UNIT 1

1. Draw the h-model of CE configuration at low frequency. Also state the parameters
with their typical values.
2.

Draw the -model of CE configuration at high frequency. Also state the parameters
with their typical values.

3. Derive the equation for transconductance (gm) of CE configuration at high

frequency assuming room temperature.
4. State the significance of hybrid- model.
5. Prove:

(a) rbe= hfe VT / |IC|

(b) rbb = hie - [hfe VT / |IC|] OR rbb = hie - rbe
(c) rbc = hfe VT / |IC| hre
(d) rce= [1/hoe] [1/hfe gbc]

6. Derive the expression foe CE short circuit current gain for high frequency model.
7. Define unity gain frequency. Also plot the frequency response curve showing unity gain
frequency.
8. Derive the expression for cut off frequency (f) for high frequency CE configuration.
9. State & prove the relation between fT & f.
10. State Millers theorem.
11. Derive the expression for current gain with resistive load in CE configuration with high
frequency.
12. Derive the expression for current gain including source resistance & load resistance in
CE configuration with high frequency.
13. Derive the expression for voltage gain including source resistance & load resistance in
CE configuration with high frequency.
14. Derive the expression for Voltage Gain Bandwidth Product for CE high frequency
model.
15. Derive the expression for Current Gain Bandwidth Product for CE high frequency
model.
16. Draw the high frequency model for CS configuration of MOSFET. Also state the
parameters with their typical values.

17. Derive the expression for current gain of CS configuration of MOSFET at high
frequency.
18. Give the expression for Voltage gain & Unity Gain frequency of high frequency
MOSFET.
19. What is the physical origin of two capacitors on hybrid- model.
20. How does gm vary with (a) IC (b) VCE(c) T?
21. Prove hfe = gm * rbe
22. Define (a) fT

(b) f

Numericals:
23. For CE configuration, IC = 1.3 mA, hfe = 50, Calculate gm & rbe at room temperature.
24. For CE configuration, IC = 1.5 mA, hfe = 60, Calculate gm & rbe at room temperature if
hie = 1.3mA.
25. For CE configuration, IC = 1.6 mA, hfe = 45, Calculate gm & rbe at 30C if hre = 2x10-14.
26. At IC = 1.5 mA, VCE = 10V, a certain transistor at high frequency has CC= 3 pF,
hfe=200, fT = 80MHz. Calculate gm, rbe, Ce & f