Microelectronic Circuit Design

Fourth Edition
Solutions to Exercises
CHAPTER 6
Page 292
NM L = 0.8V 0.4V = 0.4 V | NM H = 3.6V 2.0V = 1.6 V

Page 294
V10% = VL + 0.1 (V ) = 2.6V + 0.1 0.6 (2.6) = 2.4 V

Checking : V10% = VH 0.9 (V ) = 0.6V 0.9 0.6 (2.6) = 2.4 V

V90% = VH 0.1 (V ) = 0.6V 0.1 0.6 (2.6) = 0.8 V

Checking : V90% = VL + 0.9 (V ) = 2.6V + 0.9 0.6 (2.6) = 0.8 V

V50% =

VH + VL 0.6 2.6
=
= 1.6 V | t r = t 4 t3 = 3 ns | t f = t2 t1 = 5 ns
2
2

Page 295
At P = 1 mW : PDP = 1mW (1ns) = 1 pJ
At P = 3 mW : PDP = 3mW (1ns) = 3 pJ
At P = 20 mW : PDP = 20mW (2ns) = 40 pJ

Page 297
Z = ( A + B)( B + C) = AB + AC + BB + BC = AB + BB + AC + BB + BC
Z = AB + B + AC + B + BC = B( A + 1) + AC + B(C + 1) = B + AC + B
Z = B + B + AC = B + AC

R. C. Jaeger and T. N. Blalock

08/12/10

Page 300
P
0.4mW
V VL 2.5V 0.2V
I DD =
=
= 160 A | R = DD
=
= 14.4 k
VDD
2.5V
I DD
160A
W
A W
0.2
4.44
2
1.6x104 A = 104 2 2.5 0.6
0.2 V =
2
1
V L S
L S

Page 301
V VL 3.3V 0.1V
I DD = DD
=
= 31.4A
R
102k
W
A W
0.1
2.09
31.4x106 A = 6x105 2 3.3 0.75 0.1 V 2 =
2
1
V L S
L S
Page 303

Ron
2.5V Ron = 1.84 k
Ron + 28.8k
W
W
1
2.98
=
=

1
0.15
L S
L S
104 2.5 0.60
(1.84k)
2

0.15V =

Ron =

1
1.03
0.2
6x105
3.3 0.75

2
1

= 6.61 k | VL =

6.61k
3.3V = 0.201 V
6.61k + 102k

1 V2 1 V2
=
=V

=
Kn R A V

Page 305

1.03
6.30
5
Kn R = 6x105
1.02x10 =
V
1

NM H = 3.3 0.75 +

1
3.3
1.63
= 1.45 V
6.30
2(6.30)

NM L = 0.75 +

2(3.3)
1

= 0.318 V
6.30
3(6.30)

R. C. Jaeger and T. N. Blalock

08/12/10

Page 309
Using MATLAB :
fzero(@(vh) ((vh -1.9 - 0.5* sqrt(0.6))^2 - 0.25(vh + 0.6)), 1) | ans = 1.5535
fzero(@(vh) ((vh -1.9 - 0.5* sqrt(0.6))^2 - 0.25(vh + 0.6)), 4) | ans = 3.2710

)]

VH = 5 0.75 + 0.5 VH + 0.6 0.6 VH = 3.61 V

fzero(@(vh) (5- 0.75 - 0.5* (sqrt(vh + 0.6) - sqrt(0.6)) - vh), 1) | ans = 3.6112

(a )

80x106 A = 100x106

W
A W
0.15
6.10
2
1.55 0.60
0.15 V =
2
2
1
V L S
L S

VTNL = 0.6 + 0.5 .15 + 0.6 0.6 = 0.646 V

W 0.551
2 2
100x106 A W
1
=
(2.5 0.15 0.646) V =
2
2
1
1.82
V L L
L L
W
A W
0.1
8.89
(b) 80x106 A = 100x106 2 1.55 0.60 0.1 V 2 =
2
1
V L S
L S
80x106 A =

VTNL = 0.6 + 0.5 .1+ 0.6 0.6 = 0.631 V

W 0.511
2 2
100x10 A W
1
2.5

0.1
0.631
V

=
(
)
2
2
1
1.96
V L L
L L
6

80x106 A =

Page 312
The high logic level is unchanged : VH = 2.11
W
A W
0.1
9.16
60x106 A = 50x106 2 2.11 0.75 0.1 V 2 =
2
1
V L S
L S

