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DATA SHEET
PMST3904
NPN switching transistor
Product data sheet
Supersedes data of 1999 Apr 22
2004 Jan 21
NXP Semiconductors
PMST3904
FEATURES
SYMBOL
PARAMETER
MAX.
UNIT
VCEO
collector-emitter voltage
40
IC
200
mA
APPLICATIONS
General amplification and switching.
PINNING
PIN
DESCRIPTION
NPN switching transistor in a SOT323 plastic package.
PNP complement: PMST3906.
DESCRIPTION
base
emitter
collector
MARKING
TYPE NUMBER
handbook, halfpage
MARKING CODE(1)
1A
PMST3904
Note
= t: Made in Malaysia.
= W: Made in China.
Top view
2
MAM062
ORDERING INFORMATION
PACKAGE
TYPE
NUMBER
NAME
PMST3904
2004 Jan 21
DESCRIPTION
plastic surface mounted package; 3 leads
VERSION
SOT323
NXP Semiconductors
PMST3904
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
60
VCEO
collector-emitter voltage
open base
40
VEBO
emitter-base voltage
open collector
IC
200
mA
ICM
200
mA
IBM
100
mA
Ptot
200
mW
Tstg
storage temperature
65
+150
Tj
junction temperature
150
Tamb
65
+150
Tamb 25 C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
CONDITIONS
note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Jan 21
VALUE
UNIT
625
K/W
NXP Semiconductors
PMST3904
CHARACTERISTICS
Tamb = 25 C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
IE = 0; VCB = 30 V
50
nA
IEBO
IC = 0; VEB = 6 V
50
nA
hFE
DC current gain
60
IC = 1 mA
80
IC = 10 mA
100
300
IC = 50 mA
60
IC = 100 mA
30
VCEsat
collector-emitter saturation
voltage
IC = 10 mA; IB = 1 mA
200
mV
IC = 50 mA; IB = 5 mA
300
mV
VBEsat
IC = 10 mA; IB = 1 mA
650
850
mV
IC = 50 mA; IB = 5 mA
950
mV
Cc
collector capacitance
IE = Ie = 0; VCB = 5 V; f = 1 MHz
pF
Ce
emitter capacitance
pF
fT
transition frequency
IC = 10 mA; VCE = 20 V;
f = 100 MHz
300
MHz
noise figure
IC = 100 A; VCE = 5 V; RS = 1 k;
f = 10 Hz to 15.7 kHz
dB
35
ns
delay time
tr
rise time
35
ns
ts
storage time
200
ns
tf
fall time
50
ns
Note
1. Pulse test: tp 300 s; 0.02.
2004 Jan 21
NXP Semiconductors
PMST3904
MGU822
MGU821
500
250
handbook, halfpage
handbook, halfpage
IC
(mA)
h FE
400
(1)
(2)
(3)
(4)
(5) (6)
(7)
200
(1)
300
150
(8)
(9)
(2)
200
100
(10)
(3)
100
50
0
10 1
10
102
I C (mA)
103
10
VCE (V)
Tamb = 25 C.
(1)
(2)
(3)
(4)
VCE = 1 V.
(1) Tamb = 150 C.
(2) Tamb = 25 C.
(3) Tamb = 55 C.
(5) IB = 3 mA.
(6) IB = 2.5 mA.
(7) IB = 2 mA.
(8) IB = 1.5 mA.
IB = 5 mA.
IB = 4.5 mA.
IB = 4 mA.
IB = 3.5 mA.
Fig.3
Fig.2 DC current gain; typical values.
(9) IB = 1 mA.
(10) IB = 0.5 mA.
MGU823
1200
MGU824
1200
handbook, halfpage
handbook, halfpage
VBEsat
VBE
(mV)
1000
(mV)
1000
(1)
(1)
800
800
(2)
600
(3)
(2)
600
(3)
400
400
200
10 1
10
102
I C (mA)
200
10 1
103
VCE = 1 V.
(1) Tamb = 55 C.
IC/IB = 10.
(1) Tamb = 55 C.
(2) Tamb = 25 C.
(3) Tamb = 150 C.
(2) Tamb = 25 C.
(3) Tamb = 150 C.
Fig.4
Fig.5
2004 Jan 21
10
102
I C (mA)
103
NXP Semiconductors
PMST3904
MGU825
103
handbook, halfpage
VCEsat
(mV)
(1)
(2)
(3)
102
10
10 1
10
102
I C (mA)
103
IC/IB = 10.
(1) Tamb = 150 C.
(2) Tamb = 25 C.
(3) Tamb = 55 C.
Fig.6
VBB
RB
VCC
RC
Vo
(probe)
oscilloscope
450
(probe)
450
R2
Vi
DUT
R1
MLB826
Vi = 5 V; T = 500 s; tp = 10 s; tr = tf 3 ns.
R1 = 56 ; R2 = 2.5 k; RB = 3.9 k; RC = 270 .
VBB = 1.9 V; VCC = 3 V.
Oscilloscope: input impedance Zi = 50 .
2004 Jan 21
oscilloscope
NXP Semiconductors
PMST3904
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT323
HE
v M A
3
Q
A1
c
2
e1
bp
Lp
w M B
detail X
2 mm
scale
A1
max
bp
e1
HE
Lp
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT323
2004 Jan 21
REFERENCES
IEC
JEDEC
JEITA
SC-70
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
NXP Semiconductors
PMST3904
PRODUCT
STATUS(2)
DEFINITION
Development
This document contains data from the objective specification for product
development.
Qualification
Production
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
R75/04/pp9