Simulation Models
 Temperature Compensated PSPICE and SABER
Electrical Models
 Spice and SABER Thermal Impedance Models
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
GATE
SOURCE
G
DRAIN
(FLANGE)
TO263
TO220
TO262
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 100oC, VGS = 10V)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
Operating and Storage Temperature
Ratings
200
20
Units
V
V
18
13
Figure 4
247
150
1.0
55 to 175
A
A
mJ
W
W/oC
oC
Thermal Characteristics
RJC
1.0
oC/W
RJA
62
oC/W
40
oC/W
RJA
1in2
Device
IRF640NS
IRF640NL
IRF640N
Package
TO263AB
TO262AA
TO220AB
Reel Size
330mm
Tube
Tube
Tape Width
24mm
N/A
N/A
Quantity
800 units
50
50
Rev. B
IRF640N/IRF640NS/IRF640NL
January 2002
IRF640N/IRF640NS/IRF640NL
Parameter
Test Conditions
Min
Typ
Max
Units
ID = 250A, VGS = 0V
200
25
250
VGS = 20V
100
nA
Off Characteristics
BVDSS
IDSS
IGSS
VDS = 160V
TC = 150o
On Characteristics
VGS(TH)
rDS(ON)
gfs
Forward Transconductance
0.102
0.15
6.8
2200
pF
Dynamic Characteristics
CISS
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1MHz
COSS
Output Capacitance
CRSS
Qg(TOT)
VGS = 0V to 20V
Qg(10)
Qg(TH)
Qgs
Qgd
Switching Characteristics
400
pF
120
pF
117
152
nC
64
83
nC
nC
nC
24
nC
(VGS = 10V)
tON
TurnOn Time
44
ns
td(ON)
10
ns
tr
Rise Time
19
ns
td(OFF)
23
ns
tf
Fall Time
5.5
ns
tOFF
TurnOff Time
46
ns
ISD = 11A
1.3
trr
251
ns
QRR
1394
nC
Notes:
1: Starting TJ = 25C, L = 4.2mH, IAS = 11A.
2: Pulse width 400s; duty cycle 2%.
Rev. B
1.2
20
1.0
ID, DRAIN CURRENT (A)
15
0.8
0.6
0.4
0.2
10
0
0
25
50
75
100
150
125
175
25
50
75
100
125
150
175
2
DUTY CYCLE  DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
THERMAL IMPEDANCE
ZJC, NORMALIZED
PDM
0.1
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZJC x RJC + TC
SINGLE PULSE
0.01
105
104
103
102
101
100
101
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
100
175  TC
I = I25
150
VGS = 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
105
104
103
102
101
100
101
Rev. B
IRF640N/IRF640NS/IRF640NL
Typical Characteristic
200
100
100
IAS, AVALANCHE CURRENT (A)
100s
1ms
10
10ms
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
10
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS  VDD)
If R 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS  VDD) +1]
0.1
1
1
10
100
300
0.001
0.01
0.1
40
PULSE DURATION = 80s
DUTY CYCLE = 0.5% MAX
VDD = 15V
VGS = 10V
VGS = 5V
30
ID, DRAIN CURRENT (A)
30
20
TJ = 55oC
TJ = 175oC
10
VGS =4.5V
20
10
PULSE DURATION = 80s
DUTY CYCLE = 0.5% MAX