VTNL = 0.75 + 0.5 .1+ 0.6 0.6 = 0.781 V

60x106 A =

W 0.410
2 2
50x106 A W
1
=
(3.3 0.1 0.781) V =
2
2
1
2.44
V L L
L L

R. C. Jaeger and T. N. Blalock

08/12/10

Page 314
Using MATLAB :
fzero(@(vh) ((vh -1.9 - 0.5* sqrt(0.6))^2 - 0.25(vh + 0.6)), 1) | ans = 1.5535

= 0 VTN = 0.6V | VH = 2.5 - 0.6 = 1.9 V | I DD = 0 for vO = VH

2
VL
100x106 2
6 10
100x10 1.9 0.6 VL =
(2.5 VL 0.6)
2
2
1
1
10
0.235
6VL2 116.8VL + 3.61 = 0 VL = 0.235V | I DD = 100x106 1.9 0.6
0.235 = 278 A
2
1
2
100x106 2
Checking : I DD =
(2.5 0.235 0.6) = 277 A
2
1

Page 319
VTNL = 1.5 + 0.5 0.2 + 0.6 0.6 = 1.44V

W
W 1.17
0.2
60.6x106 = 100x106 3.3 0.6
0.2 =
2
1
L S
L S
W 0.585
2
100x106 W
1
60.6x106 =
=
(0 1.44) =
2
1
1.71
L L
L L

Page 320

2.22
0.2
I DS = 100x106
2.5 0.6
0.2 = 79.9 A which checks.
2
1

Page 321
The PMOS transistor is still saturated so I DL = 144 A, and VH = 2.5 V.
5
V
144x106 = 100x106 2.5 0.6 L VL VL = 0.158 V
2
1
Page 326

W 2.22
=
in parallel with transistors A and B.
L
1
W 1.81
The W/L ratio of the load transistor remains unchanged : =
1
L L

Place a third transistor with

R. C. Jaeger and T. N. Blalock

08/12/10

Page 327
Place a third transistor in series with transistors A and B.
W
2.22 6.66
The new W/L ratios of transistors A, B and C are
=3
=
.
1
1
L ABC
W 1.81
The W/L ratio of the load transistor remains unchanged : =
1
L L
Page 333

M L1 is saturated for all three voltages. I DD =

2
40x106 1.11

2.5 (0.6) = 80.1 A

2 1 L

The voltages can be estimated using the on - resistance method.

For the 11000 case, RonA =

132mV 64.4mV
64.4mV
= 844 RonB =
= 804
80.1A
80.1A

For the 00101 case, RonE =

64.4mV
= 804 .
80.1A

For the 01110 case, RonC =

203mV 132mV
132mV 64.4mV
= 886 RonD =
= 844
80.1A
80.1A

The voltage across a given conducting device is I D Ron . Small variations in Ron are ignored.

ABCDE

Y (mV)

2 (mV)

3 (mV)

IDD (uA)

ABCDE

Y (mV)

2 (mV)

3 (mV)

IDD (uA)

00000
00001
00010
00011
00100
00101
00110
00111
01000
01001
01010
01011
01100
01101
01110
01111

2.5 V
2.5 V
2.5 V
2.5 V
2.5 V
130
2.5 V
130
2.5 V
2.5 V
2.5 V
2.5 V
2.5 V
130
200
114

0
0
0
0
0
0
2.5 V
64
0
0
0
0
0
0
64
21

0
0
0
0
2.5 V
64
2.5 V
64
0
0
0
0
2.5 V
64
130
43

0
0
0
0
0
80.1
0
80.1
0
0
0
0
0
80.1
80.1
80.1

10000
10001
10010
10011
10100
10101
10110
10111
11000
11001
11010
11011
11100
11101
11110
11111

