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ELECTRONIC DEVICES AND

CIRCUITS - EE2203
QUESTUION BANK

UNIT I

PN DIODE AND ITS APPLICATIONS

1. How a PN junction can be formed?


2. List out the common diode applications?
3. Define avalanche and zener breakdown?
4. What are the current components of diode?
5. Draw and explain the VI characteristics of pn junction diode.
6. Define Peak Inverse voltage of a diode.
7. Differentiate between static and dynamic resistance of a diode.
8. Although zener diode is operated in the reverse breakdown
region, but it does not burn. Why?
9. Differentiate between avalanche and zener breakdown.
10. Discuss the operation of pn diode under forward and reverse
biasing.
11. Define forward recovery time and reverse recovery
Time ?
12. What are the basic elements of regulated power supply?
13. What is ripple factor?
14. What is a rectifier?
15. Define regulation of a rectifier?
16. Define efficiency of a rectifier?
17. What is a filter and state its types?
18. What is SMPS?
19. Define intrinsic stand –off ratio?
20. What is a regulator and state its types?
21. “Transistor is called current controlled device” Why?
22. Define drift current and diffusion current.
23. What is meant by Threshold or cut-in voltage? Vr? Give its
value for silicon and germanium.
24. Define dynamic resistance.
If bulk resistance is 4 Ω and forward current IF = 2.5 milliamps 25.
What is the ac resistance?
26. The leakage current in a certain diode is 25µ A at 25 degree
Celsius . Find the change in temperature required for a leakage
Current of 40µ A.
27. State law of junction.
28. Define Reverse saturation current.]
29. What is the principle of operation of LCD?
30. Discuss the relative advantages and disadvantages of
LEDs and LCDs.
31. What are optoelectronic device
Optoelectronic device are light operated (photoelectronic)
devices, light emitting device or devices that modify light
32. Write down the classification of optoelectronic device
a) Photoemissive b) Photoconductive or photovoltaic
33. Define luminescence
Light can be emitted by a solid when it is stimulated by the
source of incident energy. This phenomenon is called
luminescence
34. What are the types of luminescence?
a) Photoluminescence b) Electroluminescence
35 . Define photoluminescence
It is incident energy is in the form of photons, then it is called
photoluminescence
36. Define electroluminensence
If the radiation is produced by the application of an electric
field, it is termed as electroluminescence
37. Which colour of light is emitted by GaAs, Gp, GaAsp
GaAs - Infra red radiation (invisible) GaP - Red or Green
GaAsP - Red or Yellow
38. Define injection laser diode
When the emitted light is coherent, (ie) essentially
monochromatic, then such a diode is refered to as an injection
laser diode
39. What are the liminations of LCD?
* It requises an external or internal light source * Temperature
range is limited to about 60oC * Lime time is limited due to chemical
degeneration
40. What are the two types of LCDs?
a) Dynamic scattering type LCD b) Field effect LCD
41. Name the crystal materls used to LCD?
a) Nematic b) Cholesteric
42. What are the types of liquid crystal cells?
a) Transmittive type b) Reflective type
43. What re the advantages of LCD?
* They require less voltage * They are economical
* They have a low power consumption
44. What are the disadvantages of LCD?
* They are slow devices (ie) turn On & turn OFF time
are quite large
* They occupy large area * Their life span is quite small
45. What is the main difference between laser & LED?
Laser emits monochromatic or coherent light whereas LED
emits incoherent light
46. What are the disadvantages of using laser diode?
Because of high-energy density, a laser beam is quite
dangerous eye protection must be worn when working with
these devices
47. Define injection laser diode
Laser diode which operates in a pulsed manner are termed
injection laser diodes
48. Define continuous wave laser diode
Laser diode which produce a continuous output are refered as
continuous wave laser diode
49. Define dark current
In photodiode when no light is applied, there is a minimum
reverse leakage current called as dark current
50. Give some applications of photo diodes
They are used as demodulators, encoders, optical
communication system, high speed counting and switching
circuits, computer card punching etc.
51. What is photovoltaic effect?
If a PN junction is open circuited the energy is used to create a
potential difference which is proportionl to the incident light. This
phenomenon is clled pen[hotovoltaic effect

