4/15/2016

EEE 201
Electronics I

Lecture 15
Prof. Md. Ziaur Rahman Khan
Dept. of EEE, BUET

Finite Output Resistance in Saturation

Large-signal equivalent circuit model of the n-channel MOSFET in
saturation

Large-signal equivalent circuit model of the n-channel MOSFET in

saturation, incorporating the output resistance ro.

Prof. Md. Ziaur Rahman Khan, Dept. of EEE, BUET

4/15/2016

MOSFET Circuits at DC

Prof. Md. Ziaur Rahman Khan, Dept. of EEE, BUET

MOSFET Circuits at DC
I D = kn

400 = 20

(V

gs

100
(Vgs Vt )2
2.10

Vt ) = 2

Vgs = 4

R=

10 Vds
ID

W
(Vgs Vt )2
2L

R=

Vds = 4

10 4
= 15k
.4mA

Design the circuit in Fig 2a to obtain a current ID of 0.4mA. Find the

values required for R and find the dc voltage VD. Let the NMOS
transistor have Vt=2V, nCox=20 A/V2, L= 10m and W=100m.
Neglect the channel length modulation effect.
Prof. Md. Ziaur Rahman Khan, Dept. of EEE, BUET

4/15/2016

MOSFET Circuits at DC
Let the Voltage VD in Figure is applied to the gate of another transistor Q2,
as shown in Fig 2b. Assume that Q1 and Q2 are identical MOSFET. Find
the drain current and voltage of Q2.
W
(Vgs 2 Vt )2
Vgs1 = 4V = Vds1 Vgs 2 = 4V I D = k n
2L
I D = 20

100
(4 2)2
2.10

I D = 0.4mA

VD 2 = 10 R2 I D 2
VD 2 = 6 V

Prof. Md. Ziaur Rahman Khan, Dept. of EEE, BUET

MOSFET Circuits at DC

Prof. Md. Ziaur Rahman Khan, Dept. of EEE, BUET

4/15/2016

MOSFET Circuits at DC

Prof. Md. Ziaur Rahman Khan, Dept. of EEE, BUET