7 oan trong cac
mayphat , may o
Diod phat thu hong ngoai
La nhng diod phat- diod thu
quang vi bc xa trong lanh
vc hong ngoai .( bc song
khoang1.000nm)
c s dung trong cac mach
bao ong , ieu khien, phat
thu tn hieu, d lieu co tnh
bao mat.

8.Diod LASER
Diod khuech ai anh sang bang bc
xa cua phat xa kch thch ( Light
Amplication by StimulatedEmission of
Radiation LASER).
Giong nh diod noi nhng co them bo
phan lam ao mat o dan so va
cong hng tao ra anh sang ket hp
co cng o ln va bc xa thanh
chum tia tap trung rat nho.
Ap dung trong thong tin si quang,
kenh khong gian(khong giay), trong
cac may CD, VCD, DVD, mang may tnh

D ie le c tric m irro r

C u rre n t

O p tic a l c a v ity
c o n ta in in g
a c tiv e la y e r

P o lis h e d f a c e
D ie le c tric m irro r
F a b ry -P e ro t c a v ity

L e n g th , L
H e ig h t, H

W id th W

D iffra c tio n
lim ite d la s e r b e a m

Fig. 6.56: A semiconductor lasers have an optical cavity to

build-up the required electromagnetic oscillations.
From Principles of Electronic Materials and Devices, Second Edition, S.O. Kasap ( McGraw-Hill, 2002)
http://Materials.Usask.Ca

Bo ghep
quang(Optrons;Optoisolators;Optocoupler
Ghep noi LED vas)
linh kien thu quang
vao chung trong mot vo kn nham
truyen tn hieu co tn bao mat hoac
co o cach ly ien tot hn bien the (
1015 Ohm; 7.500V ), tranh nhieu ien t
xen vao tn hieu, d lieu truyen i.
Cac linh kien thu quang la : diod,
transistor, FET, SCR,DIAC quang

LED
photodiod

Diod quang (thu);

Cac mach diod

I. Mach chnh lu
1.Chnh lu ban ky( H.1)
VDC
0

II

2II

Vi
= Vpsinwt

+
VODC
-

IL
RL

Cac cong thc

1 T
1 2
V LDC 0 v idt
V
p sin td (t )

T
2 0
2
Vp

sin td t 0d t

2 0

Vp
Vp
Vp

cos t 0
1 1
2
2

Vp
0,318V p 0, 45V Lhd
V LDC

Vp
*V LDC
0,318(V p V D )

2.Chnh lu toan ky
( toan song)
a. Chnh lu toan ky 2
diod
D1
n1: n2

i1
VL

Vip

i2
RL

Vip
D2

Cong thc chnh lu

toan ky
1
1
V v dt V sin td (t )
T
2
T

LDC

2
Vp

sin tdt sin tdt

2 0

2
Vp
2V p
2V p

cos t 0 ( cos t
1 1
2
2

2V p
0,636V p 0,9V Lhd
V LDC

2(V p V D)
*V LDC
0,636(V p V D)

b.Cau chnh lu
( 4Diod)
Xet mach chnh lu toan
Bridge
ky 4 diod
:
Viac
=Vpsinwt
50Hz

D4

D3

D1

D2 VoDC

ILDC
RL

Ban ky dng
VL
IL1

VD1
0

VD3 RL

II

Ban ky am
0
2II

VD4
RL
IL2

VD2

II

3.Cach hoat ong cua

mach :
Mach c s dung khi chnh lu
trc tiep t nguon ien cung
cap, hoac khi cuon th cap
khong co iem gia.
Ban ky dng: Diod D1 va D3
phan cc thuan nen dan ,D2 va
D4 phan cc nghch nen ngng.Co
dong i1 qua diod D1 tai RL D3 .
Ban ky am: Diod D2 va D3 phan
cc thuan nen dan.D1 va D3
ngng. Co dong i2 qua D2-RL-D4.
Cong thc
V LDC: V ODC 2 V ip 2V D / 2V ip /

Mach ien

chnh lu bn k c
loc

D
VoDC

Viac

50Hz

=Vpsinwt

ILDC

C
RL

3.Mach loc
a. Mach loc trong chnh lu
ban ky

Do tu loc co tr so ln,nen dang

song nap nhanh va xa cham , nen
dang song ra kha thang ( phang)
Ta co hnh ve sau ( vi cach ve
phong ai):

Vcmax =Vp
Vrp Vrpp

II

Vcmin VLDC

4II

Cong thc chnh lu

va loc
Theo hnh ve ta co :
V
V
c max
c min
V LDC
2
V rpp V c max V c min

Vi ien the tu xa cho bi:

t
t R LC

VC

V pe

V pe

Do thi hang
ratln
Rnen
LC
ta co T2/ RLC rat be, ta co
the khai trien theo cap so
TaTaylor
co: vi bien x be nh2 sau

1 T 2
T

2
V p 1

C
2!
R
L

R LC

V C T 2 V c min T 2

...
;

T
2
V p 1

C
R

ien the trung bnh ngo ra:

V LDC

V p V p 1 T 2
2

R LC 1 T 2
V p

C
2R L

*Va tnh c ien the dn

song nh nh:
Va tr so nh ien the
dn song( bn k):
V rpp V p V
V rp

1 T 2

R LC

T2

R LC

V rpp V pT 2

2
2 R LC

Do thi gian xa T2 rat ln

1 chu
0,ta
01

xem
nh
bang
ky
T,

V
V
V

2
f
C
C
R
R

c( T = 1/f =
1/50
):
0, 01
LDC

rp

2 f R LC

V
R LC

b.Mch loc trong chnh lu

toan ky
Tng t ta co:
Bridge

Viac
=Vpsinwt

D3

D2

ILDC

VoDC
+

50Hz

D4

D1

C
RL

Ta co dang song ngo ra:


Dang song ngo ra mach
chnh lu
va loc toan ky:
Vcmax = Vp Vrp Vrpp

VLDC T2 =T Vcmin

Do thi gian xa ien gan bang

na chu ky
T2 = T/2 = 1/2f nen thay vao
cong thc tren ta co ket
qua:
ien the trung
bnh ngo ra:
V

LDC

V rp V

1
0, 005

V p
p

4
f
C
C
R
R
L

0, 005V p
1

4 f R LC
R LC

Tr so nh ien the dn
0, 005V p
1

V rp V p
song:
4f
C
C
RL

RL

Chu y: Khi co Vp(hay

Vop) nho, ta phai ke
en VD va thay Vop bang
( Vop):
Mach chnh
lu va loc 1 ban
ky va toan ky 2 diod:

Vop Vop=Vip VD
Mach lu toan ky 4 diod ( cau
chnh lu):

Vop Vop = Vip 2VD

Thnh phn dn sng (AC)

Tr hiu dng in th dn sng
in th x c dng sng tam gic
V rp
t
vr
T
1
V r ( hd )
T

1 V 3
V rp
T t dt T 3T t

v 2r 3
V rp

T

3
3
T
3

2
rp
2

He so dn song r
r

nh ngha:
V rhd

;
V rp
V

LDC

rhd

rhd ( bk )

rhd ( tk )

rpp

1 V pT 2

3
3 2 R LC
1
V p

3 2 f R LC

rp

1
3

V
4f

R LC

V pT 2

2 R LC

Ket qua: Vi f = 50Hz

Chnh lu ban ky:
r

1
3 2 f

5800 10 6

R LC R L()C ( F )
Chnh lu toan ky:
6
2900

1
10
r

3 4 f R LC R L ()C ( F )
0, 29
C
( F ) (tk )
R L ( r %

(bk )

(tk )

III. Bo cap ien DC

1.Bo cap ien n
gian
Mach gom cac thanh phan chu
yeu sau:

VAC

Bien the

Ch.lu

Loc

Tai

ien the
khu vc
Trong hau het cac thiet b ien
t ban dan eu s dung bien
the ha the .

Cach phan giai mach

tng t nh a khao sat
tren.
Trong thc te( thiet ke)
phai xet en cac ch tieu
ky thuat sau:

Bien the:

T so vong:

V 2 / V 1 = n 2 / n1

Dong ien : I1 / I2= n2 / n1

Cong suat : P1 = P2 V1I1 =

Diod chnh lu hoac

cau diod:
ien the cc ai, PIV
Dong ien cc ai, Isurge
Cong suat, dai nhiet o

Tu ien loc:

Tr so ien dung C
ien the lam viec ( W.V)

2.Bo cap ien on

nh n gian

a.Mach ien:
Rs
I1
ViDC

IL
Iz

Vz

VoDC
=VLDC

RL

Rs ien tr gii
han dong
R ien tr tai

Cc cng thc mch n p Zener

in th ng ra:
VODC = VLDC = VZ
Dng in:

I1 = IZ + IL IZ = I 1 - IL
I1 = (ViDC VZ) / RS
IL = VLDC / RL
Cng sut tiu tn :PZ= VZ IZ < PZM

PRS = I 12 RS
P L = V L 2 / RL

ieu kien e Zener

hoat ong
Khi cha mac diod Zener phai
co:

R
L
V LDC
V iDC V Z
RL RS

(I )

Khi co mac diod Zener , ta co:

V ODC V Z

I Zk I Z I ZM

P
ZM

VZ

( II )

ieu kien thiet ke

mach on ap
a) Chon Rs e diod Zener luon hoat ong trong 2 ieu
kien xau nhat la co cung mot luc cac trng hp
sau:

V iDC min V Z
I L max I ZK I Z min
IZ
RS
va I
:
V iDC min V Z
RS
(1)
I Z min I L max

+ ViDCmin

Lmax

+ ViDCmaz va ILmin
V iDC max V Z
I L min I Z max
IZ
RS
V iDC max V Z
RS
(2)
I Z max I L min
V iDC max V Z
V iDC min V Z
RS
1 2
I Z max I L min
I Z min I L max

2. Chon Rs khi co tai

h
Khi tai h IL=0 va do o IZ = I1max :

V iDC max V Z
I ZM
I Z I 1max
RS

Ta cung co the xet trc tiep ieu

kien cong suat :

