1)Identify the Si (p or n type)?

In a pure silicon crystal, each Si atom has four valence electrons that can form Lewis octets with four other atoms. When an occasional
electron is shaken loose by thermal excitation or a crystalline defect, silicon becomes a weak conductor of electricity. Much more
important to the semiconductor industry are extrinsic semiconductors, in which the Si crystal is doped with impurity atoms, usually at
concentrations of several parts per million. For example, Si can be doped with P (or As or Sb) atoms, which have five valence
electrons. The fifth electron is not needed for bonding and becomes available as a current carrier. This is known as an n-type
semiconductor. If the Si is instead doped with B (or Ga or Al), which have only three valence electrons, this leaves an electron
vacancy or positive hole. Positive holes can likewise act as current carriers, to produce p-type semiconductors.

2)Sketch
the
energy
band
diagram
3)Indicate the position of energy level (label)

of

this

doped

Si

(identify

the

level

for

the

dopant).

4)The doped silicon will then be heated from room temperature to 500K.Sketch a graph of carrier concentration versus
temperature for the material. Identify in your sketch: partial ionization, extrinsic and intrinsic

5)How
Hall effect can be used
to identify the Si and measuring the carriers?