GROWTH OF

SEMICONDUCTOR
MATERIALS
PRESENTED BY:
MAWAR OKTIVINA
(373741/PPA/04806)
I PUTU TEDY INDRAYANA (372131/PPA/04646)

PROGRAM STUDI ILMU FISIKA

UNIVERSITAS GADJAH MADA
2015

What are the

techniques?
Growing bulk single
crystals

Growth
from
Melt

TECHNIQ
UES

Czochra
lski
Method
Bridgma
n
Method
Chemical
Vapor
Deposition

Epitaxia
l Growth
Growing a thin
layer of
perfect crystal

Molecular
Beam
Epitaxy
Liquid
Phase
Epitaxy

Czochralski Method
Note:
1.Rotating velocity: -
(rot/sec)
2.Pulling velocity: 10-4 3 x
10-2 (cm/sec)
3.Control of temperature
4.Condition has to be quasistatic

Available at: www.youtube.com.

Available at: Peter Yu & Cardona

Horizontal Bridgman
Method
Benih
GaAs

Ga

Temperat
ur tungku

As

Tungku 1

Tungku 2

Tungku 3
620oC

610oC
1250o
C

Jarak dalam
tungku
Available at: Reka Rio &
Masamori Ilda (1980; pg:157)

Note:
1. Available for producing
semiconductor as result of
combination between group
II-IV or III-V
2. Temperature around the
seed crystal is below the
melting point

Horizontal Bridgman
Method
(a) Vacuum
Snealing
(b) Sintesis
Arsen yang bersifat
mudah menguap

(c) Penumbuhan
Kristal
Menarik keluar tungku

Chemical Vapor
Deposition
How does growing a thin high quality
layer on a lower quality bulk
substrate?

Available at: www.youtube.com.

Chemical Vapor
Deposition

Note:
1.For thin film of
thickness < 100 nm
2.Homo-epitaxy
3.Hetero-epitaxy
4.Temperature of
substrat is important

Available at: Peter Yu & Cardona

Fig. (a) Schematic diagram of a MOCVD apparatus . (b)

Details of two flow MOCVD machine introduced by Nakamura
and co-workers for growing GaN. (c) Schematic diagram of
the gas flows near the substrate surface

Molecular Beam Epitaxy

Note:
1.Utilizing electrons and ions as
probes to monitor the surface
and film quality during growth.

(The reflected
electron
diffraction
Pattern):
surface
geometry &
morphology

Available at: Peter Yu & Cardona

(10-7 torr)

(10-15 keV)

Cont...(Molecular Beam
Epitaxy)
Available at: Peter Yu & Cardona
(2010; pg:10)

Oscillations in the intensity of the specularly reflected electron

beam in the RHEED pattern during the growth of a GaAs or AlAs film
on a GaAs substrate.
One period of oscillation corresponds precisely to the growth of a

Liquid Phase Epitaxy

Available at: Peter Yu & Cardona

(2010; pg:14)

NOTE:
1.Growing GaAs laser diodes
2.Ga or In, is utilized as the solvent for As
3.Low cost