UNIT – II
BJT AND ITS APPLICATIONS
1. Define “punch through” in early effect.
2. Write short notes on heat sink.
3. Explain transistor as an amplifier.
4. Calculate the values of Icand Ie for a transistor with  =0.97 and
Icbo =10 A.I B is measured as 50A.
5. Sketch the h-parameter equivalent circuit for a CE transistor.
6. Explain how transistor is used as rectifier?
7. Why is transistor called a current controlled device ?
8. Why is collector region is greater than emitter region?
9. Explain about the depletion layers of the transistors.
10. Give the classification of power transistor based on
(i) Frequency of operation.
(j) Current capacity.
11. Give the relationship between Alpha and Beta.
12. Draw and explain input and output characteristics of CB
configuration.
13. How does early effect affect the BJT characteristics in CB
configuration?
14. What are the limitations of h parameters?
15. Define Transistor
Transistor consists of two junctions formed by sandwitching either
P-type or N-type semiconductor between a pair of opposite types.
16. Write the current amplification factor for a CB transistor.
a = Change in Collector Current at constant VCB / Change in
emitter current
17. Write the formula for input resistance in a CB transistor
Input resistance = Change in base - emitter voltage / Change in
emitter current at constant VCB
18. Write the current amplification factor for a CE transistor.
b = Change in Collector Current / Change in base current at
constant VCE
19 . Define transistor action.
A transistor consists of 2 coupled PN junctions. The base is a
common region to both junctions and makes a coupling
between them. Since the base regions are smaller, a significant
interaction between junctions will be available. This is called
transistor actions.
20. Define delay time
It is defined as the time required for the current to rise from 0 to
10% of its maximum value.
21. Define rise time
It is the time required for the current to rise from 0 to 90
percentage of the maximum value.
22. Define turn-on time
It is the time required for the current to rise from 0 to 90
percentage of the maximum value ton = td + tr
23.. Define fall time
It is the time required for the Collector current to fall from 90 to 10
percentage of Ics.
24. Define Storage time
It is the time required to fall from 100 to 90 percent of Ics.
25. Define turn-off time
It is the time required to fall from 100 to 90 percent of Ics.
Toff=ts+tr
26 . Define hybrid parameters.
Any linear circuit having input and output terminals can be
analysed by four parameters(one measured on ohm, one in mho
and two dimensionless) called hybrid or h-parameters.
27. What are the use of h - Parameters?
It perfectly isolates the input and output circuits. Its source and
load currents are taken into account.
28 . Define power transistors
Power transistors are those which handle a large amount of
current and also dissipates large amount of power across
collector base junction.
29 . Define current amplification factor in CC transistor.
g =Change in emitter current /Change in base current at
constant VCE
30. Which is the most commonly used transistor configuration?
Why?
The CE Configuration is most commonly used. The reasons are

* High Current gain * High voltage gain * High power gain

* Moderate input to output ratio.


31 What are the values of input resistance in CB, CE & CC
Configuration
CB - Low about 75 CE - Medium About 750 CC - Very high about
750
32. Write the voltage and current equation for hybrid parameters.
V1 = h11i1 + h12V2 i2 = h21i1 + h22V2
33. What are the values of h-parameters?
h11 = V1/ i1 ; h12 = V1 / v2 ; h21 = i2 / i1 ; h22 = i2 / v2
34. h – parameter is applied to linear circuit : True or False.
True
UNIT - III
FET AND ITS APPLICATIONS
1. Sketch and explain the basic structure of an N channel junction
field effect transistor.
2. What are the advantages and disadvantages of JFET over BJT?
3. Why is FET known as a unipolar device?
4. Draw and explain the small signal low frequency model of
JFET.
5. Draw and explain the transfer curve of MOSFET in
enhancement mode.
6. Distinguish between JFET and MOSFET.
7. How do you protect the MOSFET gate?
8. Describe the various FET parameters.
9. What is a channel?

It is a base like structure which determines the type of FET

10. What are the advantages of FET

* Input impedance is very high. This allow high degree of


isolation between the input & output Circuit.

*Current carriers are not crossing the junctions hence noise is


highly reduced.

* It has a negative temperature Co-efficient of resistance . This


avoids the thermal runaury .

* It has a smaller size, longer life high efficiency.

11.. What are the advantage of MOSFET compared to JFET?

