Differences between BJT and FET

Transistors can be categorized according to their structure, and

two of the more commonly known transistor structures, are the
BJT and FET.
BJT, or Bipolar Junction Transistor, was the first kind to be
commercially mass-produced. BJTs conduct using both minority
and majority carriers, and its three terminals have corresponding
names the base, emitter, and collector. It basically consists of
two P-N junctions the base-collector and the base-emitter
junctions. A material called the base region, which is a thin
intervening semiconductor, separates these two junctions.
Bipolar Junction Transistors are extensively useful in amplifying
devices, because collector and emitter currents are effectively
controlled by the small current at the base. They are named as
such, because the current which is controlled, goes through two
types of semi-conductor materials the P and N. Current,
essentially, consists of both hole and electron flow, in separate
parts of the bipolar transistor.
BJTs basically function as regulators of currents. A small current
is regulating a larger current. However, for them to properly
operate as current regulators, the base currents and the collector
currents must be moving in the right directions.
FET, or Field-effect Transistor, also controls the current between
two points, but it uses a different method to the BJT. As the

name suggests, FETs function is dependent on the effects of

electric fields, and on the flow, or movement, of electrons in the
course of a particular type of semi-conductor material. FETs are
sometimes referred to as unipolar transistors, based on this fact.
FET uses either holes (P channel), or electrons (N channel), for
conduction, and it has three terminals source, drain, and gate
with the body connected to the source in most cases. In many
applications, FET is basically a voltage controlled device, due to
the factthat its output attributes are established by the field that
is dependent on the applied voltage.