Function of Transistors

CHAPTER 18

BJT TRANSISTORS
BJT-TRANSISTORS

BIPOLAR JUNCTION
Main Applications of Transistors TRANSISTORS (BJTs)
 BJT is constructed with three doped
semiconductor regions separated by two pn
junction
 There are three regions :
 Emitter
 Base
 Collector
 There are two type of BJT:
 npn
 pnp
 Basic const
construction
ction of BJT T i แบบ BJT
Transistor
 AC bias
 ป้อนสัญญาณไฟกระแสสลับ
 DC bias
bi
 ปปอนสญญาณไฟกระแสตรง
้ อนสัญญาณไฟกระแสตรง
 กระตุุ้นให้ BJTJ อยูู่ในช่ วงทํางานได้
 แม้ สัญญาณ input AC จะอยู่ในช่ วง ติดลบ
 ขา BE: Forward bias

Transistor
i DC Biasing
i i Transistor
i Operation
i
 The BE junction is forward-biased
 The BC junction is reverse-biased
(Vbase ( B ) > Vemitter ( E) ) (Vbase ( B ) < Vemitter ( E) ) eE  eB  eC

I E  I B  IC

(Vcollector ( C ) > Vbase ( B ) ) (Vcollector ( C ) < Vbase ( B ) )

 DC current gain
g
Alpha   and Bata   Transistor Voltages (DC bias)
 The collector current is equal to 
times
DC VC  VCC  I C RC  VE  VCC  I C RC
the
h emitter current
DC has VB  VBE  VE  VBE
IC DC IE as a value
a ue bet
between
0.950 and 0.995
ee
VBB  I B RB  VBE
 The collector current is equal to the base current VBB  VBE
IB 
multiplied by DC RB
2 Voltage Sources I C   DC I B
IC  DCIB DC has a value between
20 and
d 200 I C   DC I E  I E

Transistor Voltages (DC bias) Transistor Voltages (DC bias)

 R2 
Left : VB   VCC
Voltage
g divider Sources  1R  R2  Voltage divider Sources
Right : VB  VBE  I E RE
 Use only a single dc
source to provide  R2  
forward-reverse bias to  VCC   VBE
VB  VBE   R1  R2  
the ttransistor
ansisto IE  
RE RE
 Resistor R1 and R2 form VCE  VCC  I C RC  I E RE
a voltage divider that
provides the base bias I C   DC I E  I E
voltage VCE  VCC  I E ( RC  RE )
I B  I C /  DC
 Input Resistance at the Base Base Voltage RIN  RB   DC RE

Voltage divider Sources

 R2 || RIN 
VB   VCC
VB  R1  R2 || RIN 
RIN  RB 
IB RIN  R2
VB  VE  I E RE  R2 
VB   VCC
I E   DC I B  1
R  R V
2 
 DC I B RE VE  VB  0.7
RIN    DC RE
IB

THE BIPOLAR JUNCTION THE BIPOLAR JUNCTION

TRANSISTOR AS AN AMPLIFIER TRANSISTOR AS AN AMPLIFIER
 When both junction are forward-biased,
the transistor is in the saturation region of
its operation
 Wh VCE exceeds
When d 0.7
0 7 V,
V the
th base-
b
collector junction becomes reverse-biased
and the transistor goes into the active or
linear region
 When IB=0 the transistor is in the cutoff
region
Load Line Operation
Ope ation
Quiescent or Q-Point
Load Line: VCE vs IC
VCE  VCC  I C RC

VCC  VCE 1 V
IC    VCE  CC
RC RC RC

Active region : I C   DC I B

Saturation region : I C   DC I B

Signal
g a Operation
Op a o ono the Load
oad Line
Quiescent or Q-Point
 BJT
J Transistor BJT
J Transistor
AC Amplifier
p AC Amplifier:
p Class A
 Class A
 วงจรทํางานตลอดเวลา full cycle
y of AC input
p  ขยายสัญญ
ญญาณได้ 3 แบบ
signal (360o)  Common Base Amplifier (CB): Voltage Amp.
 Cl B
Class
 Common Emitter Amplifier (CE): Power Amp.
 วงจรทางาน
ํ half cycle หยุด half cycle (180o)  Common Collector Amplifier (CC): Current Amp.
 Class C
 วงจรทํางานน้ อยกว่ า half cycle (< 180o)
การวเคราะหการขยาย
Simple Model
สััญญาณ AC (i/p) (small signal analysis)

 ใช◌้ Equivalent Circuit มาเปนตวแทน

มาเป็ นตัวแทน
C E
BJT (AC model) C E  AC  AC
re' rc
 Simple model

B B
 Hybrid
Hy r Π model
o e
BJT ( npn type) Simple model
 h parameter
a a ete model
del
 Amplifier
p e Ga Gain
Simple Model Calculation Process
 Parameter in BJT equivalent circuit  Calculating DC bias
 AC ,  AC , r , rc e
'
 DC current and
d voltage
l in
i DC bias
bi circuit
i i
 AC   DC  Checking load line and Q-point
 AC ,  AC ถ้ าโจทย์ ไม่ ให้
ถาโจทยไมให
 AC   DC  Calculating AC amplifier gain
re' = Dynamic AC resistance ทขา
ทีข่ า E-B  re’ from IE(DC)
vout
VT 0.026  Voltage gain (AV) =
re'   vin
I E ( DC ) I E ( DC ) i
 Current gain (Ai) = out
iin
rc = Dynamic AC resistance ทีข่ า C-B
= ค่ าสู งมากระดับ MΩ ถ้ าโจทย์ ไม่ ให้ rc    Power gain (AP) = AV Ai