The input impedance of MOSFET is higher than that of JFET

12. What are the two modes of MOSFET?

(a) Depletion mode (b) Enhancement mode


13. Why UJT is called so?

UJT has only one PN junction so it is called as uni junction


transistor

14.What are the advantages of SCR and TRIAC?


SCR performs rectification, inversion and regulation of power flow
TRIAC is a bidirectional switch and hence it can conduct in both
the direction.

15 Define breakdown voltage


The applied voltage at which the thyristors conducts heavily
without gate voltage.

16 .Define latching current

It is the minimum current required to latch the device from off to ON


state

17 .Define holding current


It is defined as the minimum current required to hold the device
into conduction.

18 .Define turn - on time


It is the time taken by the SCR to reach to its full conduction
from the time the trigger is applied.

19 .Define turn - off time


It is the finite time taken by the SCR after application of the
reverse voltage to switch the device off.
20 . What are the advantage of SCR?
Switching speed is high No moving parts. So it gives noiseless
operation at high frequency It controls large current in the load
by means of small gate current Occupies less space

21 . Give some applications of thysistor?


Used for power control Used for speed control of a d.c shunt
motor
22 . Define finger voltage
It is defined as the minimum voltage which is required between
anode and the cathode of thyristor to trigger into conduction

23. What is the name for solid state equivalent of thyristor


Thyratron.

24. .Define inter-base resistance


It is the resistnce offered by the silicon bar

25 . Define pinch-off voltage


It is the drain source voltge above which the drain current become
constant

26. . What are the differences between JFET & BJT


jFET BJT
1. Unipolar device 1. Bipolar device
2. High input impedance 2. Low input impedance due
to forward bias
3. Voltage driven device 3. Current driven device
4. Gain is characterised
by transconductance 4. Gain is chracterised by voltge gain
5. Low noise level 5. High noise level

27. . What is amplification factor


It is the product of drain resistnce and transconductance
m=Rd x gm Rd=Drain resistnce gm=Transconductance

28. Define drain resistance


It is the ratio of change in drain source voltage to change in
drain current at constant gate source voltage.

UNIT - IV
AMPLIFIERS AND OSCILLATORS

1. What is a single tuned amplifier?


2. What are the disadvantages of tuned amplifiers?
3. What are double tuned amplifiers?
4. What are the advantages of stagger tuned amplifier?
5 What is feed back?
6. What are feed back amplifiers?
7. What are the types of feed back?
8. What is negative feed back?
9. What is positive feedback?
10. Which feedback increases the gain of the amplifier?
11. State Barkhausen criterion.
12. Give the classification of oscillators.
13. Define feedback factor .
14. Draw the schematic representation of Hartley oscillator.
15. In Hartley oscillator calculate L2 if L1 = 15mh ,C=50pF
mutual inductance of 5µH and frequency of oscillations is 168 KHz.
16. Compare the frequency response characteristics of an amplifier with and
Without Feedback.
17.What is the condition for the sustained oscillation?
18. Draw the colpitt oscillator
19. Why is RC –phase shift oscillator is preferred for the generation of low
Frequency ? Derive the frequency of oscillation for the same.
20 Explain in detail
( i ) Voltage-shunt feedback amplifier
(ii ) current – series feedback amplifier
21. What are the conditions for sustained oscillator or what is Barkhausen
criterion?
22. State the frequency for RC phase shift oscillator.

UNIT - V
PULSE CIRCUITS
1. What do you understand by wave shaping circuits?
2. Which elements are used in linear and non-linear
wave shaping circuits?
3. Why there is need of wave shaping circuits?
4. What do you mean by differentiator circuits?
5. What do you mean by integrator circuits?
6. What do you mean by clipping circuits?
7. What do you mean by clamping circuits?
8 . What do you mean by positive clipper circuits?
9. What do you mean by negative clipper circuits?
10. hat do you mean by positive clamping circuits?
11. What do you mean by negative clamping
circuits?
12. Sketch the output waveforms from a
differentiating circuit
13. when the input is a saw-tooth wave.
14. Sketch the output waveforms from a
differentiating circuit
when the input is a square wave.
15. Mention the advantages of oscillator.
16 . With a neat diagram explain the action of phase
shift oscillator.
17.Explain the concept of multivibrator.

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