MOSFET Structure

Source Gate

Drain

Gate Oxide
Field Oxide

n+
p-Si

Bulk (Substrate)

 Importance for LSI/VLSI

Low fabrication cost
Small size
Low power consumption

Applications
Microprocessors
Memories
Power Devices

Basic Properties

Unipolar device
Very high input impedance
Capable of power gain
3/4 terminal device, G, S, D, B
Two possible device types: enhancement mode; depletion
mode
Two possible channel types: n-channel; p-channel

Symbols
D

D
B

G
S

p Channel MOSFET

G
S

n Channel MOSFET

Current-Voltage Characteristic
IDS

VDS

Channel Formation
S

p-Si

VG

n-Channel

D +V

DS

I DS

Analysis: Low VDS

(A)
Q
n

TR

Qn Channel Charge
TR Channel Transit Time
L

vd
vd Drift Velocity
Qn CV
CO (VGS VT )WL

I DS

n CO (VGS VT )WL
VDS
L2

I DS n

W
C (V V )V
L O GS T DS

L2
TR
nVDS

Intermediate VDS
(B)
Source

Channel

Drain
VT

VG

VG-channel

VDS
VDS/2

Increased VDS
S

p-Si

VG

n-Channel

D +V

DS

Analysis: Intermediate VDS

VDS
Qn CO (VG VT )WL
2

First Order Approximation

Gate to Channel Voltage = VGS-VDS/2
V
W
CO VG VT DS VDS
L
2

I DS n

VDS2
W
n CO (VG VT )VDS
L
2

Extra term!

Large VDS: Saturation (C)

Source

Channel
VG-channel

VG

Drain
VDS
VT
Pinch-off

Analysis: Saturation (C)

Pinch-off

VDS ( sat ) VG VT

Substitute for VDS(sat) in equation for IDS to get IDS(sat)

I DS

VDS2
W
n CO (VGS VT )VDS
L
2

(VGS VDS ) 2
W
2
I DS ( sat ) n CO (VGS VT )

L
2

n W
2
CO VGS VT
2 L
constant

Avalanche and Punch-Through

(D)
For very large VDS, IDS increases rapidly due to drain
junction avalanche.
Can give rise to parasitic bipolar action.
In short channel transistors, the drain depletion region may
reach the source depletion region giving rise to Punch
Through.