Common Base Amplifier

p
( CB Amp ) CB Amp. Circuit
C BJT E Vcc  R2 
Left : VB   VCC
 1
R  R2 
vin B vOUT

Right :  VB  VBE  I E RE  0
Common Base Amplifier
p
E C  R2  
 VCC   VBE
re'  ie rc VB  VBE   R1  R2  
IE  
RE RE
B
Simple model for AC small signal analysis
 Common Base Amplifier
p Common Emitter Amplifier
p
( CB Amp ) ( CE Amp )

vout ic Rc  AC ie Rc Rc B BJT C
AV     '
vin ie re' ie re' re
vin E vOUT
i i i i  i
Ai  out  c  c  ' c  ' AC' e
iin iin vin / rin ie re / rin ie re /(re // RE )
Common Emitter Amplifier
p
re' RE
 ( )
 AC (re' // RE ) AC
re'  RE R B C
    AC ( ' E )   AC  1  AC ib
re'
re'
re  RE  AC re' rc
iout  iin
E
AP  AV Ai  AV
Simple model for AC small signal analysis

Common Emitter Amplifier

p
CE Amp. Circuit without CE ( CE Amp: no CE )
Vcc
 R2  vout  ic Rc i R i R  Rc
Left : VB   VCC AV    ' c c  ' c c 
 1
R  R2 
vin ib (  re )  ie RE ic re  ie RE ic re  ic RE
'
RE
R1

Right :  VB  VBE  I E RE  0
iout vout / rout   vout  rin  r    Rc  rin 
R2 Ai         AV  in     
iin vin / rin  vin  rout   rout   RE  rout 
 R2  
 VCC   VBE
vb ib (  re' )  ie RE ib (  re' )  ic RE  ib re'   ib RE
V  VBE   R1  R2   rin  rb    
IE  B  ib ib ib ib
RE RE
rin   (re  RE )
'
rout  Rc //(rc  RE )  Rc
 Common Emitter Amplifier
p
( CE Amp: no CE ) CE Amp. Circuit with CE
Vcc
 R2 
Left : VB   VCC
  Rc  rin  R   AC (r  RE )   AC (r  RE )
' '
 R1  R2 
Ai       c  e
  e

 RE  rout   RE  Rc  RE

 AC (re'  RE )  AC RE Right :  VB  VBE  I E RE  0

    AC
RE Rc
 R2  
 VCC   VBE
VB  VBE   R1  R2  
  Rc  IE  
AP  AV Ai     AC RE RE
 RE 

Common Emitter Amplifier

p Common Emitter Amplifier
p
( CE Amp: with CE from E-GND ) ( CE Amp: with CE from E-GND )

vout  ic (rc // Rc )   AC ib (rc // Rc )  (rc // Rc )  Rc

AV      '
vin ib ( re' ) ib (  AC re' ) re' re   R   r ' 
Ai   ' c  AC e    AC
Higher voltage gain
 re  Rc 

iout vout / rout   vout  rin  r    R  r 

Ai         AV  in    ' c  in 
iin vin / rin  vin  rout   rout   re  rout  R 
AP  AV Ai   ' c (  AC )
vin  AC re'ib  re 
rin     AC re'
iin ib
routt  rc // Rc  Rc v 
gainDB  20 log10  out 
 vin 
 Common Collector Amplifier
p
( CC Amp ) CC Amp. Circuit
Vcc
B BJT E  R2 
Left : VB   VCC
vOUT  R1  R2 
vin C

Right :  VB  VBE  I E RE  0
Common Emitter Amplifier
p
B E  R2  
 AC re'  VCC   VBE
VB  VBE   R1  R2  
 AC ib rc IE  
RE RE
C
Simple model for AC small signal analysis

Common Collecter Amplifier

p Common Emitter Amplifier
p
( CC Amp) (CC Amp)

AV 
vout

ie RE
 'e E
iR R R
 ' E  E 1 rout  rc // RE  RE
vin ib ( re )  ie RE ie re  ie RE re  RE RE
'

 RB  AC RE 
 
 R //  AC RE   RB   AC RE    AC RB
Ai  1 B  
iout vout / rout  vout  rin  r  r   RE   RE  RB   AC RE
Ai        AV  in   1 in  



iin vin / rin  vin  rout   rout   rout 
vin v   i (  r ' )  ie RE 
rin   RB // rb  RB //  b   RB //  b AC e 
iin  ib   ib 
  R   AC RB
AP  AV Ai   ' c ( )
 ib (  AC re' )  ib (  AC RE ) 
 RB //    RB //(  AC RE )  e  B
r R   R
AC E
 ib 
 THE BJT AS A SWITCH
BJT PARAMETERS AND RATINGS

Conditions in cutoff Conditions in saturation

VCE ( cutoff )  VCC VCC IC sat 
I C ( sat )  I B (min)  IF the temperature
p g p  DC g
goes up, goes up,
p and
RC  DC
vice versa.

BJT PARAMETERS AND RATINGS

 Maximum Transistor Ratings

PD max 
IC  PD(max) = maximum power dissipation
VCE