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Si2308DS

Vishay Siliconix

N-Channel 60-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY
VDS (V)
60

rDS(on) (W)

ID (A)

0.16 @ VGS = 10 V

2.0

0.22 @ VGS = 4.5 V

1.7

D 100% Rg Tested

TO-236
(SOT-23)

1
3

Top View
Si2308DS (A8)*
*Marking Code
Ordering Information: Si2308DS-T1

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


Parameter

Symbol

Limit

Drain-Source Voltage

VDS

60

Gate-Source Voltage

VGS

"20

Continuous Drain Current (TJ = 150_C)a

TA = 25_C

ID

TA = 70_C

Pulsed Drain Currentb

IDM

Continuous Source Current (Diode Conduction)a

IS
TA = 25_C

Maximum Power Dissipationa

PD

TA = 70_C

Operating Junction and Storage Temperature Range

Unit
V

2.0
1.6
10

1.0
1.25
0.80

TJ, Tstg

- 55 to 150

_C

Symbol

Maximum

Unit

THERMAL RESISTANCE RATINGS


Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Ambientc

RthJA

100
166

_C/W

Notes
a. Surface Mounted on FR4 Board, t = v5 sec.
b. Pulse width limited by maximum junction temperature.
c. Surface Mounted on FR4 Board
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70797
S-31725Rev. B, 18-Aug-03

www.vishay.com

Si2308DS
Vishay Siliconix

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)


Parameter

Symbol

Test Condition

Min

Typ

Max

V(BR)DSS

VDS = 0 V, ID = 250 mA

60

VGS(th)

VDS = VGS, ID = 250 mA

1.5

IGSS

VDS = 0 V, VGS = "20 V

"100

VDS = 60 V, VGS = 0 V

0.5

VDS = 60 V, VGS = 0 V, TJ = 55_C

10

Unit

Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current

IDSS

On State Drain Currenta


On-State

ID(on)
D( )

Drain Source On-State


Drain-Source
On State Resistancea
Forward Transconductancea
Diode Forward

Voltagea

VDS w 4.5 V, VGS = 10 V

VDS w 4.5 V, VGS = 4.5 V

mA

VGS = 10 V, ID = 2.0 A

0.125

0.16

VGS = 4.5 V, ID = 1.7 A

0.155

0.22

gfs

VDS = 4.5 V, ID = 2.0 A

4.6

VSD

IS = 1 A, VGS = 0 V

0.77

1.2

4.8

10

rDS(on)

nA

W
S
V

Dynamic
Total Gate Charge

Qg

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

VDS = 30 V, VGS = 10 V, ID = 2.0 A

0.8

nC

1.0

Gate Resistance

Rg

Input Capacitance

Ciss

0.5

3.3

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

15

td(on)

15

10

20

17

35

15

240
VDS = 25 V,, VGS = 0 V,, f = 1 MHz

50

pF
p

Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time

tr
td(off)

Fall Time

tf

VDD = 30 V, RL = 30 W
ID ^ 1 A, VGEN = 4.5 V, RG = 6 W

ns

Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.

www.vishay.com

Document Number: 70797


S-31725Rev. B, 18-Aug-03

Si2308DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics

12

Transfer Characteristics

12

I D - Drain Current (A)

I D - Drain Current (A)

VGS = 10 thru 5 V
4V

3V

3
TC = 125_C
25_C

1, 2 V
0

0
0

10

VDS - Drain-to-Source Voltage (V)

Capacitance

400

C - Capacitance (pF)

0.8

0.6

0.4

300
Ciss

200

100

VGS = 4.5 V

0.2

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

1.0

r DS(on) - On-Resistance ( W )

- 55_C

Coss
Crss

VGS = 10 V
0.0

0
0

12

Gate Charge

1.8
r DS(on) - On-Resistance (W)
(Normalized)

V GS - Gate-to-Source Voltage (V)

2.0

VDS = 30 V
ID = 2.0 A

18

24

30

VDS - Drain-to-Source Voltage (V)

ID - Drain Current (A)

10

12

On-Resistance vs. Junction Temperature


VGS = 10 V
ID = 2.0 A

1.6
1.4
1.2
1.0
0.8

0
0

Qg - Total Gate Charge (nC)


Document Number: 70797
S-31725Rev. B, 18-Aug-03

0.6
- 50

- 25

25

50

75

100

125

150

TJ - Junction Temperature (_C)


www.vishay.com

Si2308DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

0.6

10

r DS(on) - On-Resistance ( W )

I S - Source Current (A)

0.5

TJ = 150_C

TJ = 25_C

0.4
0.3
ID = 2.0 A

0.2
0.1
0.0

1
0.00

0.2

0.4

0.6

0.8

1.0

1.2

VSD - Source-to-Drain Voltage (V)

10

VGS - Gate-to-Source Voltage (V)

Threshold Voltage

Single Pulse Power

0.4

12
ID = 250 mA

0.2

Power (W)

V GS(th) Variance (V)

9
- 0.0
- 0.2

- 0.4
3
- 0.6
- 0.8
- 50

- 25

25

50

75

100

125

150

0.01

0.1

TJ - Temperature (_C)

100

10

Time (sec)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Normalized Effective Transient


Thermal Impedance

1
Duty Cycle = 0.5
0.2
0.1
0.1

0.05
0.02

Single Pulse
0.01
10 -4

10 -3

10 -2

10 -1

10

100

500

Square Wave Pulse Duration (sec)

www.vishay.com

Document Number: 70797


S-31725Rev. B, 18-Aug-03