2SC3679

Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor)

5(Pulse10)

800min

hFE

VCE=4V, IC=2A

10 to 30

19.90.3

IC

VEB=7V
IC=10mA

2.5

VCE(sat)

IC=2A, IB=0.4A

0.5max

PC

100(Tc=25C)

VBE(sat)

IC=2A, IB=0.4A

1.2max

Tj

150

fT

VCE=12V, IE=0.5A

6typ

MHz

55 to +150

COB

VCB=10V, f=1MHz

75typ

pF

5.450.1

RL
()

IC
(A)

VBB1
(V)

VBB2
(V)

IB1
(A)

IB2
(A)

ton
(s)

tstg
(s)

tf
(s)

250

125

10

0.3

1max

5max

1max

I B =100mA

55C (Case Temp)

25C (Case Temp)
e Temp)
125C (Cas
Ca
125C (

V C E (sat)
0
0.03 0.05

0.1

0.5

Collector-Emitter Voltage V C E (V)

10

t on t stg t f I C Characteristics (Typical)

25C

55C

10

t s tg
V C C 250V
I C :I B 1 :I B2
=2:0.3:1Const.

tf

0.5
t on
0.2
0.1

0.5

0.5

0.1

100

1000

P c T a Derating
100

500

Collector-Emitter Voltage V C E (V)

1000

Collector Curren t I C (A)

nk

100

si

0.01
50

50

at

Collector-Emitter Voltage V C E (V)

1000

he

500

Without Heatsink
Natural Cooling
L=3mH
IB2=1.0A
Duty:less than1%

ite

C)

0.1

fin

In

100

10

ith

=2

50

Time t(ms)

0.5

0.05

0.05

68

Without Heatsink
Natural Cooling

10

1.2

10
0

( Tc

1.0

M aximum Power Dissipa ti on P C (W)

10

DC

Collector Curren t I C ( A)

0.8

0m

1m

10

0.5

0.01
5

10

10

0.6

j-a t Characteristics

20

20

0.4

Reverse Bias Safe Operating Area

Safe Operating Area (Single Pulse)

10

0.2

Collector Current I C (A)

Collector Current I C (A)

0.1

Transient Thermal Resistance

t on t s t g t f ( s)

125C

Switching T im e

DC Cur rent Gain h F E

50

0.5

Base-Emittor Voltage V B E (V)

10

0.1

mp)

se

(V C E =4V)

0.05

Collector Current I C (A)

h FE I C Characteristics (Typical)

5
0.02

e Te

V B E (sat)

(Cas

200mA

125C

j - a ( C/ W)

Collector Current I C (A)

300mA

Collector Current I C (A)

400 mA

(V C E =4V)

Te
m p)
25
C
5 5 C

500mA

1.4

I C V BE Temperature Characteristics (Typical)

(I C /I B =5)
Collector-Emitter Saturation Voltage V CE(s a t) (V )
Base-Emitter Saturation Voltage V B E (s a t) (V )

Weight : Approx 6.0g

a. Type No.
b. Lot No.

V CE (sat),V BE (sat) I C Temperature Characteristics (Typical)

600mA

0.65 +0.2
-0.1

5.450.1
B

VCC
(V)

700mA

2
3
1.05 +0.2
-0.1

Typical Switching Characteristics (Common Emitter)

I C V CE Characteristics (Typical)

3.20.1

IB

Tstg

p)

V(BR)CEO

2.00.1

ase Tem

4.80.2

55C (C

100max

15.60.4
9.6

1.8

VEBO

5.00.2

IEBO

100max

VCEO

800

VCB=800V

Temp

ICBO

(Case

Unit

25C

900

2SC3679

2.0

VCBO

External Dimensions MT-100(TO3P)

(Ta=25C)

Conditions

Symbol

4.0

Unit

4.0max

Electrical Characteristics

(Ta=25C)

2SC3679

Symbol

20.0min

Absolute maximum ratings

Application : Switching Regulator and General Purpose

3.5
0

Without Heatsink
0

25

50

75

100

125

Ambient Temperature Ta(C)

150