SignsfortheQuantitiesintheThreshold

VoltageEquations

KeyPoints
Fornchannel
26

ln

2
Forpchannel
26
2

ln

SolutiontoAssignment
1. Whenthesemiconductorsurfaceisintrinsic
10
26
ln
0.409
1.5 10
2
7.28 10
11.64 10
112492.15 /

SolutiontoAssignment
b.Forstronginversion

2
4

1.03 10
1.64 10
158996.32 /

SolutiontoAssignment
2.

10
ln
1.5 10

26

0.349
0.161

2
17.26 10
4

3.005 10
4.81 10

SolutiontoAssignment
5 10 1. 6 10
17.26 10

0.046
0.197
2

0.161

0.046

0.279

1.17
2 .349

1.17

MetalOxideSemiconductor
FieldEffectTransistors
(MOSFET)

WhatisMOSFET
Metal(orpolysilicondopedheavilytoactlikeametal
Oxide(SiO2,insulator)
Semiconductor(Onecanselectivelychangethecarriertype
tontypeorptype)
FieldEffect(Deviceiscontrolledbyanelectricfieldas
opposedtocurrent)
Transistor(Threeterminaldeviceconstruction)

MOSFET
Thebasicconceptoffieldeffecttransistors(FETs)hasbeenknown
sincethe1930s;however,FETsdidnotfindpracticalapplicationsuntil
theearly1960s.
Sincethelate1970s,MOSFETshavebecomeverypopular;theyare
beingusedincreasinglyinintegratedcircuits.
AMOSFETdevicecanbemadesmall,anditoccupiesasmallsilicon
areainanICchip.MOSFETsarecurrentlyusedforverylargescale
integrated(VLSI)circuitssuchasmicroprocessorsandmemorychips.

MOSFETLayout

MOSFETConstruction

MOSFET

MOSFET
ThetwobasictypesofMOSFETsaredepletion andenhancement.
AcronymsforMOSFETs:
IGFET (InsulatedGateFieldEffectTransistor)
MISFET (MetalInsulatorSemiconductorGateFieldEffectTransistor)

Twocomplementarydevices:

IVCharacteristics

Observations:
TheMOSFETiscutoff (IDn =0)forgatesourcevoltagethatareless
thanthethresholdvoltage,VTH.Then+ sourceanddrainare
electricallyisolateduntilsufficientvoltageisappliedtothegateto
createanntypeinversionlayerorchannel betweenthem.
Thedraincurrentisnearlyindependentofthedrainsourcevoltage
onceVDS >VGS VTH.Inthisregionofoperation,calledsaturation,the
MOSFETbehaveslikeacurrentsource.
TheregionwhereIDn dependsonbothVGS andVDS istermedtriode
region.

SquareLawModel
GenericFormulaforDrainCurrent
2
and
Atsaturation
2

RegimesofOperation

RegimesofOperation

CurrentVoltageEquations
NChannelMOSFET
0
for

forVGS VTH andVDS <VGS VTH
1

PchannelMOSFET
0
for

forVGS VTH andVDS VGS VTH

forVGS VTH andVDS >VGS VTH
1

forVGS VTH andVDS VGS VTH

ChannelLengthModulation

ChannelLengthModulation
2

Example
DeterminethechannelmodulationvoltageVM.TheNMOS
parametersare:NA =2x1016 cm3,VIN =0.5V.L=10um,VGS =1.5V
andVDS =5V.

Solution
26

ln

2 11.7 8.85 10
1.6 10
2 10

2 10
0.367
1.5 10
1.5 0.5 1
5 1 4

0.367

0.0292
0.005838

171.29

0.367

0.2919

1
2

Example
ConsideranNchannelMOSFETthathasann+ polysilicongateandhas
thefollowingconstants.NA =5x1016 cm3,Qi =5x1010 qcm2,tox =300A,
un =500cm2/Vs,W=50umandL=5umandms =0.96.
Usesquarelawmodeltocalculatedraincurrentat
a. VG =2VandVD =1V
b. VG =3VandVD =4V

Example
DerivethecompletesmallsignalmodelforanNMOStransistorwithID
=100uA,VSB =1V,VDS =2V.Deviceparametersaref =0.3V,W=
10um,L=1um, =0.5V1/2,k=200uA/V2,=0.02V1,tox =100A,B =
0.6V,Csbo =Cdbo =10fF.Overlapcapacitancefromgatetodrainis1fF.
AssumeCgb =5fF.

Seatwork
DerivethecompletesmallsignalequivalentcircuitforanNMOS
transistorwhichhasparametersof:W=10um,L=1um,k=194
uA/V2, =0.024V1,tox =80A,f =0.3V,Vt0 =0.6V,NA =5x1015 cm3.
VGS =1V,VDS =2VandVSB=1V.Useb =0.7V,Csb0 =20fF,andCgb =
5fF.Overlapcapacitanceformgatetosourceandgatetodrainis2fF.