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Q 1. Determine the current I Q 5.

Which type of special-purpose diode is formed


by a junction between a layer of metal and a layer
of semiconductor?

A) A tunnel diode.B) A Schottky diode C) A zener


diode D) A varactor diode

A) 0.9A B) 0.965 mA C) 19.3mA d) 0.965A Q 6. Electrical conductivity of insulators is the


range _____________.
Q 2. Determine Vo
(a) 10-10 (Ω-mm)-1 (b) 10-10(Ω-cm)-1
(c) 10-10(Ω-m)-1 (d) 10-8(Ω-m)-1

Q 7. Fermi level for extrinsic semiconductor


depends on

(a) Donor element (b) Impurity concentration


(c) Temperature (d) All

Q 8. Which of the following statements is


incorrect?
A) 2.6V B) 0.5V C) 14.6V d) 9.65V A) Conduction with in pure semiconductors is termed
intrinsic conduction
B) The dominant charge carriers within a doped
Q 3. Determine Vo for the network with 10 V on
both inputs semiconductor are called majority charge carriers
C) At room temperatures, pure semiconductors make
excellent conductors
D) Doping pure semiconductor material with small
amounts of donar impurities produces an n-type
semiconductor

Q 9. Which of the following best describes a p-type


semiconductor?

A material with electrons in donor levels which may


be thermally promoted to the conduction band.
A) 0 V B) 10V C) 9.7V d) 9.3V
B A material with no band gap which conducts with
Q 4. For the circuit of Fig. FIND VL if the source little resistance.
voltage vS is 2V, The diode is ideal, and RL IS 100.
C A material with a sizeable band gap.

D A material with empty acceptor levels to which


electrons from the valence band may be thermally
promoted.

A) 0.909 V B) 1.818V C) 9.09V d) 18.18V


MCQ TIME 13 Min