P Z V Z I Z P ZM

Cc i lng c trng
Ta c cc nh ngha sau:
Vz
Do diod Zener thc t c in
tr rz nn in th ng ra :

V
Z
VoDC = Vz +IIzrZz (1)

thay vo
ta V
c

oDC :

VZ

Iz

VoDC

rz

V iDC V oDC
V oDC V z

IL
rZz L
cngRthc
s
1

I = I +I (2)

rz
Rs

V iDC
VZ IL
r z Rs
r z RS

(3)

Suy ra:

H s iu th:
Sv = dVODC / dViDC = [rz /( rz + Rs )]

n nh in th ra:
VR = dVODC / VODC =
= [rz /( rz + Rs )][dViDC/VODC]

Tng tr ra :
Ro = dVODC / IODC = rz // Rs=[rzRs/( rz + Rs )]

H s trut thi dn sng:

RRR(dB) = 20log(Vri / Vro) = 20log[(RS + rz)/ rz]

IV.Mch xn (ct)
1.Mch xn song song
a.Mch xn trn
1k
Vo

Vi
DIODE

sin 1/2

Vi > 0,6V: Diod dn Vo = VD = +0,6V

Vi < 0,6V: Diod ngng Vo = Vi ( bn k m)

b.Mch xn di
1k
Vo

Vi

DIODE

sin 1

Vi > 0,6V: Diod ngng Vo = Vi ( bn k dng)

Vi > 0,6V: Diod dn Vo = VD = - 0,6V

c. Mch xn trn v di
Rs
Vo

Vi

D1

D2

sin 2

Vi > 0,6V: Diod D2 dn Vo = +0,6V

Vi < 0,6V: Diod D1 dn Vo = - 0,6V

2.Mch xn dng diod Zener

a. Mch xn trn
Rs
Vo

Vi
Vz
ZENER

-0,6V

Vi > 0 : Diod Zener phn cc nghch dn hu

thc Vo = Vz
Vi < 0 : Diod Zener phn cc thun , dn nh
diod thng Vo = - 0,6V

b.Mch xn di
Rs
Vo

Vi

0,6V
ZENER
-Vz

Vi > 0 : Diod Zener phan cc

thun , dn nh diod thng
Vo = + 0,6V
Vi < 0 : Diod Zener phan cc
nghch dn hu thac Vo = - Vz

C.Mch xn trn v di
Rs
Vo

Vi
Vz1
Vz2

Vz2

- Vz1

Vi >0: Diod Zener 2 dn Vo = +Vz2

Vi< 0: Diod Zener 1 dn V0 = - Vz1

V.Mch nng
L mch cng thm thnh phn DC vo
tn hiu AC.
Mch gm C,R v diod.Thng chn thi
hng RC >> 10 T
C nhiu dng mch tu theo cch mc
diod.

1.Mch nngCin th DC dng

+19,3V

Vo
+10
D

sinus
-0,7V

-10V

bn k m, diod dnVo = - 0,7V

bn k dng tip theo diod ngng t C
np y vi in th (Vp-VD)+Vp VD =
9,3V+10 0,7 = 19,3V
in th trung bnh 10-0,7 = 9,3V

3. Mch nng c phn cc trc

C
Vo
+10

+15V
D

-10V

R
4,3V
-5V

Bn k m:Vi < - 5V, Diod ngng Vo = - (VD +VDC) = (0,7V+4,3V) = - 5V

Bn k dng tip theo: Diod ngng t np y 10V
+5V= 15V
Vy tn hiu ra vn 20Vpp nhng vi tr trung bnh +5V.
Mch thng dng nng in th thm ca tn hiu
video trong truyn hnh.

2. Mch nng in th DC m
C
Vo
+10

+0,7V
D

-10V

-19,3V

bn k dng, diod dn Vo = + 0,7V

bn k m tip theo diod ngng t C
y vi in th -[(Vp-VD)+Vp VD ]=
-(9,3V+10 0,7) = -19,3V
in th trung bnh (10-0,7) = -9,3V

3.Cng logic dng diod

a.Cng AND :

F = A.B

F = 1 khi v ch khi c 2 ng vo u mc
cao,F = 0 khi c 1 ng vo xung thp.
VCC
A
B

A
B

D1

R
Vo

D2

Vi : 1 = mc cao = 4.3 5 V
0 = mc thp = 0 0,7V

B A F
0

0 0

0
1
1

1 0
0 0
1 1

 Phn gii cng AND

B

Vo

2 diod D1, D2 u dn

0V

0V

0,7V

D1 dn, D2 ngng

0V

5V

0,7V

D1ngng, D2 dn

5V

0V

0,7V

D1 v D2 u ngng

5V

5V

5V

F= A +B

b.Cng OR:

F = 1 Khi ch cn c 1 bin ln mc cao .

A
B

A
B

Mc cao = 4,3 5 V
Mc thp = 0V

D1
Vo
D2
R

Phn gii mch cng OR

Vo

Diod D1 v D2 ngng

0V

0V

0V

D1 dn, D2 ngng

0V

5V

4,3V

5V

0V

4,3V

5V

5V

4,3V

D1 ngng, D2 dn

D1 v D2 u dn