TC = 25oC
TJ = 25oC
0
0
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
3.5
3.0
1.2
VGS = VDS, ID = 250A
2.5
NORMALIZED GATE
THRESHOLD VOLTAGE
10
STARTING TJ = 25oC
STARTING TJ = 150oC
2.0
1.5
1.0
1.0
0.8
0.5
VGS = 10V, ID = 22A
0.6
0
80
40
40
80
120
160
200
80
40
40
80
120
160
200
Rev. B
IRF640N/IRF640NS/IRF640NL
10000
1.3
1.2
C, CAPACITANCE (pF)
ID = 250A
1.1
1.0
0.9
1000
CRSS = CGD
0.8
80
40
40
80
160
120
10
200
0.1
1
10
VDS , DRAIN TO SOURCE VOLTAGE (V)
100 200
10
VGS , GATE TO SOURCE VOLTAGE (V)
VDD = 100V
8
4
WAVEFORMS IN
DESCENDING ORDER:
2
ID = 22A
ID = 5A
0
0
10
20
30
40
50
60
70
BVDSS
VDS
tP
VDS
L
IAS
VDD
VARY tP TO OBTAIN
REQUIRED PEAK IAS
RG
VDD

VGS
DUT
tP
0V
IAS
0
0.01
tAV
Rev. B
IRF640N/IRF640NS/IRF640NL
IRF640N/IRF640NS/IRF640NL
VDS
VDD
Qg(TOT)
RL
VDS
VGS = 20V
VGS
Qg(10)
VDD
VGS = 10V
VGS
VGS = 2V
DUT
0
Ig(REF)
Qg(TH)
Qgs
Qgd
Ig(REF)
0
VDS
tON
tOFF
td(ON)
td(OFF)
tr
RL
VDS
tf
90%
90%
VGS
VDD

10%
10%
DUT
90%
RGS
VGS
50%
50%
PULSE WIDTH
VGS
10%
Rev. B
( T JM T A )
P DM = Z JA
(EQ. 1)
80
RJA = 26.51+ 19.84/(0.262+Area)
60
RJA (oC/W)
40
20
0.1
10
19.84
( 0.262 + Area )
R JA = 26.51 + 
(EQ. 2)
Rev. B
IRF640N/IRF640NS/IRF640NL
IRF640N/IRF640NS/IRF640NL
CA 12 8 3.6e9
CB 15 14 3.5e9
CIN 6 8 2e9
LDRAIN
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
DPLCAP
10
5
51
EVTHRES
+ 19 8
+
LGATE
GATE
1
EVTEMP
RGATE +
18 22
9
20
11
+
21
17
EBREAK 18

16
DBODY
MWEAK
MMED
MSTRO
RLGATE
LSOURCE
CIN
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 83.5e3
RGATE 9 20 7.6e1
RLDRAIN 2 5 10
RLGATE 1 9 57.8
RLSOURCE 3 7 39.2
RSLC1 5 51 RSLCMOD 1e6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 10e3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
ESLC
50
RDRAIN
6
8
ESG
DBREAK
RSLC2
IT 8 17 1
S1A
S1B
S2A
S2B
RLDRAIN
RSLC1
51
EBREAK 11 7 17 18 225
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
LDRAIN 2 5 1e9
LGATE 1 9 5.78e9
LSOURCE 3 7 3.92e9
DRAIN
2
SOURCE
3
7
RSOURCE
RLSOURCE
S1A
12
S2A
13
8
S1B
CA
RBREAK
15
14
13
17
18
RVTEMP
S2B
13
CB
6
8
EGS
19
VBAT
5
8
EDS
IT
14
+
8
22
RVTHRES
6 12 13 8 S1AMOD
13 12 13 8 S1BMOD
6 15 14 13 S2AMOD
13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e6*38),2.5))}
.MODEL DBODYMOD D (IS = 1.2e12 RS = 5.5e3
XTI = 5.5 TRS1 = 1e5 TRS2 = 8e6 + CJO = 12.5e10 TT = 1e7 M = 0.42)
.MODEL DBREAKMOD D (RS = 2.5 TRS1 = 1e3 TRS2 = 8.9e6)
.MODEL DPLCAPMOD D (CJO = 2.5e9 IS = 1e30 N = 10 M = 0.9)
.MODEL MMEDMOD NMOS (VTO = 3.14 KP = 5 IS = 1e30 N = 10 TOX = 1 L = 1u W = 1u RG = 7.6e1)