2.5 V
2.5 V
2.5 V
200
2.5 V
130
2.5 V
100
130
130
130
110
130
66
110
65

2.5 V
2.5 V
2.5 V
130
2.5 V
130
2.5 V
83
64
64
64
43
64
32
64
32

0
0
2.5 V
64
2.5 V
64
2.5 V
64
0
0
64
22
64
32
87
32

0
0
0
80.1
0
80.1
0
80.1
80.1
80.1
80.1
80.1
80.1
80.1
80.1
80.1

R. C. Jaeger and T. N. Blalock

08/12/10

Page 334
2.5V (80A)
Pav =
= 0.100 mW
2
Page 335
2

(
)
F (2.5V ) (3.2x10 Hz ) = 2x10

PD = 10-12 F (2.5V ) 32x106 Hz = 2x104W = 200 W or 0.200 mW

PD = 10-12

W = 0.02 W or 20 mW

Page 336
The inverter in Fig. 6.38(a) was designed for a power dissipation of 0.2 mW.
To reduce the power by a factor of two, we must reduce the W/L ratios by a factor of 2.
W 1 1
W
1
1 4.71 2.36
| =
=
=
=
1
L L 2 1.68 3.36
L S 2 1

4mW
, we must increase the W/L ratios by a factor of 20.
0.2mW
W
2.22 44.4
| = 20
=
1
L S
1

To increase the power by a factor of

W
1.81 36.2
= 20
=
1
L L
1

To reduce the power by a factor of three, we must reduce the W/L ratios by a factor of 3.
W 1 1.81 0.603
W
W
1
1 3.33 1.11
1 6.66 2.22
=
| =
|
=
=
=
=
=
1
1.66
1
1
L L 3 1
L A 3 1
L BCD 3 1

R. C. Jaeger and T. N. Blalock

08/12/10

Page 339
t r = 2.2RC = 2.2 28.8x103 2x1013 F = 12.7 ns

)(

)(

PLH = 0.69RC = 0.69 28.8x103 2x1013 F = 3.97 ns

t
VH + VL
vO (t ) = VF (VF VI ) exp
| vO ( PHL ) = VH 0.5
= 2.5 1.15 = 1.35 V
RC
2

1.35 = 0.2 (0.2 2.5) exp PHL PLH = RC ln 0.5 = 0.69RC
RC
vO (t1 ) = VH 0.1(VH + VL ) = 2.5 + 0.23 = 2.27 V
t
2.27 = 0.2 (0.2 2.5) exp 1 t1 = RC ln 0.9
RC
vO (t2 ) = VL + 0.1(VH + VL ) = 0.2 + 0.23 = 0.43 V
t
0.43 = 0.2 (0.2 2.5) exp 2 t2 = RC ln 0.1
RC
t f = t2 t1 = RC ln 0.1+ RC ln 0.9 = RC ln 9 = 2.2RC

Page 343
t f = 3.7 2.37x103 2.5x1013 F = 2.19 ns | PHL = 1.2 2.37x103 2.5x1013 F = 0.711 ns
tr

(
)(
)
= 2.2(28.8x10 )(2.5x10 F ) = 15.8 ns

P =

13

| PLH

)(
)
= 0.69(28.8x10 )(2.5x10 F ) = 4.97 ns
3

13

0.711 ns + 4.97 ns
= 2.84 ns
2

Page 346

T = 2N P 0 = 2(401) 109 s = 802 ns | f =

1
1
=
= 1.25 MHz
T 802ns

R. C. Jaeger and T. N. Blalock

08/12/10

Page 347
For our Psuedo NMOS inverter with VL = 0.2 V ,

PHL = 1.2RonS C = 1.2

Cox" WL
L2
= 1.2
W
n (VGS VTN )
nCox"
VGS VTN )
(
L

PHL

(250x10 m) (100cm m) = 0.606 ps

= 1.2
(500cm V s)(3.3 0.825)V
(250x10 m) (100cm m) = 2.63 ps
L
= 1.2R C = 1.2
= 1.2
0.4 (V V )
(125cm V s)(3.1 0.825)V
2

PLH

onL

P =

GS

TN

0.606 ps + 2.63 ps
= 1.62 ps
2

Page 349

The PMOS transistor is saturated for vO = VL.

Pav =

2.5V (1.71mA)
2

I DD =

2
40x106 23.7

2.5 (0.6) = 1.71 mA

2 1 L

2
1
= 2.14 mW | PD = 5x1012 F (2.5V 0.2V )
= 13.2 mW
2x109 s

20 pF 2ns
We must increase the power by a factor of

= 8,
5 pF 1ns
so the W/L ratios must also be increased by a factor of 8.
W
23.7 190
W
47.4 379
2
1
| = 8
| PD = 20x1012 F (2.5V 0.2V ) 9 = 106 mW
= 8
=
=
1
L L
1 1
L S
1
10 s

R. C. Jaeger and T. N. Blalock

08/12/10