Optical communications

Chapter 3.2
Pham Quang Thai
Pqthai.hcmut@gmail.com

Content
Semiconductor physics
Light emitting diode (LED)
Laser diode (LD)

LED: light emission from radiative recombination of

carriers injected in forward biased p-n junction
Video

LED wavelength and spectral width: depend on

the semiconductor band gap Eg

LED power-current characteristic

Internal quantum efficiency:
Rrr: radiative recombination rate
Rnr: non-radiative recombination rate
Rtot: total recombination rate
N: carrier injection rate
rr: radiative recombination lifetime
nr: non- radiative recombination lifetime

I hc 1.24int I
Pint (W ) = N ph E ph = int NE ph = int
e ( m)
Nph: photon generation rate h: Planck constant
Eph: energy of photon
c: speed of light
I: bias current
: wavelength
e: electron charge

LED power-current characteristic

External quantum efficiency: internal absorption and
internal total reflection
LED emits about 1-2% of its internal optical power

Epoxy lenses can increase ext by 2-3 times

LED power-current characteristic

Coupler efficiency

couple = NA2

In practice, about 1% of internal optical power is

coupled into fiber

Output power-current: linear across a small region!

LED modulation bandwidth

trise = t fall 2.2 c

LED modulation bandwidth: modulated signal

frequency where output power is reduced by 3dB
Rate equation:

dN
I N
=

dt ed c
c: carrier lifetime

Transfer function:
Output power:

PDC
P (m ) =
(1 + C ) 2

3dB modulation bandwidth

f3dB =

1
2 c
10

Modulation bandwidth example

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Examples for chapter 3.2

Some commercial LEDs
Problem 4-6:
A double-heterojunction InGaAsP LED emitting at
a peak wavelength of 1310nm has radiative and
nonradiative recombination times of 25 and 90 ns,
respectively. The drive current is 35 mA. Find the
internal quantum efficiency and internal power
level

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