.MODEL MSTROMOD NMOS (VTO = 3.68 KP = 100 IS = 1e30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 2.76 KP = 0.05 IS = 1e30 N = 10 TOX = 1 L = 1u W = 1u RG = 7.6 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 =1.52e3 TC2 = 2e7)
.MODEL RDRAINMOD RES (TC1 = 9.8e3 TC2 = 2.6e5)
.MODEL RSLCMOD RES (TC1 = 3e3 TC2 = 1e6)
.MODEL RSOURCEMOD RES (TC1 = 1e3 TC2 = 1e6)
.MODEL RVTHRESMOD RES (TC1 = 2.3e3 TC2 = 1.3e5)
.MODEL RVTEMPMOD RES (TC1 = 2.8e3 TC2 = 1.7e6)
.MODEL S1AMOD VSWITCH (RON = 1e5
.MODEL S1BMOD VSWITCH (RON = 1e5
.MODEL S2AMOD VSWITCH (RON = 1e5
.MODEL S2BMOD VSWITCH (RON = 1e5
ROFF = 0.1
ROFF = 0.1
ROFF = 0.1
ROFF = 0.1
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE SubCircuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
Rev. B
IRF640N/IRF640NS/IRF640NL
DRAIN
2
RLDRAIN
RSLC1
51
RSLC2
ISCL
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
l.ldrain n2 n5 = 1e9
l.lgate n1 n9 = 5.78e9
l.lsource n3 n7 = 3.92e9
RDRAIN
6
8
ESG
i.it n8 n17 = 1
EVTHRES
+ 19 8
+
LGATE
GATE
1
EVTEMP
RGATE + 18 22
9
20
21
11
16
MWEAK
6
MSTRO
CIN
S1A
S2A
res.rbreak n17 n18 = 1, tc1 = 1.52e3, tc2 = 2e7
12
15
14
13
res.rdrain n50 n16 = 83.5e3, tc1 = 9.8e3, tc2 = 2.6e5
13
8
res.rgate n9 n20 = 7.6e1
S1B
S2B
res.rldrain n2 n5 = 10
13
res.rlgate n1 n9 = 57.8
CB
CA
res.rlsource n3 n7 = 39.2
+ 14
+
res.rslc1 n5 n51 = 1e6, tc1 = 3e3, tc2 = 1e6
6
5
EGS
EDS
8
8
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 10e3, tc1 = 1e3, tc2 = 1e6
res.rvtemp n18 n19 = 1, tc1 = 2.8e3, tc2 = 1.7e6
res.rvthres n22 n8 = 1, tc1 = 2.3e3, tc2 = 1.3e5
DBODY
EBREAK
+
17
18
MMED
RLGATE
DBREAK
50
LSOURCE
7
SOURCE
3
RSOURCE
RLSOURCE
RBREAK
17
18
RVTEMP
19
IT
VBAT
+
8
22
RVTHRES
Rev. B
th
IRF640N/IRF640NS/IRF640NL
JUNCTION
CTHERM1 th 6 2.8e3
CTHERM2 6 5 4.6e3
CTHERM3 5 4 5.5e3
CTHERM4 4 3 9.2e3
CTHERM5 3 2 1.7e2
CTHERM6 2 tl 4.3e2
RTHERM1 th 6 5e4
RTHERM2 6 5 1.5e3
RTHERM3 5 4 2e2
RTHERM4 4 3 9e2
RTHERM5 3 2 1.9e1
RTHERM6 2 tl 2.9e1
RTHERM1
CTHERM1
CTHERM2
RTHERM2
CTHERM3
RTHERM3
IRF640N
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 2.8e3
ctherm.ctherm2 6 5 = 4.6e3
ctherm.ctherm3 5 4 = 5.5e3
ctherm.ctherm4 4 3 = 9.2e3
ctherm.ctherm5 3 2 = 1.7e2
ctherm.ctherm6 2 tl = 4.3e2
rtherm.rtherm1 th 6 = 5e4
rtherm.rtherm2 6 5 = 1.5e3
rtherm.rtherm3 5 4 = 2e2
rtherm.rtherm4 4 3 = 9e2
rtherm.rtherm5 3 2 = 1.9e1
rtherm.rtherm6 2 tl = 2.9e1
}
RTHERM4
CTHERM4
RTHERM5
CTHERM5
RTHERM6
CTHERM6
tl
CASE
Rev. B
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Rev. H4