SEME 2N4240

LAB
MECHANICAL DATA
Dimensions in mm NPN TRANSISTOR
MEDIUM POWER
HIGH VOLTAGE
6.35 (0.250)
3.68 8.64 (0.340)
(0.145) rad. 3.61 (0.142)
max. 3.86 (0.145)
rad. APPLICATIONS
0.71 (0.028)
0.86 (0.034)
24.33 (0.958)
24.43 (0.962)

11.94 (0.470)
12.70 (0.500)

Designed for switching regulator

14.48 (0.570)
14.99 (0.590)

applications where high frequency and

high voltage swings are required.

1.27 (0.050)
4.83 (0.190) 1.91 (0.750)
5.33 (0.210)
9.14 (0.360)
min.

TO66 Package.

ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated)

VCEO Collector – Emitter Voltage 300V
VCB Collector – Base Voltage 500V
VEB Emitter – Base Voltage 6V
IC Collector Current Continuous 2A
IC Peak (1) 5A
IB Base Current 1A
PD Total Power Dissipation 35W
Derate above 25 °C 0.2W / °C
TJ , Tstg Operating and Storage Junction Temperature Range -65 to 200 °C
RqJC Thermal Resistance , Junction To Case 5.0°C / W

NOTES:
(1) Pulse Test: Pulse Width = 5.0 ms , Duty Cycle £ 10%.

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Prelim. 8/93
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
2N4240
ELECTRICAL CHARACTERISTICS (Tcase = 25°C , unless otherwise stated)
OFF CHARACTERISTICS
Parameter Test Conditions Min. Typ. Max. Unit.
Collector – Emitter
VCEO(sus) IC = 200mA , IB = 0 300 V
Sustaining Voltage
ICEO Collector Cutoff Current VCE = 150V , IB = 0 5.0 mA
VCE = 450V , VBE(off) = 1.5V 2.0
ICEX Collector Cutoff Current mA
VCE = 450V , VBE(off) = 1.5V , TC =150°C 5.0
IEBO Emitter Cutoff Current VBE = 6V , IC = 0 0.5 mA

ON CHARACTERISTICS (1)
Parameter Test Conditions Min. Typ. Max. Unit.
IC = 0.1A , VCE = 10V 40
hFE Current Gain IC = 0.75A , VCE = 2V 10 100 —
IC = 0.75A , VCE = 10V 30 150
Collector – Emitter
VCE(sat) IC = 0.75A , IB = 75mA 1.0 V
Saturation Voltage
Base – Emitter
VBE(sat) IC = 0.75A , IB = 75mA 1.8 V
Saturation Voltage
Base – Emitter
VBE(on) IC = 0.1A , VCE = 10V 1.4 V
On Voltage
Second Breakdown
Is/b (VCC = 100V) 350 mA
Collector Current

DYNAMIC CHARACTERISTICS
Parameter Test Conditions Min. Typ. Max. Unit.
Current Gain – IC = 200mA , VCE = 10V
fT (2) 15 MHz
Bandwidth Product ftest = 5.0MHz
Cob Output Capacitance VCB = 10V , IE = 0 , f = 1.0MHz 120 pF

SWITCHING CHARACTERISTICS
Parameter Test Conditions Min. Typ. Max. Unit.
VCC = 200V , IC = 0.75A
tr Rise Time 0.5 m S
RL = 200W , IB1 = 100mA
VCC = 200V , IC = 0.75A
ts Storage Time 6.0 m S
IB1 = IB2 = 75mA
VCC = 200V , IC = 0.75A
tf Fall Time 3.0 m S
IB1 = IB2 = 75mA

NOTES:
(1) Pulse Test: Pulse Width = 300 ms , Duty Cycle £ 2%
(2) fT = |hfe| • ftest
FIGURE 1 – SWITCHING TIME TEST CIRCUIT

RB AND RC varied to obtain desired current levels.

D1 must be fast recovery type.
For td and tr , D1 is disconnected and V2 = 0.

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Prelim. 8/93
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk