Sputtering

Sputtering is a technology in which the material is released from the source at

much lower temperature than evaporation. The substrate is placed in a vacuum
chamber with the source material, named a target, and an inert gas (such as
argon) is introduced at low pressure. A gas plasma is struck using an RF power
source, causing the gas to become ionized. The ions are accelerated towards the
surface of the target, causing atoms of the source material to break off from the
target in vapor form and condense on all surfaces including the substrate. As for
evaporation, the basic principle of sputtering is the same for all sputtering
technologies. The differences typically relate to the manor in which the ion
bombardment of the target is realized.

Advantages offered by evaporation for PVD

1) high film deposition rates;
2) less substrate surface damage from impinging atoms as the film is being
formed, unlike sputtering that induces more damage because it involves highenergy particles; 3) excellent purity of the film because of the high vacuum
condition used by evaporation;
4) less tendency for unintentional substrate heating.

Disadvantages of using evaporation for PVD

1) more difficult control of film composition than sputtering;
2) absence of capability to do in situ cleaning of substrate surfaces, which is
possible in sputter deposition systems;
3) step coverage is more difficult to improve by evaporation than by sputtering;
4) x-ray damage caused by electron beam evaporation can occur.