(7 0 ) E

2SB1587

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2438)

Unit

Conditions

2SB1587

Unit

160

ICBO

VCB=160V

100max

VCEO

150

IEBO

VEB=5V

100max

VEBO

V(BR)CEO

IC=30mA

150min

IC

hFE

VCE=4V, IC=6A

5000min

IB

VCE(sat)

IC=6A, IB=6mA

2.5max

PC

75(Tc=25C)

VBE(sat)

IC=6A, IB=6mA

3.0max

Tj

150

fT

VCE=12V, IE=1A

65typ

MHz

55 to +150

COB

VCB=10V, f=1MHz

160typ

pF

Tstg

3.0
3.3
1.75

IC
(A)

1.05 +0.2
-0.1
5.450.1

10

60

10

4.4

0.9typ

3.6typ

Weight : Approx 6.5g

a. Type No.
b. Lot No.

I C V BE Temperature Characteristics (Typical)

0
0.2

0.5 1

Collector-Emitter Voltage V C E (V)

10

h FE I C Temperature Characteristics (Typical)

(V C E =4V)

40,000

50000

10,000

5,000

Transient Thermal Resistance

Typ

D C Cur r ent Gai n h F E

25C
10000
30C
5000

1000
0.2

0.5

Collector Current I C (A)

0.2

100

200

nk

50

si

10

40

at

Collector-Emitter Voltage V C E (V)

he

60

ite

Without Heatsink
Natural Cooling
0.1

2000

fin

Collect or Cur ren t I C (A)

10
0m

0.05
2

500 1000

P c T a Derating

0.5

20

)
mp)

50 100
Time t(ms)

In

40

10

ith

60

0.5

Cut- off F req uency f T (M H Z )

10

Emitter Current I E (A)

80

10

Typ

e Te

0.5

20

80

Cas

Safe Operating Area (Single Pulse)

100

(V C E =12V)

0.1

Collector Current I C (A)

f T I E Characteristics (Typical)

0.05

j-a t Characteristics

Maximu m Power Dissi pation P C (W)

DC Cur rent Gain h FE

125C

0
0.02

Base-Emittor Voltage V B E (V)

(V C E =4V)

0.5

50 100 200

Base Current I B (mA)

h FE I C Characteristics (Typical)

2,000
0.2

p)

C (

4
Tem

6A
I C =4A

emp

I B =0.3mA
2

8A

se T

0.5m A

30

0.8m A

se

1 .0 mA

(Ca

Collector Current I C (A)

1. 3m A

(V C E =4V)

25C

1 .5 m A

125

1 .8 m

Collector Current I C (A)

j - a ( C/W)

m
2.0

(Ca

Collector-Emitter Saturation Voltage V C E (s a t) (V )

.5

10

mA

V CE ( sat ) I B Characteristics (Typical)

3.35

1.5

tf
(s)

tstg
(s)

0.7typ

I C V CE Characteristics (Typical)

ton
(s)

IB2
(mA)

0.65 +0.2
-0.1

5.450.1

1.5

IB1
(mA)

VBB2
(V)

VBB1
(V)

0.8

2.15

Typical Switching Characteristics (Common Emitter)

RL
()

3.45 0.2

3.30.2

a
b

hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)

VCC
(V)

5.50.2

5.5

15.60.2

23.00.3

Symbol

0.80.2

2SB1587

VCBO

Symbol

External Dimensions FM100(TO3PF)

(Ta=25C)

1.6

Electrical Characteristics

(Ta=25C)

Application : Audio, Series Regulator and General Purpose

9.50.2

Absolute maximum ratings

Equivalent circuit

16.2

Darlington

20

3.5
0

Without Heatsink
0

25

50

75

100

125

150

Ambient Temperature Ta(C)

49