Beruflich Dokumente
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Transistor
Power BJT
Outline
• History
• Theory
• Transistor Types
• Characterstics of BJT
• BJT applications
• Power transistor and applications
• Summary
• References
Power BJT
History of the Transistor
P-N Junction
Russell Ohl 1939
First Transistor
Bell Labs 1947
Shockley, Brattain,
and Bardeen
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Replica of first Transistor
Bell Labs
December 23,1947
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The number of
transistors that can be
placed inexpensively on
an integrated circuit has
doubled approximately
every two years
Power BJT
Introduction
NPN BJT with forward-biased E–B junction and reverse-biased B–C junction
Power BJT
Power Transistors
• Generally
– Fabrication differences for dissipating more
heat
– Lower gain than signal transistors
• BJT
– essentially the same as a signal level BJT
• MOSFET
– base (fly back) diode
– Large current requirements:
use parallel MOSFETs
Power BJT
Power BJT
Transistor Switching Times
Power BJT
•1. Common Base Configuration - has Voltage Gain but no Current Gain.
•
•2. Common Emitter Configuration - has both Current and Voltage Gain.
•
3. Common Collector Configuration - has Current Gain but no Voltage Gain
Power BJT
Common-Emitter NPN Transistor
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Input Characteristics
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Output Characteristics
Plot IC as f(VCE, IB)
Cutoff region (off)
both BE and BC reverse
biased
Active region
BE Forward biased
BC Reverse biased
Saturation region (on)
both BE and BC forward
biased
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Transfer Characteristics
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Transistor Operating Point
VB VBE
IB
RB
VCE VCC
IC
RC RC
VCE VCC I C RC
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Operating Point
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Maximum ratings of Power Transistors
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BJT Vendors
•API Electronics Inc. {High Reliability BJT, QPL Power Transistor Manufacturer}
Power BJT
APPLICATIONS
Because power semiconductors have very wide-ranging applications, the most
desirable type for a given application comes down to several factors: the
amplification, the switching speed, and the power class. Trends in particular
types can be seen in applications in industry, the consumer market, and
transportation
A. Industrial Applications
Within industry, the two main uses for power semiconductors are for motor control
and power supplies. For motor drives, power semiconductors can control all
sizes of motors from those found in large mills to simple machine tools.
B. Consumer Applications
Power BJT
Application of the BJT Detector for Simple, Low-Cost, and
Low-Power Alpha-Particle detection Systems
Power BJT
In the recent past, a high-resistivity-silicon detector with internal signal amplification
based on the bipolar transistor (BJT) effect is developed. The operating principle
isanalogous to that of the phototransistor, widely employed for detecting light. With
the base left floating, the high-resistivity substrate (that acts as the collector region for
the BJT) can be depleted by a positive voltage applied between collector and
emitter terminals. The hole charge generated by an ionizing event is collected on the
base, then injected as a forward current toward the emitter, thus causing a much
larger electron current to flow between emitter and collector. The time integral of the
resulting emitter-current pulse amplifies the signal charge by a factor equal to the
current gain (βF) of the transistor. BJT detectors with peak βF up to 600 were in
particular fabricated, allowing for radiation detection with a very simple readout setup .
Owing to its intrinsic noise and speed limitations , the BJT detector can not be applied
when demanding resolution and counting-rate specifications are required, yet it is well
suited if simplicity and low cost of the readout electronics are the primary goals. In
order for its internal signal amplification capability to be fully exploited,the BJT must
generally be biased at a convenient quiescent current. This can either be done by
LED illumination or by base-current injection through a large-value polysilicon resistor
or an integrated pnp transistor acting as a current
source [6]. In any case, power consumption and system- or device-level complexity
increase.
Power BJT
RDFC Applications
This application note provides
key parametric requirements of
power BJTs suitable for resonant
Discontinuous Forward converter
(RDFC) applications. As the
main power switch, the BJT will
undergo different stresses in
RDFC compared to hard
switching opologies such as
flyback. Selecting the correct
BJT is vital to obtain optimal
power supply performance and
meet safety requirements. Typical RDFC Application Circuit
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Advantages
The key advantages that have allowed transistors to replace their
vacuum tube predecessors in most applications are
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Limitations
•Silicon transistors do not operate at voltages higher than about
1,000 volts (SiC devices can be operated as high as 3,000 volts). In
contrast, electron tubes have been developed that can be operated at
tens of thousands of volts.
Power BJT
Synthesis
• Application
– Switch for a digital signal: BJT or MOSFET
– Switch for a analog signal: JFET
– Switch for a power signal: Power MOSFET or BJT
– Current controlled-current amplifier: BJT
– Voltage controlled-current amplifier: JFET or
MOSFET
• Meet current & voltage requirements
• Speed: n-channel is faster than p-channel, npn is
faster thanpnp
Power BJT
References
Power BJT
Power BJT